The present application provides a display panel and a manufacturing method thereof. In the method for manufacturing a display panel according to the present application, a half-cutting protective strip is provided on the driving circuit functional layer in the half-cutting area, so that the heat will not be conducted to the driving circuit functional layer under the half-cutting protective strip during cutting the layer to be cut by the laser along the half-cutting line, thereby effectively avoiding damage to the driving circuit functional layer, and thus improving the production yield.

A field effect transistor having a channel that comprises three-dimensional graphene foam. The subject matter of the invention concerns a three dimensional field-effect transistor having a channel based on graphene foam and the use of ionic liquid as a gate. The graphene foam is made of a three-dimensional network of single and double layer graphene that extends in all the three dimensions. Metal contacts on either end of the graphene foam form the drain and source contacts of the transistor.

The invention provides a photoelectric conversion element including a photoelectric conversion film excellent in vapor deposition suitability and exhibiting excellent photoelectric conversion efficiency in a case where the photoelectric conversion film is a thin film, an optical sensor, an imaging element, and a compound. The photoelectric conversion element of the embodiment of the invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1). ##STR00001##

Disclosed herein is a transparent glass system that includes an optical grade silicon substrate, a transparent substrate layer; a titanium dioxide transparent layer, the transparent layer having an index of refraction of 2.35 or greater; and a polycrystalline diamond layer, wherein the transparent layer is between the substrate layer and the polycrystalline diamond layer.

A thin-film transistor and a manufacturing method thereof are provided, and the manufacturing method includes: forming a source electrode, a drain electrode and a planarization layer on a substrate, and patterning the planarization layer to form a first portion disposed between the source electrode and the drain electrode, a second portion disposed at a side of the source drain, and a third portion disposed at a side of the drain electrode. Upper surfaces of all the first portion, the second portion, and the third surface are flush with top portions of both the source electrode and the drain electrode.

A photovoltaic solar cell apparatus is described herein combining the advantages of several discoveries that address the previously unsolved problem of creating high conversion efficiency solar cells at a low cost. The solar cell designs and underlying principals disclosed herein may be applied in any type of photovoltaic solar power application, such as large scale photovoltaic solar plants, rooftop panels, solar powered electronic devices, and many others.

A thin film transistor and manufacturing method thereof, an electronic device are provided, which includes: a gate electrode, a gate insulation layer, an active layer, a first electrode and a second electrode are on a base substrate, the active layer made of a one-dimensional semiconductor nano material includes a first electrode region, a second electrode region, a first channel region, a second channel region; the first electrode region and the second electrode region are in contact with the first electrode and the second electrode respectively, the first channel region is directly connected with the first channel region and the second channel region respectively, the second channel region is a first doped region and between the first electrode region and the second electrode region; an energy level of the second channel region is different from that of the first channel region corresponding to the energy level of the second channel region.

Organic photovoltaics (OPVs) based on a slot-die coated ternary blends for low-intensity light harvesting are disclosed herein. The ternary blends comprise either a N-annulated perylene diimide-based electron acceptor material or an aalkyl-12,13-dihydro[1,2,5] thiadiazolo[3,4e]thieno[2″,3″:4′,5] thieno[2′,3′:4,5] pyrrolo[3,2-g] thieno [2′,3′:4,5]thieno [3,2-b]indole-2,10-diyl)bis(methanylylidene)) bis(3-oxo-2,3-dihydro1Hindene-2,1-diylidene))dimalononitrile) (BTP)-based electron acceptor material, a second acceptor material, and an electron donor material which comprises poly[(2,5-bis(2-hexyldecyloxy) phenylene)-alt-(5,6-difluoro-4,7-di(thiophen-2-yl)benzo[c] [1,2,5]thiadiazole)] (PPDT2FBT). In an aspect, a N-annulated perylene diimide dimer (tPDI.sub.2N-EH, PDI) acceptor material was incorporated into a blend of donor polymer material (PPDT2FBT) and fullerene acceptor [6,6]-phenyl-C.sub.61-butyric acid methyl ester (PC.sub.61BM) material to give ternary bulk heterojunction (BHJ) blends. In a further aspect, a BTP-based electron acceptor material was incorporated into a blend of donor polymer material (PPDT2FBT) and fullerene acceptor [6,6]-phenyl-C.sub.61-butyric acid methyl ester (PC.sub.61BM) material to give ternary bulk heterojunction (BHJ) blends.

A photoelectric conversion device includes a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer located between the first electrode and the second electrode and including a bulk heterojunction layer containing a donor organic compound and an acceptor organic compound. The donor organic compound includes a first substituent. The acceptor organic compound includes an aromatic portion and a second substituent binding to the aromatic portion and having dipole-dipole interaction with the first substituent.

The present disclosure provides a transistor acoustic sensor element and a method for manufacturing the same, an acoustic sensor and a portable device. The transistor acoustic sensor element comprises a gate, a gate insulating layer, a first electrode, an active layer and a second electrode arranged on a base substrate, wherein the active layer has a nanowire three-dimensional mesh structure and thus can vibrate under the action of sound signals, so that the output current of the transistor acoustic sensor element changes correspondingly. Since the active layer having the nanowire three-dimensional mesh structure can sensitively sense weak vibration of acoustic waves, the sensitivity to sound signals of the transistor acoustic sensor element is improved.