A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

A power generating device including an element and a moving member. The element is deformable and generates power when deforming. The moving member moves when receiving a vibration, and contacts the element when moving. When the moving member contacts the element, the element deforms into another state or returns to a previous state.

A piezoelectric actuator has a ground substrate layer, an intermediate layer containing at least one of Ti and TiO.sub.2 on the ground substrate layer, an electrode layer containing Pt on the intermediate layer, and a piezoelectric layer containing lead zirconate titanate on the electrode layer, in which the lead zirconate titanate contained in the piezoelectric layer is preferentially oriented in the (100), (001), or (110) direction, the Pt contained in the electrode layer is preferentially oriented in the (111) direction, and the half width of the rocking curve in the (111) plane of the Pt contained in the electrode layer in X-ray diffraction is 1 or more.

A dual nitride landing pad for a high performance magnetoresistive random access memory (MRAM) device is formed on a recessed surface of the least one electrically conductive structure in a MRAM device area. The dual nitride landing pad includes a bottom metal nitride landing pad and a TaN-containing landing pad.

A piezoelectric device includes a piezoelectric vibrating piece, an excitation electrode, an extraction electrode, a container, a pad, a conductive member, and a heat conductive metal film. The excitation electrode is disposed on a front surface and a back surface of the piezoelectric vibrating piece. The extraction electrode is extracted from the excitation electrode. The container houses the piezoelectric vibrating piece. The pad is disposed in the container, and the pad is connected to the piezoelectric vibrating piece. The conductive member connects the pad to the extraction electrode. The heat conductive metal film is disposed at least on a surface of a pad side of the piezoelectric vibrating piece, the heat conductive metal film is extracted from the extraction electrode without contacting the excitation electrode.

Semiconductor strain gages fabricated on Silicon-on-insulator (SOI) material, and the method of making them. Force sensing elements are uniformly batch-fabricated at wafer level and singulated individually by a wire bonding method. In another method, they are singulated by plucking them off the wafer from their attachment site.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

A product includes an array of cold spray-formed structures. Each of the structures is characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of a raw material from which the structure is formed, and essentially the same functional properties as the raw material. A product includes a cold spray-formed structure characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of a raw material from which the structure is formed, and essentially the same functional properties as the raw material.