An electrocaloric effect element includes a container having a first wall and a second wall, the second wall facing the first wall, ionic liquid accommodated in the container, a first electrode provided at an outer surface of the first wall, and a movable electrode provided in the ionic liquid such that the movable electrode is movable in the ionic liquid.

An electrocaloric effect element includes a container having a first wall and a second wall, the second wall facing the first wall, ionic liquid accommodated in the container, a first electrode provided at an outer surface of the first wall, and a movable electrode provided in the ionic liquid such that the movable electrode is movable in the ionic liquid.

The present invention belongs to the technical field of energy conversion devices, which provides an rGO-PEI/PVDF pyroelectric thin film, and the method for preparing the film, as well as a self-energized bracelet produced based on such film, which utilizes the reduced graphite oxide after modified by polyethyleneimine (PEI) (rGO-PEI) as photothermal conversion material, and the silver-plated polarized polyvinylidene fluoride (PVDF) film as pyroelectric conversion material. The rGO-PEI photothermal material is fixed to the surface of the PVDF through a transparent film, and prepare the self-energized bracelet based on it. The obtained bracelet has an output power of up to 21.3 mW/m2, and does not require additional mechanical devices to control the temperature during operation, wherein, the thermoelectric conversion, rectification, storage and application are realized through temperature fluctuation produced by absorbing sunlight during doing outdoor sports, utilizing temperature difference of air flow, and sweeping gesture, etc.

A semiconductor structure may be located over a substrate, and may include a parallel connection of a first component and a second component. The first component includes a series connection of a diode and a capacitor that is selected from a metal-ferroelectric-metal capacitor and a metal-antiferroelectric-metal capacitor. The second component includes a battery structure. The semiconductor structure may be used as a combination of an energy harvesting device and an energy storage structure that utilizes heat from adjacent semiconductor devices or from other heat sources.

A semiconductor structure may be located over a substrate, and may include a parallel connection of a first component and a second component. The first component includes a series connection of a diode and a capacitor that is selected from a metal-ferroelectric-metal capacitor and a metal-antiferroelectric-metal capacitor. The second component includes a battery structure. The semiconductor structure may be used as a combination of an energy harvesting device and an energy storage structure that utilizes heat from adjacent semiconductor devices or from other heat sources.

One object of the present invention is to provide a bolometer having low resistance.

The present invention relates to a bolometer including two electrodes and a bolometer film lying between the two electrodes to connect the two electrodes, wherein the bolometer film includes semiconducting carbon nanotubes in a proportion of 90% by mass or more to the total amount of carbon nanotubes and includes p-type semiconducting carbon nanotubes, and one or both of the two electrodes include(s) a monometal or alloy having lower work function than the p-type semiconducting carbon nanotubes at least in a part of the electrode.

A method of making an electrocaloric element includes forming conductive layers on opposing surfaces of a film comprising an electrocaloric material to form an electrocaloric element, wherein the forming of the conductive layers includes one or more of: vapor deposition of the conductive layers under reduced pressure for a duration of time, wherein the duration of time under reduced pressure is less than 240 minutes; vapor deposition of the conductive layers under reduced pressure for a duration of time, wherein the duration of time of exposure to conductive material deposition is less than 240 minutes; vapor deposition of the conductive layers under reduced pressure, wherein the reduced pressure is 10.sup.−8 torr to 500 torr; or maintaining the film at a temperature of less than or equal to 200° C. during forming of the conductive layers.

A process for manufacturing a detection device having at least one thermal detector covered by a mineral sacrificial layer, at least one getter portion covered by a carbon-based sacrificial layer, and a thin encapsulation layer surrounding the thermal detector and the getter portion includes a making a through-opening extending through the mineral sacrificial layer and opening on the substrate. The carbon-based sacrificial layer is deposited so as to cover the getter portion located in the through-opening and to entirely fill the through-opening.

Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

A method and device which can receive and identify electromagnetic radiation in the terahertz (THz) frequency range. The device has a combination of material and geometric parameters that are unique and tunable, enabling resonating frequencies for spectral selectivity in the THz range (0.1-15) with ultra-narrow channel widths (0.01-0.10 THz) full width at half maximum (FWHM). Dependent upon configuration, the device may be employed as a large area resonator to collect weak or diffuse signals or as a constituent of an array able to take pictures within the spectrum for which they are sensitive.