A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first intermediate layer stacked on the first electrode layer, a second intermediate layer stacked on the first intermediate layer, and a piezoelectric thin film stacked on the second intermediate layer, the first intermediate layer includes K, Na, and Nb, the second intermediate layer is a layer causing stress in a compression direction in the piezoelectric thin film, and the piezoelectric thin film includes (K,Na)NbO.sub.3.

An electromechanical transducer element includes a first electrode on a diaphragm, an electromechanical transducer film on the first electrode, and a second electrode on the electromechanical transducer film. The electromechanical transducer film has a stacking structure. The electromechanical transducer film has a linear tapered shape that narrows from a first side facing the first electrode to a second side facing the second electrode in a cross section along a stacking direction.

Methods for forming an integrated circuit are provided. Aspects include providing a wafer substrate having an embedded memory area interconnect structure and an embedded non-memory area interconnect structure, the memory area interconnect structure comprising metal interconnects formed within a first interlayer dielectric, recessing a portion of the memory area interconnect structure, forming a bottom electrode contact on the recessed portion of the memory area interconnect structure, forming a bottom electrode over the bottom electrode contact, forming a protective dielectric layer over the non-memory area interconnect structure, and forming memory element stack layers on a portion of the bottom electrode.

A wafer-level chip-scale package includes a polymeric body having a conductive via passing through the polymeric body and a piezoelectric substrate directly bonded to an upper end of the conductive via. The wafer-level chip-scale package further includes a cavity defined between a portion of the polymeric body and the piezoelectric substrate and a metal seal ring disposed in the body and having an upper end bonded to the piezoelectric substrate, the metal seal ring passing only partially through the body.

A method of manufacture for an acoustic resonator device. The method can include forming a topside metal electrode overlying a piezoelectric substrate with a piezoelectric layer and a seed substrate. A topside micro-trench can be formed within the piezoelectric layer and a topside metal can be formed overlying the topside micro-trench. This topside metal can include a topside metal plug formed within the topside micro-trench. A first backside trench can be formed underlying the topside metal electrode, and a second backside trench can be formed underlying the topside micro-trench. A backside metal electrode can be formed within the first backside trench, while a backside metal plug can be formed within the second backside trench and electrically coupled to the topside metal plug and the backside metal electrode. The topside micro-trench, the topside metal plug, the second backside trench, and the backside metal plug form a micro-via.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

An acoustic resonator includes a resonant portion including a piezoelectric layer disposed between a first electrode and a second electrode, and a frame portion disposed along an outer edge of the second electrode. The frame portion includes three reflective portions reflecting lateral waves generated in the resonant portion.

In accordance with some embodiments, a method of forming an auto-focusing device is provided. The method includes forming a cantilever beam member. The cantilever beam member has a ring shape. The method further includes forming a piezoelectric member over the cantilever beam member. The method also includes forming a membrane over the cantilever beam member. The membrane has a first region and a second region. The first region has a planar surface, and the second region is located between the first region and an inner edge of the cantilever beam member and has a plurality of corrugation structures. In addition, the method includes applying a liquid optical medium over the membrane and sealing the liquid optical medium with a protection layer.

Semiconductor strain gages fabricated on Silicon-on-insulator (SOI) material, and the method of making them. Force sensing elements are uniformly batch-fabricated at wafer level and singulated individually by a wire bonding method. In another method, they are singulated by plucking them off the wafer from their attachment site.