Provided are a piezoelectric element having high stability, which operates with high efficiency, and a method for manufacturing the piezoelectric element. The piezoelectric element (10) has a laminate structure in which a first electrode (14), a first piezoelectric film (16), a second electrode (18), an adhesion layer (20), an interlayer (22), a third electrode (24), a second piezoelectric film (26), and a fourth electrode (28) are laminated in this order on a silicon substrate (12). The interlayer (22) is formed of a material different from that of the second electrode (18) and has a thickness of 0.4 ?m to 10 ?m. A device having a diaphragm structure or a cantilever structure is formed by removing a part of the silicon substrate (12). The respective layers (14 to 28) laminated on the silicon substrate (12) can be formed using a thin film formation method represented by a vapor phase epitaxial method.

According to various embodiments, a MEMS device includes a substrate, an electrically movable heating element having a first node coupled to a first terminal of a first voltage source and the second node coupled to a reference voltage source, a first anchor anchoring the first node and a second anchor anchoring the second node of the electrically movable heating element to the substrate, and a cavity between the first anchor and the second anchor and between the electrically movable heating element and the substrate.

A thin loudspeaker includes a substrate, a conductive trace on the substrate and forming a printed circuit, and one or more piezoelectric diaphragms fixedly attached to the substrate and electrically connected to the conductive traces.

Provided is a piezoelectric element including a first electrode provided above a substrate, a piezoelectric layer provided above the first electrode, containing potassium, sodium, and niobium, and having a perovskite structure, and a second electrode provided above the piezoelectric layer. In a case where the piezoelectric layer is divided into two portions at a center thereof in a thickness direction, the piezoelectric layer includes a first portion on the first electrode side and a second portion on the second electrode side. The piezoelectric layer includes line defects. A density of the line defects in the second portion is higher than a density of the line defects in the first portion.

A fluidic device incorporating at least one BAW resonator structure (e.g., a biosensing device) and a fluidic passage includes one or more features that provide filtration capability. Certain embodiments include at least one group of pillars extending into the fluidic passage which are arranged between an active region of the at least one BAW resonator structure and at least one fluidic port. Individual pillars are separated from one another by inter-pillar spaces that provide redundant fluid flow paths while preventing passage of obstruction media such as particulate matter, cells, and/or bubbles. Certain embodiments provide porous material arranged in fluid communication with at least one fluidic port and configured to filter contents of fluid supplied thereto. Porous material (e.g., porous membranes) may be provided in a cover structure of a fluidic device or within a filtration cartridge.

An optical scanning device includes: a pair of twist beams arranged on both sides of a mirror along a predetermined axis and configured to swing the mirror around the axis; a pair of connection beams connected to the respective twist beams; a piezoelectric sensor formed on the connection beams and configured to detect a displacement of the connection beams caused by a swing of the mirror around the axis; wherein the piezoelectric sensor includes a lower electrode; a piezoelectric thin film stacked on the lower electrode; and an upper electrode stacked on or above the piezoelectric thin film, wherein a bottom surface and a side surface of the piezoelectric thin film form a tilt angle ?, and wherein the tilt angle is greater than 0? and less than or equal to 50?.

A piezoelectric actuator is formed like a rectangular flat plate, and includes a substrate layer, a lower electrode layer, a piezoelectric layer, and an upper electrode layer formed in this order from bottom to top in a thickness direction. The upper electrode layer is constituted of a plurality of electrode segments separated in a surface direction, and connection wires connecting the electrode segments which are adjoining in the surface direction.

A coated bearing component comprising a metallic part and a coating deposited on the metallic part. The coating is a multi-layer coating having a sensor active layer made of a material having electrostrictive properties. The sensor active layer is directly coated on the metallic part. The bearing component can be integrated into a bearing.

Disclosed is a silicon nanowire pressure sensor including a lower substrate with a diaphragm recess in a lower surface thereof, an upper substrate having a first surface attached to an upper surface of the lower substrate, silicon nanowires formed on the first surface of the upper substrate, resistive portions exposed on a second surface of the upper substrate, and a diaphragm region formed by etching a center portion of the second surface of the upper substrate so as to be aligned with the resistive portions, in which the diaphragm recess is larger than the diaphragm region.

An acoustic wave device comprises a piezoelectric material and a second material disposed on the piezoelectric material and having a temperature coefficient of frequency of a sign opposite a sign of a temperature coefficient of frequency of the piezoelectric material, the second material including one or more of Si.sub.1-x-yTi.sub.xP.sub.yO.sub.2-zF.sub.z (x,y,z<0.1), Si.sub.1-x-yGe.sub.xP.sub.yO.sub.2-zF.sub.z, Si.sub.1-x-yB.sub.xP.sub.yO.sub.2-zF.sub.z (x=y<0.04), Si.sub.1-3xZn.sub.xP.sub.2xO.sub.2-yF.sub.y, Si.sub.1-xP.sub.xO.sub.2-yF.sub.y, Si.sub.1-2yGa.sub.xP.sub.xO.sub.4, Si.sub.1-2yGa.sub.y-xB.sub.xP.sub.yO.sub.4, Si.sub.1-2yGa.sub.y-xB.sub.xP.sub.yO.sub.4-zF.sub.z, TiNb.sub.10O.sub.29, Si.sub.1-xTi.sub.xO.sub.2-yF.sub.y, Si.sub.1-x-yTi.sub.xP.sub.yO.sub.2, Si.sub.1-xB.sub.xO.sub.2-yF.sub.y, Si.sub.1-x-yB.sub.xP.sub.yO.sub.2, GeO.sub.2, GeO.sub.2-yF.sub.y, Si.sub.1-xGe.sub.xO.sub.2, Si.sub.1-xGe.sub.xO.sub.2-yF.sub.y, Si.sub.1-x-yGe.sub.xP.sub.yO.sub.2, ZnP.sub.2O.sub.6, Si.sub.1-3xZn.sub.xP.sub.2xO.sub.2, Ge.sub.1-3xZn.sub.xP.sub.2xO.sub.2, TeO.sub.x, Si.sub.1-xTe.sub.xO.sub.2+y, Ge.sub.1-xTe.sub.xO.sub.2+y, Si.sub.1-3x-yGe.sub.yZn.sub.xP.sub.2xO.sub.2, Si.sub.1-xP.sub.xO.sub.2-xN.sub.x, SiOC, Si.sub.1-2yAl.sub.xP.sub.xO.sub.4, or BeF.sub.2.