A memory cell includes a first conductive line, a lower electrode, a carbon nano-tube (CNT) layer, a middle electrode, a resistive layer, a top electrode and a second conductive line. The first conductive line is disposed over a substrate. The lower electrode is disposed over the first conductive line. The carbon nano-tube (CNT) layer is disposed over the lower electrode. The middle electrode is disposed over the carbon nano-tube layer, thereby the lower electrode, the carbon nano-tube (CNT) layer and the middle electrode constituting a nanotube memory part. The resistive layer is disposed over the middle electrode. The top electrode is disposed over the resistive layer, thereby the middle electrode, the resistive layer and the top electrode constituting a resistive memory part. The second conductive line is disposed over the top electrode.

A memory device includes a bottom electrode, an insulating layer, and a top electrode. The bottom electrode includes a plurality of carbon nanotubes. The insulating layer is disposed over the plurality of carbon nanotubes. The top electrode includes a graphene layer separated from the plurality of carbon nanotubes by the insulating layer.

A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX.sub.3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX.sub.3 and silicon layer are arranged between the first substrate and the glass substrate.

The present disclosure is drawn to displays for electronic devices. In one example, the display includes a light emitting layer with an organic light emitting element. A porous substrate can be attached to the light emitting layer, wherein the porous substrate is flexible and spreads heat generated by the light emitting layer. A cover layer can be attached to a surface of the porous substrate opposite the light emitting layer.

A photoelectric conversion element module (1) includes a plurality of photoelectric conversion elements (15) formed on a light-transmitting base plate (3). The photoelectric conversion elements (15) each include a transparent conductive film (4), a first charge transport layer (5), a power-generating layer (6), and a second charge transport layer (7) stacked in order from a side corresponding to the light-transmitting base plate (3). The second charge transport layer (7) is formed of a porous film that contains a carbon material. Among two of the photoelectric conversion elements (15) that are adjacent to each other, the second charge transport layer (7) of one photoelectric conversion element and the transparent conductive film (4) of the other photoelectric conversion element are electrically connected via a first conductive adhesive layer (9), a current-collecting electrode (11), and a second conductive adhesive layer (14).

Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

A variable resistance memory device including a stack including insulating sheets and conductive sheets, which are alternatingly stacked on a substrate, the stack including a vertical hole vertically penetrating therethrough, a bit line on the stack, a conductive pattern electrically connected to the bit line and vertically extending in the vertical hole, and a resistance varying layer between the conductive pattern and an inner side surface of the stack defining the vertical hole may be provided. The resistance varying layer may include a first carbon nanotube electrically connected to the conductive sheets, and a second carbon nanotube electrically connected to the conductive pattern.

The present disclosure provides an organic compound represented by general formula [1] below.

##STR00001##

In formula [1], Ar.sub.1 and Ar.sub.2 each represent an alkyl group having 1 to 8 carbon atoms, an aromatic hydrocarbon group having 6 to 18 carbon atoms, or a heteroaromatic group having 3 to 17 carbon atoms. Ar.sub.1 and Ar.sub.2 may be the same or different. Ar.sub.3 and Ar.sub.4 are each a substituent having a carbazolyl group. Ar.sub.3 and Ar.sub.4 may be the same or different. Ar.sub.1 to Ar.sub.4 may be substituted. At least one of Ar.sub.1 to Ar.sub.4 has a tert-butyl group. The total number of tert-butyl groups in one molecule of the organic compound is 2 or more.

[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed.

[Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

Provided is an ink composition capable of improving external quantum efficiency of a photoelectric conversion element. A method for producing an ink composition containing a p-type semiconductor material, an n-type semiconductor material, and a solvent, the method comprising: a step of preparing one or more compositions in which one or both of the p-type semiconductor material and the n-type semiconductor material are dissolved in the solvent; and a step of storing the composition for 4 days or longer to prepare the ink composition. The p-type semiconductor material contains a polymer compound having a donor-acceptor structure.