The present invention relates to an optoelectronic device comprising: (a) a substrate comprising at least one first electrode, which at least one first electrode comprises a first electrode material, and at least one second electrode, which at least one second electrode comprises a second electrode material; and (b) a photoactive material disposed on the substrate, which photoactive material is in contact with the at least one first electrode and the at least one second electrode, wherein the substrate comprises: a layer of the first electrode material; and, disposed on the layer of the first electrode material, a layer of an insulating material, which layer of an insulating material partially covers the layer of the first electrode material; and, disposed on the layer of the insulating material, the second electrode material, and wherein the photoactive material comprises a crystalline compound, which crystalline compound comprises: one or more first cations selected from metal or metalloid cations; one or more second cations selected from Cs.sup.+′RB.sup.+, K.sup.+, NH.sup.4 + and organic cations; and one or more halide or chalcogenide anions. A substrate comprising a first and second electrode and processes are also described.

A photovoltaic device comprises a PIN structure in which a p-type hole transporting layer (2) is carried by a substrate (1) and a perovskite layer (3) and an n-type electron transporting layer (4) are arranged in sequence on the p-type layer. A light transmissive electrically conductive layer (9) is provided on top of the n-type electron transporting layer to form a light receiving top surface. Between the n-type electron transporting layer and the light transmissive conductive layer there is provided a structure comprising two inorganic electrically insulative layers (6, 8) having a layer of a conductive material (7) therebetween, wherein the two inorganic electrically insulative layers comprise a material having a band gap of greater than 4.5 eV and the layer of a conductive material comprises a material having a band gap of less than the band gap of the electrically insulative layers, wherein each electrically insulative layer forms a type-1 offset junction with the layer of conductive material.

The present invention provides: a light absorption layer for forming a photoelectric conversion element and an intermediate-band solar cell which have excellent two-step light absorption quantum yield; and a photoelectric conversion element and an intermediate-band solar cell having the light absorption layer. In addition, the present invention provides a method for manufacturing a light absorption layer that includes an intermediate-band and that has few voids. This light absorption layer: is configured so that quantum dots are scattered in the matrix of a bulk semiconductor having band gap energy of 2.0 to 3.0 eV; includes an intermediate-band; and has a void rate of no more than 10%.

Disclosed is an optoelectronic device including a first electrode and a second electrode facing each other, a hole transport layer and an light emitting layer disposed between the first electrode and the second electrode, wherein the hole transport layer includes a compound represented by Chemical Formula 1 or a polymer thereof and the light emitting layer includes a perovskite compound. ##STR00001##
Definitions of Chemical Formula 1 are the same as described in the detailed description.

Provided are a perovskite light emitting device containing an exciton buffer layer, and a method for manufacturing the same. A light emitting device of the present invention comprises: an exciton buffer layer in which a first electrode, a conductive layer disposed on the first electrode and comprising a conductive material, and a surface buffer layer containing fluorine-based material having lower surface energy than the conductive material are sequentially deposited; a light-emitting layer disposed on the exciton buffer layer and containing a perovskite light-emitter; and a second electrode disposed on the light-emitting layer. Accordingly, a perovskite is formed with a combined FCC and BSS crystal structure in a nanoparticle light-emitter. The present invention can also form a lamellar or layered structure in which an organic plane and an inorganic plane are alternatively deposited; and an exciton can be bound by the inorganic plane, thereby being capable of expressing high color purity.

A photoelectric conversion element includes a first layer, a second layer, and a third layer that are laminated in this order. The first layer is formed of a plurality of particles including an inorganic semiconductor as a main component, an aggregate of the particles, or a thin film including an inorganic semiconductor as a main component. The second layer is provided on a surface of each of the particles or the aggregate and is formed of a plurality of particles including a perovskite structure as a main component, an aggregate of the particles, or a thin film including a perovskite structure as a main component. The third layer is formed of a plurality of particles including an organic metal complex as a main component, an aggregate of the particles, or a thin film including an organic metal complex as a main component.

The present disclosure describes an organic-inorganic metal-halide-based semiconducting material that melts at lower temperatures compared to conventional inorganic semiconductors. The hybrid material is structurally engineered to easily access both crystalline and amorphous glassy states, with each state offering distinct physical properties.

The present invention relates to a double sided solar cell assembly, including at least one carbon-based perovskite solar cell unit, which has been included in a sandwich structure together with a second solar cell unit, which is a dye-sensitized photoelectrode.

A nanoparticle that includes a metal oxide core having the formula M.sub.2O.sub.5 wherein M is either tantalum (V) or niobium (V) and alkylsiloxane ligands surrounding the metal oxide core.

The present disclosure relates to a composition that includes a sequestering material capable of binding a target material, where the sequestering material includes a first component that includes at least one of a functional group, a molecule, an oligomer, or a polymer, and the target material includes at least one of an element, a chemical, and/or a compound. In some embodiments of the present disclosure, the element may include at least one element from at least one of Rows 4, 5, 6, and 7 of the Periodic Table and/or an inner transition metal.