A display panel, a manufacturing method, and a display device are provided, which includes following steps: providing a substrate; forming a signal terminal located in the non-display region on the substrate; forming a light-emitting layer located in the display region on the substrate; adopting a mask plate to sequentially form an electron layer and a cathode layer on a side of the light-emitting layer away from the substrate, wherein the electron layer at least covers the display region, and the cathode layer covers the electron layer and extends to the non-display region to connect to the signal terminal.

An oxamide ultraviolet absorber-doped perovskite active layer, including a perovskite film and an oxamide ultraviolet absorber doped therein, where the oxamide ultraviolet absorber is N-(2-ethoxyphenyl)-N-(2-ethylphenyl) oxamide, and a perovskite structure is represented by ABX.sub.3. A perovskite solar cell, including a conductive substrate layer, a lower interfacial transport layer, the perovskite active layer, an upper interfacial transport layer and a metal electrode arranged sequentially from bottom to top. Methods for preparing the perovskite active layer and the perovskite solar cell are also provided.

A display panel includes: an anode; a sacrificial pattern disposed on the anode and provided with a sacrificial opening to expose a portion of an upper surface of the anode; a pixel definition layer covering at least a portion of the sacrificial pattern and provided with a light emitting opening overlapping the sacrificial opening; a barrier wall disposed on the pixel definition layer and provided with a barrier wall opening overlapping the light emitting opening; a light emitting pattern disposed in the barrier wall opening, and a cathode being in contact with the barrier wall. The sacrificial pattern includes a metal oxide including tin, indium, and zinc, a tin content relative to a total content of tin, indium, and zinc contained in the sacrificial pattern is equal to or greater than about 18 at % and equal to or smaller than about 23 at %.

A method for manufacturing a semiconductor device having an organic semiconductor material is provided. The method includes performing a large-area solution shearing step to form a monolayer (1L) or bi-layer (2L) C.sub.10-DNTT crystals with low shearing speed and forming Au electrodes by thermal evaporation on a wafer. The large-area solution shearing step is performed at a temperature in a range between about 60 C. and about 65 C. and with a shearing speed in a range between about 2 m/sand about 3 m/s. The 1L or 2L crystals have single-crystalline domains extending over several millimeters. An organic field-effect transistor (OFET) comprising an active layer that comprises a monolayer (1L) or bi-layer (2L) C.sub.10-DNTT crystals formed according to the method is also provided.

An organic optoelectronic device comprises an anode, an emitting layer positioned over the anode, and a multi-layer cathode positioned over the emitting layer, the multi-layer cathode comprising a first metal layer positioned over the emitting layer, an organic layer positioned over the first metal layer, and a second metal layer positioned over the organic layer.

A display device includes first to third anode electrodes on a pixel circuit layer and apart from each other, a first resonance auxiliary structure on the second anode electrode and having a first thickness, a second resonance auxiliary structure on the third anode electrode and having a second thickness, a first sub-anode electrode on the first anode electrode and in contact with the first anode electrode, a second sub-anode electrode on the second anode electrode to cover the first resonance auxiliary structure and in contact with the second anode electrode, a third sub-anode electrode on the third anode electrode to cover the second resonance auxiliary structure and in contact with the third anode electrode, a cathode electrode on the first to third anode electrodes, and an emission stack layer between the cathode electrode and the first to third sub-anode electrodes and including first to third emission layers sequentially stacked therein.

An organic light-emitting diode (OLED) display panel and an OLED display device are provided. In the OLED display panel, a thickness of an electronic layer is set to be less than a first default value, and/or a material mobility of at least one of the electronic layer or a common electrode layer is set to be greater than a second default value. The electronic layer and the common electrode layer can be formed by one metal mask, so a manufacturing efficiency of the OLED display panel can be improved, and a cost can be reduced, and meanwhile, the common electrode layer and metal terminals can be normally conducted to each other, allowing the OLED display panel to work normally.

A solar cell includes a first layer including a silica material, a second layer including an indium tin oxide material, and a third layer including a chlorophyll-doped poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS@Chl) material. The solar cell further includes a fourth layer including a silver material, and a fifth layer including a silica material. The PEDOT:PSS@Chl material includes chlorophyll in an amount of 4 to 12 percent by weight (wt. %) based on a total weight of the PEDOT:PSS@Chl material. The PEDOT:PSS@Chl material has a surface area of 500 to 550 meter square per gram (m.sup.2/g). The third layer has a thickness of 30 to 70 nanometer (nm).

A manufacturing method of a display device includes forming a lower electrode, forming an insulating layer overlapping the lower electrode, forming a first aluminum layer above the insulating layer, cooling the first aluminum layer, forming a second aluminum layer on the first aluminum layer, forming a thin film above the second aluminum layer, forming a partition including a lower portion and an upper portion, forming an organic layer located on the lower electrode, and forming an upper electrode which is located on the organic layer and is in contact with the lower portion of the partition.

Photovoltaic devices, and methods of making the same, are described. The photovoltaic devices includes a hole-transport layer which includes poly(9-vinylcarbazole) (PVK).