Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

Provided is a semiconductor element that can generate power with high efficiency and has high durability.

A multilayer junction photoelectric conversion element according to an embodiment includes: a first electrode; a first photoactive layer including a perovskite semiconductor; a first doped layer; a tunnel insulating film; a second photoactive layer containing silicon; and a second electrode, in this order. A thickness of the tunnel insulating film is 1 nm to 15 nm, and the first doped layer contains silicon and a trivalent or pentavalent element as an impurity. The element can be manufactured by a method including forming a bottom cell including a second active layer and then forming a first photoactive layer by coating.

The present disclosure relates to a composition that includes a perovskite having a surface, where the surface includes a pyridine compound. In some embodiments of the present disclosure, the pyridine compound may include an amine functional group. In some embodiments of the present disclosure, the pyridine compound may be selected from a group that includes N(2-methylpyridine)A, N(3-methylpyridine)A, N(4-(methyl)pyridine)A, N(3-(2-ethyl)pyridine)A, and N(4-(2-ethyl)pyridine)A, where A is a cation, and the pyridine compound has an ionic radius larger than 10 Å.

The present disclosure relates to a composition that includes a perovskite having a surface, where the surface includes a pyridine compound. In some embodiments of the present disclosure, the pyridine compound may include an amine functional group. In some embodiments of the present disclosure, the pyridine compound may be selected from a group that includes N(2-methylpyridine)A, N(3-methylpyridine)A, N(4-(methyl)pyridine)A, N(3-(2-ethyl)pyridine)A, and N(4-(2-ethyl)pyridine)A, where A is a cation, and the pyridine compound has an ionic radius larger than 10 Å.

A method for preparing a nickel oxide precursor ink comprising: preparing a solvent comprising diols and alcohol amines; adding nickel nitrate into the solvent to form a nickel nitrate containing solution; adding at least one metal acetate into the nickel nitrate containing solution to form a nickel nitrate and metal acetate containing solution; adding water to the nickel nitrate and metal acetate containing solution to form a nickel oxide precursor mixture; heating the nickel oxide precursor mixture to 60 to 75 Celsius; and cooling the nickel oxide precursor mixture to form the nickel oxide precursor ink.

An electron transport includes a metal co-doped zinc oxide compound having a formula Mn.sub.xCo.sub.0.015Zn.sub.1−xO, wherein x has a value in a range of 0.001 to 0.014. The electron transport material of the present disclosure may be used in a perovskite solar cell.

An electron transport includes a metal co-doped zinc oxide compound having a formula Mn.sub.xCo.sub.0.015Zn.sub.1−xO, wherein x has a value in a range of 0.001 to 0.014. The electron transport material of the present disclosure may be used in a perovskite solar cell.

A solar cell system and a flexible solar panel are disclosed herein. The solar cell system includes a glass housing, a set of rows of solar cells each defining a front side and a rear side and arranged within the glass housing. The solar cell system can also include a reflective element disposed in the glass housing and facing the rear side of the set of rows of solar cells and a first terminal coupled to a first end of the set of rows of solar cells, traversing through and sealed against the first end of the glass housing. The solar cell system can be configured with other solar cell systems into the flexible solar panel that is deployable in a wide range of potential applications.

The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed-halide perovskite of the formula (I) [A][B][X].sub.3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

This invention relates to a method for producing films of semiconducting material based on the organic-inorganic metal-halide compounds with perovskite-like structure, which can be used as a light-absorbing layer in solar cells, including thin-film, flexible and tandem solar cells, as well as can be applied for optoelectronic devices, in particular, light emitting diodes. The method is comprising the following steps: (a) applying a layer of a precursor, (b) applying a layer of composite reagent, and (c) treatment of the applied layers by the reagent X2 wherein the composite reagent applied in the step b) contains a mixture of AX and X2 reagents, and the film obtained after the step b) contains the seeds of the phase with a perovskite-like structure; the reagent AX is a salt comprising cation A+ and anion X−, and the anion X− is a singly charged anion; the reagent X2 is a molecular halogen.