A solar cell includes a first electrode, an intermediate layer, a photoelectric conversion layer, and a second electrode in this order. The intermediate layer contains at least one compound A selected from predefined compound group I and at least one compound B selected from predefined compound group II.

In accordance with a method of forming a halide perovskite thin film, a first halide perovskite material is chosen from which a halide perovskite thin film is to be formed. An epitaxial substrate formed from a second halide perovskite material is also chosen. The halide perovskite thin film is epitaxially formed on the substrate from the first halide perovskite material. The substrate is chosen such that the halide perovskite thin film formed on the substrate has a selected value of at least one property. The property is selected from the group including crystal structure stability, charge carrier mobility and band gap.

A method for manufacturing a photovoltaic device. The method comprises fabricating a first photovoltaic device portion with a first photoactive layer having a first face comprising a first perovskite precursor material; fabricating a second photovoltaic device portion with a second photoactive layer having a second face comprising a second perovskite material or a second perovskite precursor material; arranging the first photovoltaic device portion and the second photovoltaic device portion such that the first face is in contact with the second face; and compressing the first photovoltaic device portion and the second photovoltaic device portion at a pressure sufficient to fuse the first perovskite precursor material to the second perovskite material or the second perovskite precursor material.

A tandem photovoltaic device includes: a tunnel junction between an upper cell unit and a lower cell unit. The lower cell unit is a crystalline silicon cell. The tunnel junction includes: a carrier transport layer, a crystalline silicon layer, and an intermediate layer located between the carrier transport layer and the crystalline silicon layer. The carrier transport layer is a metal oxide layer. The intermediate layer includes a tunneling layer. The crystalline silicon layer has a doping concentration greater than or equal to 10.sup.17 cm.sup.−3. The carrier transport layer is in direct contact with a shadow surface of the upper cell unit. If the crystalline silicon layer is a p-type crystalline silicon layer, a first energy level is close to a second energy level. If the crystalline silicon layer is an n-type crystalline silicon layer, a third energy level is close to a fourth energy level.

A method includes forming a barrier layer on a substrate, removing a portion of the barrier layer to yield a patterned barrier layer and an exposed portion of the substrate within a hole in the patterned barrier layer, forming a first portion of a perovskite on the patterned barrier layer and a second portion of the perovskite on the exposed portion of the substrate, and removing the patterned barrier layer, thereby removing the first portion of the perovskite.

A method includes forming a barrier layer on a substrate, removing a portion of the barrier layer to yield a patterned barrier layer and an exposed portion of the substrate within a hole in the patterned barrier layer, forming a first portion of a perovskite on the patterned barrier layer and a second portion of the perovskite on the exposed portion of the substrate, and removing the patterned barrier layer, thereby removing the first portion of the perovskite.

The present disclosure relates to a composition that includes a perovskite phase having the stoichiometry ABX.sub.3 and a perovskite-like phase having the stoichiometry A′.sub.2A″B′.sub.2X′, where A is a first cation, B is a second cation, X is a first anion, A′ is a third cation, A″ is a fourth cation, B′ is a fifth cation, X′ is a second anion, and A′ is different than A″.

The present disclosure relates to a composition that includes a perovskite phase having the stoichiometry ABX.sub.3 and a perovskite-like phase having the stoichiometry A′.sub.2A″B′.sub.2X′, where A is a first cation, B is a second cation, X is a first anion, A′ is a third cation, A″ is a fourth cation, B′ is a fifth cation, X′ is a second anion, and A′ is different than A″.

The disclosure relates to the technical field of display, in particular to a luminescent film, a preparation method thereof, and an electroluminescent device. The luminescent film comprises: a crystallized blue-light perovskite material, and halogenated amine ligand materials grafted on the crystallized blue-light perovskite material, wherein the crystallized blue-light perovskite material comprises 3D perovskite nano-crystals; and the halogenated amine ligand materials comprise a first halogenated amine ligand material and a second halogenated amine ligand material, and the first halogenated amine ligand material is different from the second halogenated amine ligand material. The disclosure is suitable for manufacturing luminescent films and electroluminescent devices.

The disclosure relates to the technical field of display, in particular to a luminescent film, a preparation method thereof, and an electroluminescent device. The luminescent film comprises: a crystallized blue-light perovskite material, and halogenated amine ligand materials grafted on the crystallized blue-light perovskite material, wherein the crystallized blue-light perovskite material comprises 3D perovskite nano-crystals; and the halogenated amine ligand materials comprise a first halogenated amine ligand material and a second halogenated amine ligand material, and the first halogenated amine ligand material is different from the second halogenated amine ligand material. The disclosure is suitable for manufacturing luminescent films and electroluminescent devices.