A lithium niobate semiconductor structure includes: a first lithium niobate material layer, a second lithium niobate material layer and a third lithium niobate material layer. A polarization direction of a ferroelectric domain of the first lithium niobate material layer is a first direction. The second lithium niobate material layer is spaced apart from the first lithium niobate material layer, and a polarization direction of a ferroelectric domain of the second lithium niobate material layer is the first direction. The third lithium niobate material layer is sandwiched between the first lithium niobate material layer and the second lithium niobate material layer, and a polarization direction of a ferroelectric domain of the third lithium niobate material layer is a second direction; the first direction is opposite to the second direction.

A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

An acoustic wave device includes a silicon substrate, a first high-acoustic-velocity film on the silicon substrate, a first low-acoustic-velocity film on the first high-acoustic-velocity film, a second low-acoustic-velocity film on the first low-acoustic-velocity film, a second high-acoustic-velocity film on the second low-acoustic-velocity film, a piezoelectric film on the second high-acoustic-velocity film, and an IDT electrode on the piezoelectric film. Acoustic velocities of bulk waves propagating through the first and second high-acoustic-velocity films are higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric film. Acoustic velocities of bulk waves propagating through the first and second low-acoustic-velocity films are lower than an acoustic velocity of a bulk wave propagating through the piezoelectric film. Materials of the first and second low-acoustic-velocity films are different from each other.

An acoustic wave device includes a silicon substrate, a first high-acoustic-velocity film on the silicon substrate, a first low-acoustic-velocity film on the first high-acoustic-velocity film, a second low-acoustic-velocity film on the first low-acoustic-velocity film, a second high-acoustic-velocity film on the second low-acoustic-velocity film, a piezoelectric film on the second high-acoustic-velocity film, and an IDT electrode on the piezoelectric film. Acoustic velocities of bulk waves propagating through the first and second high-acoustic-velocity films are higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric film. Acoustic velocities of bulk waves propagating through the first and second low-acoustic-velocity films are lower than an acoustic velocity of a bulk wave propagating through the piezoelectric film. Materials of the first and second low-acoustic-velocity films are different from each other.

A piezoelectric device includes a base and a laminated portion. The laminated portion includes, at least above a recess, a piezoelectric layer, a pair of electrode layers to apply a voltage to the piezoelectric layer, and a membrane covering the recess. The membrane includes a piezoelectric membrane, in the piezoelectric layer, that swells on at least one of a side of the recess and a side opposite to the side of the recess.

A piezoelectric device includes a base and a laminated portion. The laminated portion includes, at least above a recess, a piezoelectric layer, a pair of electrode layers to apply a voltage to the piezoelectric layer, and a membrane covering the recess. The membrane includes a piezoelectric membrane, in the piezoelectric layer, that swells on at least one of a side of the recess and a side opposite to the side of the recess.

A vehicular camera includes a camera housing having front and rear camera housing portions. An imager is disposed at a printed circuit board. A lens assembly is disposed at the front camera housing portion and accommodates at least one lens. The front camera housing portion is formed of a material having a first Coefficient of Thermal Expansion (CTE). At least two attachment elements are disposed at the front camera housing portion and are formed of a material having a second CTE that is less than the first CTE of the front camera housing portion and that is less than 10 ppm/° C. The printed circuit board is mounted at the attachment elements via fasteners threadedly engaging respective ones of the at least two attachment elements. The front camera housing portion and the attachment elements cooperate to decrease temperature-induced movement of the printed circuit board relative to the at least one lens.

A piezoelectric transducer device includes a support, a piezoelectric element, a first connecting element and a second electrical connecting element, the piezoelectric element being carried by the support and each of the first and second electrical connecting elements being electrically connected, respectively, to a first area and a second area, distinct from the first area, of the piezoelectric element, the piezoelectric element including a lower face opposite the support and an upper face, opposite to the lower face, wherein the upper face is integrally exposed or is covered, partially or not, only with the second electrical connecting element.

A MEMS component is described herein, which according to one exemplary embodiment includes: a semiconductor body; an insulation layer arranged on the semiconductor body; a boundary structure arranged on the insulation layer, the semiconductor body including an opening below the boundary structure; first and second structured electrodes arranged on the insulation layer; and a piezoelectric layer comprising a thermoplastic, and at least partially bounded by the boundary structure and arranged on the insulation layer and on the first and second electrodes.

An approach providing a semiconductor structure that provides a self-leveling, flowable, dielectric material for a gap fill material between vertical structures in many emerging non-volatile memory devices that are being formed with vertical structures for increasing memory device density. The semiconductor structure provides a flat dielectric surface between a plurality of contacts in a back end of the line metal layer in both the memory region and in the logic region of the semiconductor structure. The semiconductor structure includes a first portion of the plurality of contacts that each connect to a pillar-based memory device in an array of pillar-based memory devices. The first portion of the contacts that each connect to a pillar-based memory device in the array of memory devices reside in a conventional interlayer dielectric material under the self-leveling dielectric material. The flowable, self-leveling material provides a flat dielectric surface during contact formation.