A thermoelectric module according to one embodiment of the present invention comprises: a first metal substrate; a thermoelectric element; and a second metal substrate, wherein the thermoelectric element comprises a first resin layer, a plurality of first electrodes, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs, a plurality of second electrodes and a second resin layer, wherein the width of the first metal substrate is greater than the width of the second metal substrate, and the first metal substrate comprises a first surface in direct contact with the first resin layer and a second surface opposite to the first surface, and further comprises: a first support spaced apart from the thermoelectric element and a side surface of the second metal substrate on the first surface of the first metal substrate, and arranged so as to surround the thermoelectric element and the side surface of the second metal substrate; and a sealing material spaced apart from the thermoelectric element and the side surface of the second metal substrate, on the first surface of the first metal substrate, and arranged so as to surround the thermoelectric element and the side surface of the second metal substrate.

A thermoelectric module according to one embodiment of the present invention comprises: a first metal substrate; a thermoelectric element; and a second metal substrate, wherein the thermoelectric element comprises a first resin layer, a plurality of first electrodes, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs, a plurality of second electrodes and a second resin layer, wherein the width of the first metal substrate is greater than the width of the second metal substrate, and the first metal substrate comprises a first surface in direct contact with the first resin layer and a second surface opposite to the first surface, and further comprises: a first support spaced apart from the thermoelectric element and a side surface of the second metal substrate on the first surface of the first metal substrate, and arranged so as to surround the thermoelectric element and the side surface of the second metal substrate; and a sealing material spaced apart from the thermoelectric element and the side surface of the second metal substrate, on the first surface of the first metal substrate, and arranged so as to surround the thermoelectric element and the side surface of the second metal substrate.

A power generation element includes a first crystal region including Al.sub.x1Ga.sub.1-x1N (0<x1≤1), and a second crystal region including a first element and Al.sub.x2Ga.sub.1-x2N (0≤x2<x1). The first element includes at least one selected from the group consisting of Si, Ge, Te, and Sn. The first crystal region includes a first surface and a second surface. The second surface is between the second crystal region and the first surface. The second crystal region includes a third surface and a fourth surface. The third surface is between the fourth surface and the first crystal region. An orientation from the fourth surface toward the third surface is along a <0001> direction of the second crystal region. An orientation from the second surface toward the first surface is along a <000-1> direction of the first crystal region.

A power generation element includes a first crystal region including Al.sub.x1Ga.sub.1-x1N (0<x1≤1), and a second crystal region including a first element and Al.sub.x2Ga.sub.1-x2N (0≤x2<x1). The first element includes at least one selected from the group consisting of Si, Ge, Te, and Sn. The first crystal region includes a first surface and a second surface. The second surface is between the second crystal region and the first surface. The second crystal region includes a third surface and a fourth surface. The third surface is between the fourth surface and the first crystal region. An orientation from the fourth surface toward the third surface is along a <0001> direction of the second crystal region. An orientation from the second surface toward the first surface is along a <000-1> direction of the first crystal region.

A heat pump that includes a thermoelectric device(s) and a heat sink having a raised portion with a top surface for thermally coupling with a planar face of the thermoelectric device(s). The raised portion of the heat sink includes an outer periphery and a raised central region surrounded by a void region to provide more uniform thermal conductivity when clamped within an assembly. The raised central region is shaped in an any shape corresponding to a shape of uneven thermal conductivity due to clamping pressure applied to the heat sink. The void region can be substantially contiguous and entirely circumscribe the central raised region. The device can optionally include discrete supports formed of a less thermally-conductive material within the void region. The supports can be elastomeric, such as O-rings, and disposed within pockets defined within the void region.

A heat pump that includes a thermoelectric device(s) and a heat sink having a raised portion with a top surface for thermally coupling with a planar face of the thermoelectric device(s). The raised portion of the heat sink includes an outer periphery and a raised central region surrounded by a void region to provide more uniform thermal conductivity when clamped within an assembly. The raised central region is shaped in an any shape corresponding to a shape of uneven thermal conductivity due to clamping pressure applied to the heat sink. The void region can be substantially contiguous and entirely circumscribe the central raised region. The device can optionally include discrete supports formed of a less thermally-conductive material within the void region. The supports can be elastomeric, such as O-rings, and disposed within pockets defined within the void region.

A method is presented for enabling heat dissipation in resistive random access memory (RRAM) devices. The method includes forming a first thermal conducting layer over a bottom electrode, depositing a metal oxide liner over the first thermal conducting layer, forming a second thermal conducting layer over the metal oxide liner, recessing the second thermal conducting layer to expose the first thermal conducting layer, and forming a top electrode in direct contact with the first and second thermal conducting layers.

The present invention relates to a feedback device and a method of providing thermal feedback using the same. A method for calibration of an intensity of a thermal feedback of a feedback device may comprise: outputting the thermal feedback in order from a weak intensity to a strong intensity among a plurality of intensities of the thermal feedback; obtaining a first user input; setting an intensity of the thermal feedback outputted at the time of the obtaining the first user input to a lowest intensity of the thermal feedback; obtaining a second user input; setting an intensity of the thermal feedback outputted at the time of the obtaining the second user input to a highest intensity of the thermal feedback; setting at least one intermediate intensity; and outputting the thermal feedback by using the lowest intensity, the highest intensity and the at least one intermediate intensity.

A method (100) for producing a temperature sensor (200), the method (100) comprising: providing (101) a cable (103), wherein electrical conductor portions (105) are protruding from an end of the cable (103); connecting (107) at least one temperature sensor element (109) to the electrical conductor portions (105) protruding from the cable (103); providing (111) a sensor capsule (113); connecting (115) a proximal end surface of the sensor capsule (113) to the end of the cable (103), so that the sensor capsule (113) surrounds the at least one temperature sensor element (109); providing (117) at least one drain opening (119) in the sensor capsule (113) near a connection area (121) of the cable (103) and the sensor capsule (113); filling (123) up a volume (125) of the sensor capsule (113) with a thermally conducting ceramic filler (127); connecting (129) an end cap (131) to a distal end surface (133) of the sensor capsule (113); sealing (135) the drain opening (119).

A method (100) for producing a temperature sensor (200), the method (100) comprising: providing (101) a cable (103), wherein electrical conductor portions (105) are protruding from an end of the cable (103); connecting (107) at least one temperature sensor element (109) to the electrical conductor portions (105) protruding from the cable (103); providing (111) a sensor capsule (113); connecting (115) a proximal end surface of the sensor capsule (113) to the end of the cable (103), so that the sensor capsule (113) surrounds the at least one temperature sensor element (109); providing (117) at least one drain opening (119) in the sensor capsule (113) near a connection area (121) of the cable (103) and the sensor capsule (113); filling (123) up a volume (125) of the sensor capsule (113) with a thermally conducting ceramic filler (127); connecting (129) an end cap (131) to a distal end surface (133) of the sensor capsule (113); sealing (135) the drain opening (119).