The present invention relates to metal amides of general Formula Ia and for their use as hole injection layer (HIL) for an Organic light-emitting diode (OLED), and a method of manufacturing Organic light-emitting diode (OLED) comprising an hole injection layer containing a metal amide of general Formula Ia:

##STR00001##

An electronic apparatus and a method of manufacturing the same are provided. The electronic apparatus includes: a substrate; a light source on the substrate; a color conversion layer on the light source; a UV-absorbing layer on the color conversion layer; and a color filter on the UV-absorbing layer.

A light emitting device including a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode, wherein the emission layer includes a plurality of quantum dots and metal carboxylate having at least one hydrocarbon group of at least one carbon atoms, and the plurality of quantum dots includes a first organic ligand, and does not include cadmium and lead, and a method of manufacturing the same.

A material of a light emitting layer, a manufacturing method thereof, and an electroluminescent device are disclosed. The material of the light emitting layer includes a spiral nanotube structure and luminescent particles. The manufacturing method of the material of the light emitting layer includes steps of manufacturing the spiral nanotube structure and steps of manufacturing a guest-host structure. The manufacturing method is easily achieved, and a compatibility of the material is high.

Provided is an organic light-emitting device including: an anode; a cathode provided to face the anode; and organic material layers including a light emitting layer disposed between the anode and the cathode, wherein the light emitting layer, one or more layers of the organic material layers disposed between the anode and the light emitting layer, and one or more layers from among the organic material layers disposed between the cathode and the light emitting layer, each include one or more compounds each composed of sp3 carbon as a center, the light emitting layer includes a host including one or more anthracene-based compounds, and among organic materials included in the organic material layers, the bandgap energy (E.sub.bg) of each of the organic materials except for a dopant compound is 3 eV or more.

An organic electroluminescence device, comprising a cathode, an anode, and at least one emitting layer disposed between the cathode and the anode, wherein the emitting layer contains a first host material, a second host material, and a dopant material, wherein the first host material is a compound represented by the following formula (1), the second host material is a compound represented by the following formula (2), and one or more selected from the group consisting of the compound represented by the formula (1) and the compound represented by the formula (2) have at least one deuterium atom.

##STR00001##

A semiconductor nanocrystal-ligand composite that includes a semiconductor nanocrystal and a ligand layer including an organic ligand coordinated on the surface of the semiconductor nanocrystal, wherein the organic ligand includes a moiety having a conjugation structure, and a first functional group (X) and a second functional group (Y) linked to the moiety having a conjugation structure, wherein the first functional group (X) is bound to the surface of the semiconductor nanocrystal and the second functional group (Y) is present at an ortho position with respect to the first functional group (X).

A quantum dot material includes quantum dot particles and a first ligand bonded to a surface of the quantum dot particles. The first ligand is a metal-organic framework (MOF) monomer, and the MOF monomer includes at least three first active groups bonded to the quantum dot particles.

Provided is a light-emitting element with high external quantum efficiency and a low drive voltage. The light-emitting element includes a light-emitting layer which contains a phosphorescent compound and a material exhibiting thermally activated delayed fluorescence between a pair of electrodes, wherein a peak of a fluorescence spectrum and/or a peak of a phosphorescence spectrum of the material exhibiting thermally activated delayed fluorescence overlap(s) with a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound, and wherein the phosphorescent compound exhibits phosphorescence in the light-emitting layer by voltage application between the pair of electrodes.

A light-emitting element including a fluorescent material as a light-emitting material and having high emission efficiency is provided. The light-emitting element includes a pair of electrodes and an EL layer provided between the pair of electrodes. The EL layer includes a host material and a guest material. The host material is capable of exhibiting thermally activated delayed fluorescence at room temperature. The guest material is capable of exhibiting fluorescence. The second triplet excitation energy level of the guest material is higher than or equal to the lowest singlet excitation energy level of the guest material.