A method for producing a composite piezoelectric body includes: forming a composite piezoelectric body by filling a non-conductive polymer between a plurality of piezoelectric materials arranged in an array state at predetermined intervals, and polishing one surface of the composite piezoelectric body, from which surface at least the piezoelectric materials and the polymer are exposed, by using an abrasive film in which an abrasive particle is applied to a base film.

The present disclosure is of a bone conduction sound transmission device. The bone conduction sound transmission device comprises a laminated structure and a base structure. The laminated structure is formed by a vibration unit and an acoustic transducer unit. A base structure is configured to load the laminated structure, and at least one side of the laminated structure is physically connected to the base structure. The base structure vibrates based on an external vibration signal, and the vibration unit deforms in response to the vibration of the base structure; and the acoustic transducer unit generates an electrical signal based on the deformation of the vibration unit.

Provided is a multilayer transformable device with enhanced driving displacement and a display device including the same. The multilayer transformable device, for example, includes a plurality of unit transformable devices, each of the unit transformable devices that includes a lower electrode, an upper electrode, and a transformable layer including an electro-active polymer (EAP) and a sub-transformable layer disposed between the plurality of unit transformable devices, the sub-transformable layer including a sub-EAP different from the EAP.

A method for forming a MEMS device is provided. The method includes forming a stack of layers on a base piezoelectric layer. The stack of layers includes a base metal film over the base piezoelectric layer; a first piezoelectric film over the base metal film; and a first metal film having an opening therein over the first piezoelectric film. The method also includes forming a trench in the stack of layers, wherein the trench passes through the opening in the first metal film but does not expose the base metal film; after forming the trench, forming a spacer structure under the first metal film but spaced apart from the base metal film; after forming the spacer structure, deepening the trench to expose the base metal film; and forming a contact in the trench.

An ultrasonic transducer, including a piezoelectric element with physical characteristics of radial resonant frequencies and thickness resonant frequencies, and with an upper surface and a lower surface opposite to each other through the piezoelectric element and a lateral surface connecting the upper surface and the lower surface, and an acoustic matching layer set on the upper surface of the piezoelectric element and having a first resonant matching part and a second resonant matching part, wherein a thickness of the first resonant matching part in a direction perpendicular to the upper surface is greater than a thickness of the second resonant matching part in the direction, and the thickness of the first resonant matching part matches one radial resonant frequency of the piezoelectric element and the thickness of the second resonant matching part matches another radial resonant frequency or one of the thickness resonant frequency of the piezoelectric element.

Provided is a piezoelectric thin film device in which lattice mismatch between a piezoelectric thin film and a lower electrode layer (first electrode layer) is reduced. A piezoelectric thin film device 10 comprises a first electrode layer 6a and a piezoelectric thin film 2 laminated directly on the first electrode layer 6a; the first electrode layer 6a includes an alloy composed of two or more metal elements; the first electrode layer 6a has a face-centered cubic lattice structure; and the piezoelectric thin film 2 has a wurtzite structure.

A stacked film includes an oxide film including a ZrO.sub.2 film, a metal oxide film provided on the oxide film, and a predetermined metal film provided on the metal oxide film and having a single orientation, and the metal oxide film is a PtO film or a PdO film. In the case of this structure, the predetermined metal film has a single orientation, and characteristics of the piezoelectric film such as PZT formed on the predetermined metal film are improved. Therefore, excellent characteristics such as an increase in the driving force due to the piezoelectric film or a reduction in leakage current can be exhibited.

An apparatus includes a dielectric tile array including a plurality of dielectric tiles; and a plurality of electroactive (EA) material blocks configured to expand or contract in response to being actuated by the application of an actuation voltage.

The present disclosure relates to the field of integrated circuit package design and, more particularly, to packages using a bumpless build-up layer (BBUL) designs. Embodiments of the present description relate to the field of fabricating microelectronic packages, wherein a first microelectronic device having through-silicon vias may be stacked with a second microelectronic device and used in a bumpless build-up layer package.

A BAW component, a lamination for a BAW component, and a method for manufacturing a BAW component are provided. A lamination for a BAW component includes a first layer with a first piezoelectric material and a second layer with a second piezoelectric material that is different than the first piezoelectric material. The first and the second piezoelectric material can be Sc doped AlN and AlN, respectively.