Disclosed is a processing method for performing a processing corresponding to a processing gas in a plurality of processing containers which are connected to a gas supply source, and at least some of which have different lengths of pipes to the gas supply source. The processing method includes simultaneously supplying the processing gas from the gas supply source to the plurality of processing containers, and individually supplying the processing gas from the gas supply source to the plurality of processing containers or to some of the plurality of processing containers.

System for storing and using energy quantum mechanically includes an electronic device that produces heat while operating. A quantum heat engine can be in thermal contact with and electrically connected to the electronic device. The heat produced by the electronic device can dissipate to the quantum heat engine. The quantum heat engine can induce a current to bias the electronic device. Methods for storing and using memory resource to convert heat into electrical work, coherence capacitors, methods for quantum energy storage, and quantum heat engines, are also disclosed.

Thermal pattern sensor including a matrix of multiple rows and columns of pixels, each pixel comprising: - a pyroelectric capacitor comprising a pyroelectric portion positioned between lower and upper electrodes, in which a first of these electrodes forms a readout electrode; and a heating element that is capable of heating the pyroelectric portion of said pixel; and in which: - for each row of pixels, the heating elements are capable of heating the pyroelectric portion of the pixels of the row independently of the heating elements of the pixels of the other rows; and for each column of pixels, the readout electrodes of each pixel are electrically linked to one another and are formed by a first electrically conductive portion that makes contact with the pyroelectric portions of the pixels of the column, and that is separate from the first portions of the other columns.

A device for guiding charge carriers and uses of the device are proposed, wherein the charge carriers are guided by means of a magnetic field along a curved or angled main path in a two-dimensional electron gas, in a thin superconducting layer or in a modification of carbon with a hexagonal crystal structure, so that a different presence density is produced at electrical connections.

A method for producing an at least partially transparent device is provided, including producing, on a first substrate, first and second separation layers one against the other; producing, on the second separation layer, an at least partially transparent functional layer; making the functional layer integral with a second at least partially transparent substrate; forming a mechanical separation at an interface between the separation layers; removing the second separation layer; producing a first at least partially transparent electrode layer on the functional layer; where the materials of the stack are chosen such that the interface between the separation layers corresponds to that, among all the interfaces of the stack, having the lowest adherence force.

An infrared detection element includes a pyroelectric body, first and second light receiving electrodes, and blackened films. The first light receiving electrode is provided on a surface of the pyroelectric body and receives infrared light from a first region. The second light receiving electrode is provided on a surface of the pyroelectric body and receives infrared light from a second region. The blackened films are provided on a surface of the first light receiving electrode and are not provided on a surface of the light second receiving electrode. Thus, infrared reception sensitivity is different between the first light receiving electrode and the second light receiving electrode.

An apparatus for generating electrical energy comprises an oscillating heat pipe for transferring heat between a heat source and a heat sink, and a pyroelectric generator for generating electricity from thermal fluctuations generated by the oscillating heat pipe as the oscillating heat pipe transfers heat between the heat source and the heat sink.

A wafer-level integrated thermal detector comprises a first wafer and a second wafer (W1, W2) bonded together. The first wafer (W1) includes a dielectric or semiconducting substrate (100), a dielectric sacrificial layer (102) deposited on the substrate, a support layer (104) deposited on the sacrificial layer or the substrate, a suspended active element (108) provided within an opening (106) in the support layer, a first vacuum-sealed cavity (110) and a second vacuum-sealed cavity (106) on opposite sides of the suspended active element. The first vacuum-sealed cavity (110) extends into the sacrificial layer (102) at the location of the suspended active element (108). The second vacuum-sealed cavity (106) comprises the opening of the support layer (104) closed by the bonded second wafer. The thermal detector further comprises front optics (120) for entrance of radiation from outside into one of the first and second vacuum-sealed cavities, aback reflector (112) arranged to reflect radiation back into the other one of the first and second vacuum-sealed cavities, and electrical connections (114) for connecting the suspended active element to a readout circuit (118).

A thermoelectric conversion element 10 includes an anomalous Nernst material 11 having the anomalous Nernst effect, in which: the anomalous Nernst material 11 includes at least an element having the inverse spin-Hall effect; and the element is spin-polarized. By applying, for example, a magnetic field to such the thermoelectric conversion element 10 in the x direction and a temperature gradient thereto in the z direction, thermoelectromotive force can be taken out from terminals 12.

A bolometer having low resistance and a method for manufacturing the same are provided.

The present invention relates to a bolometer comprising two electrodes provided on a substrate and a bolometer film comprising carbon nanotubes, wherein the bolometer film is provided to connect an area of the top surfaces of the two electrodes, an area in contact with the electrode walls of the two electrodes, and an area between the two electrodes on the substrate; and the area density of the area of the bolometer film in contact with the electrode wall is less than or equal to the area density of the area between the electrodes on the substrate, or the film thickness of the area of the bolometer film in contact with the electrode wall is less than or equal to the film thickness of the area between the electrodes on the substrate.