Patent classifications
H10K85/50
A METHOD FOR PRODUCING A QUANTUM DOT
A method for producing a quantum dot including crystalline nanoparticle fluorescent material, wherein, using a first precursor solution and a second precursor solution containing different elements each other, the second precursor solution is sprayed as an aerosol on the heated first precursor solution, or both the first precursor solution and the second precursor solution are sprayed on a heated solvent as aerosols, and the first precursor solution and the second precursor solution are reacted with each other to synthesize a core particle containing the different elements. The method for producing quantum dots, can suppress the non-uniformity of the particle size of the quantum dots and accompany increase in the distribution of emission wavelengths in large scale synthesis.
A METHOD FOR PRODUCING A QUANTUM DOT
A method for producing a quantum dot including crystalline nanoparticle fluorescent material, wherein, using a first precursor solution and a second precursor solution containing different elements each other, the second precursor solution is sprayed as an aerosol on the heated first precursor solution, or both the first precursor solution and the second precursor solution are sprayed on a heated solvent as aerosols, and the first precursor solution and the second precursor solution are reacted with each other to synthesize a core particle containing the different elements. The method for producing quantum dots, can suppress the non-uniformity of the particle size of the quantum dots and accompany increase in the distribution of emission wavelengths in large scale synthesis.
CHARGE OR ELECTRICITY GENERATING DEVICES AND METHODS OF MAKING AND USE THEREOF
Disclosed herein are charge or electricity generating devices and methods of making and use thereof.
CHARGE OR ELECTRICITY GENERATING DEVICES AND METHODS OF MAKING AND USE THEREOF
Disclosed herein are charge or electricity generating devices and methods of making and use thereof.
DISPLAY DEVICE
A display device is provided, which includes a light sensor in a display panel. The display device comprises a substrate having a unit pixel area and a unit light sensor area, a first electrode over the substrate, a second electrode over the first electrode, a third electrode over the second electrode, a light emitting layer in the unit pixel area and disposed between the first electrode and the second electrode, and a light active layer disposed in the unit light sensor area and disposed between the second electrode and the third electrode.
DISPLAY DEVICE
A display device is provided, which includes a light sensor in a display panel. The display device comprises a substrate having a unit pixel area and a unit light sensor area, a first electrode over the substrate, a second electrode over the first electrode, a third electrode over the second electrode, a light emitting layer in the unit pixel area and disposed between the first electrode and the second electrode, and a light active layer disposed in the unit light sensor area and disposed between the second electrode and the third electrode.
THIN-FILM TRANSISTOR, DISPLAY APPARATUS INCLUDING THE SAME, AND METHOD OF PREPARING THE THIN-FILM TRANSISTOR
A thin-film transistor including: a gate electrode; a gate insulating layer that is in contact with the gate electrode; a semiconductor layer insulated from the gate electrode by the gate insulating layer; and a source electrode and a drain electrode that are in contact with the semiconductor layer, wherein the semiconductor layer includes a perovskite compound represented by Formula 1:
[A].sub.2[B][X].sub.6:Z Formula 1 wherein, in Formula 1, A includes a monovalent organic-cation, a monovalent inorganic-cation, or a combination thereof, B includes Sn.sup.4+, X includes a monovalent anion, and Z includes a metal cation or a metalloid cation.
THIN-FILM TRANSISTOR, DISPLAY APPARATUS INCLUDING THE SAME, AND METHOD OF PREPARING THE THIN-FILM TRANSISTOR
A thin-film transistor including: a gate electrode; a gate insulating layer that is in contact with the gate electrode; a semiconductor layer insulated from the gate electrode by the gate insulating layer; and a source electrode and a drain electrode that are in contact with the semiconductor layer, wherein the semiconductor layer includes a perovskite compound represented by Formula 1:
[A].sub.2[B][X].sub.6:Z Formula 1 wherein, in Formula 1, A includes a monovalent organic-cation, a monovalent inorganic-cation, or a combination thereof, B includes Sn.sup.4+, X includes a monovalent anion, and Z includes a metal cation or a metalloid cation.
COMPOSITION FOR FORMING HOLE TRANSPORT LAYER OF LIGHT-TRANSMITTING SOLAR CELL AND METHOD FOR MANUFACTURING LIGHT-TRANSMITTING SOLAR CELL
Disclosed are a composition for forming a hole transport layer of a light-transmitting solar cell, a method for manufacturing the light-transmitting solar cell, and a light-transmitting solar cell manufactured thereby. The light-transmitting solar cell manufactured with the composition for forming the hole transport layer may have excellent durability and therefore, not only deposit a transparent electrode, which is an upper electrode, without damage even without buffer layer, thereby reducing the process cost but also deposit the transparent electrode without damage by using a general sputter equipment even without using an expensive special sputter equipment.
COMPOSITION FOR FORMING HOLE TRANSPORT LAYER OF LIGHT-TRANSMITTING SOLAR CELL AND METHOD FOR MANUFACTURING LIGHT-TRANSMITTING SOLAR CELL
Disclosed are a composition for forming a hole transport layer of a light-transmitting solar cell, a method for manufacturing the light-transmitting solar cell, and a light-transmitting solar cell manufactured thereby. The light-transmitting solar cell manufactured with the composition for forming the hole transport layer may have excellent durability and therefore, not only deposit a transparent electrode, which is an upper electrode, without damage even without buffer layer, thereby reducing the process cost but also deposit the transparent electrode without damage by using a general sputter equipment even without using an expensive special sputter equipment.