Patent classifications
H10K85/20
PHOTOELECTRIC CONVERSION ELEMENT, IMAGING ELEMENT, OPTICAL SENSOR, AND COMPOUND
The present invention is to provide a photoelectric conversion element with an excellent sensitivity, an imaging element, an optical sensor, and a compound. The photoelectric conversion element of the present invention includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film in which the photoelectric conversion film contains a compound represented by Formula (1) and a coloring agent.
##STR00001##
ONE-POT ORGANIC POLYMERIC SURFACE ACTIVATION AND NANOPARTICLE REDUCTION
Methods for attaching a reducible nanomaterial to an organic polymer are described herein. A method includes subjecting a reaction mixture that includes the reducible nanomaterial and the organic polymer to a reducing agent under reaction conditions sufficient to reduce the nanomaterial, activate the organic polymer, and attach the reduced nanomaterial to the organic polymer during the reaction.
PHOTODETECTOR ELEMENT, SENSOR AND BIOMETRIC AUTHENTICATION DEVICE INCLUDING SAME, COMPOSITION, AND INK
Provided is a photodetector having a small dark current ratio. A photodetector includes a first electrode, a second electrode, and an active layer provided between the first electrode and the second electrode, the active layer contains a p-type semiconductor material and an n-type semiconductor material, the p-type semiconductor material contains a polymer having the highest occupied molecular orbital (HOMO) of −5.45 eV or less, and the n-type semiconductor material contains a non-fullerene compound. It is preferable that the polymer contained in the p-type semiconductor material contains a constitutional unit DU having an electron donating property and a constitutional unit AU having an electron accepting property, and the non-fullerene compound contains a moiety DP having an electron donating property and a moiety AP having an electron accepting property.
HIGHLY EFFICIENT INVERTED POLYMER SOLAR CELLS USING AN INDIUM GALLIUM ZINC OXIDE INTERFACIAL LAYER
Organic polymer semiconductor-based polymer solar cells (PSCs) have attracted considerable research interest due to having excellent electrical, structural, optical, mechanical, and chemical properties. In the past 20 years, considerable efforts have been made to develop PSCs. Generally, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is used as a hole transport layer (HTL) of the PSC to enhance hole extraction efficiency, but highly acidic PEDOT:PSS destroys an indium tin oxide (ITO) electrode and an active layer and thus reduces the lifetime of the device. To avoid this problem, some attempts have been made to develop inverted PSCs having different electron transport layers (ETLs). However, such a device has limited power conversion efficiency (PCE) due to low electron mobility of the ETL. Therefore, attempts have been made to enhance the PCE of inverted PSCs using indium gallium zinc oxide (IGZO) having optimized indium (In), gallium (Ga), and zinc (Zn) contents. Accordingly, inverted PSCs that have ZnO or IGZO (having varying In:Ga:Zn molar ratios) as an ETL and have an ITO/ETL/PTB7:PC.sub.71BM/MoO.sub.3/Al structure have been constructed. The PCE of the inverted PSC can be increased from 6.22% to 8.72% using IGZO having an optimized weight ratio of In, Ga, and Zn.
Photoelectric conversion element and solid-state imaging device
A photoelectric conversion element of the present disclosure includes a first electrode, a second electrode disposed to be opposed to the first electrode, and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including at least one of a Chryseno[1,2-b:8,7-b′]dithiophene (ChDT1) derivative represented by the general formula (1) or a Chryseno[1,2-b:7,8-b′]dithiophene (ChDT2) derivative represented by the general formula (2).
FLEXIBLE DISPLAY DEVICE
The present disclosure relates to a flexible display device, and according to an aspect of the present disclosure, a flexible display device includes a display panel including a folding area and a non-folding area; a back plate which is disposed below the display panel and supports the display panel; and a bottom plate which is disposed below the back plate and includes a plurality of grooves so as to correspond to the folding area, and a plurality of nano helix structures disposed so as to correspond to the plurality of grooves. Therefore, the flexible display device forms a groove pattern in the bottom plate, and includes a nano helix structure in each of the plurality of grooves, to effectively relieve the folding stress and reduce the visibility of the pattern, finally an appearance quality may be improved.
POLARITON QUANTUM DOTS COMPRISING ULTRASHORT CARBON NANOTUBES
A nanotube polariton quantum dot photon source device includes a substrate. A nanotube is arranged on the substrate, and an incident light source is configured to generate an exciton-plasmon polariton excitation in the nanotube. The nanotube emits a photon in response to the generated exciton plasmon polariton excitation. The nanotube has a length L < 50 nm to emit one or more photons at a desired frequency.
Complementary conjugated polyelectrolyte complexes as electronic energy relays
The present invention generally relates to artificial photosystems and methods of their use, for example in artificial photosynthesis, wherein the artificial photosystems comprise one or more light-harvesting antenna (LHA) comprising a conjugated polyelectrolyte (CPE) complex (CPEC) comprising a donor CPE and an acceptor CPE, wherein the donor CPE and acceptor CPE are an electronic energy transfer (EET) donor/acceptor pair.
METHODS OF GRAPHENE GROWTH AND RELATED STRUCTURES
A method and structure for providing uniform, large-area graphene by way of a transfer-free, direct-growth process. In some embodiments, a SAM is used as a carbon source for direct graphene synthesis on a substrate. For example, a SAM is formed on an insulating surface, and a metal layer is formed over the SAM. The metal layer may serve as a catalytic metal, whereby the SAM is converted to graphene following an annealing process. The SAM is deposited using a VPD process (e.g., an ALD process and/or an MLD process). In some embodiments, a CNT having a controlled diameter may be formed on the surface of a nanorod by appropriately tuning the geometry of the nanorod. Additionally, in some embodiments, a curved graphene transistor may be formed over a curved oxide surface, thereby providing a band gap in a channel region of the graphene transistor.
Methods and systems of organic semiconducting polymers
An organic photovoltaic device comprising a polymer: ##STR00001##
and an acceptor. In this organic photovoltaic device, R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5 and R.sub.6 are independently selected from the group consisting of: a halogen, a substituted alkyl, an unsubstituted alkyl, a substituted aryl, an unsubstituted aryl, a substituted heteroaryl and an unsubstituted heteroaryl.