The present invention is a room temperature superconductor comprising of a wire, which comprises of an insulator core and a metal coating. The metal coating is disposed around the insulator core, and the metal is coating deposited on the core. When a pulsed current is passed through the wire, while the wire is vibrated, room temperature superconductivity is induced.

In the composite substrate 10, the piezoelectric substrate 12 and the support substrate 14 are bonded by direct bonding using an ion beam. One surface of the piezoelectric substrate 12 is a negatively-polarized surface 12a and another surface of the piezoelectric substrate 12 is a positively-polarized surface 12b. An etching rate at which the negatively-polarized surface 12a is etched with a strong acid may be higher than an etching rate at which the positively-polarized surface 12b is etched with the strong acid. The positively-polarized surface 12b of the piezoelectric substrate 12 is directly bonded to the support substrate 14. The negatively-polarized surface 12a of the piezoelectric substrate 12 may be etched with the strong acid.

An electromechanical transducer includes an electromechanical transducer film of laminated layers including a perovskite-type complex oxide represented by a general formula of ABO.sub.3; and a pair of electrodes opposed to each other with the electromechanical transducer film interposed between the pair of electrodes. In the general formula of ABO.sub.3, A includes Pb and B includes Zr and Ti. A variable ratio ?Pb of Pb, determined by Pb(max)?Pb(min), is 6% or less and a variable ratio ?Zr of Zr, determined by Zr(max)?Zr(min), is 9% or less, where an atomic weight ratio of Pb in the electromechanical transducer film is denoted by Pb/B, an atomic weight ratio of Zr in the electromechanical transducer film is denoted by Zr/B, a maximum value and a minimum value of the atomic weight ratio of Pb in a film thickness direction of the electromechanical transducer film are denoted by Pb(max) and Pb(min), respectively, and a maximum value and a minimum value of the atomic weight ratio of Zr in the film thickness direction of the electromechanical transducer film are denoted by Zr(max) and Zr(min), respectively.

There is provided a piezoelectric element which includes a first electrode which is formed on a substrate, a piezoelectric layer which is formed on the first electrode, and is formed from a compound oxide having an ABO.sub.3 type perovskite structure in which potassium (K), sodium (Na), niobium (Nb), and manganese (Mn) are provided, and a second electrode which is formed on the piezoelectric layer. The manganese includes bivalent manganese (Mn.sup.2+), trivalent manganese (Mn.sup.3+), and tetravalent manganese (Mn.sup.4+). A molar ratio (Mn.sup.2+/Mn.sup.3++Mn.sup.4+) of the bivalent manganese to a sum of the trivalent manganese and the tetravalent manganese is equal to or greater than 0.31.

A piezoelectric film containing (K,Na)NbO.sub.3 as the main component, wherein, when a surface of the piezoelectric film was observed in a field view within a specified range, a plurality of first crystals and a plurality of second crystals are arranged in the surface of the piezoelectric film, wherein, the first crystal has a slender shape orientating toward the first orientation along the surface, and the second crystal has a slender shape orientating toward the second orientation which crosses with the first orientation along the surface.

In the composite substrate, the piezoelectric substrate and the support substrate are bonded by direct bonding using an ion beam. One surface of the piezoelectric substrate is a negatively-polarized surface and another surface of the piezoelectric substrate is a positively-polarized surface. An etching rate at which the negatively-polarized surface is etched with a strong acid may be higher than an etching rate at which the positively-polarized surface is etched with the strong acid. The positively-polarized surface of the piezoelectric substrate is directly bonded to the support substrate. The negatively-polarized surface of the piezoelectric substrate may be etched with the strong acid.

A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

A method of forming a piezoelectric microphone with an interlock/stopper and a micro-bump and a resulting device are provided. Embodiments include forming a membrane over a Si substrate having a first and second sacrificial layer disposed on opposite surfaces thereof, the membrane being formed on the first sacrificial layer, forming a first HM over the membrane, forming first and second vias through the first HM, forming a first pad layer in the first and second vias and over an exposed top thin film, forming a trench to the first sacrificial layer between the first and second vias and a gap between the trench and second via, patterning a second HM over the membrane, in the first and second vias, the trench and the gap, and forming a second pad layer over the second HM and in exposed areas around the first and second vias to form pad structures.

There is provided a piezoelectric element which includes a first electrode, a piezoelectric layer which is formed on the first electrode by using a solution method, and is formed from a compound oxide having a perovskite structure in which potassium, sodium, and niobium are provided, and a second electrode which is provided on the piezoelectric layer. A cross-sectional SEM image of the piezoelectric layer is captured at a magnification of 100,000. When evaluation is performed under a condition in which a measured value in a transverse direction is set to 1,273 nm, two or more voids are included in the piezoelectric layer, a difference between the maximum value and the minimum value among diameters of the voids to be largest in a film thickness direction is equal to or smaller than 14 nm, and the maximum value is equal to or smaller than 24 nm.

A piezoelectric thin film contains potassium sodium niobate represented by general formula (K.sub.1-xNa.sub.x)NbO.sub.3 and CaTiO.sub.3, wherein the lattice spacing calculated from the diffraction peak of the (001) plane in an X-ray diffraction profile of the piezoelectric thin film is 3.975 ? or less, and the ratio I.sub.101/I.sub.001 of the diffraction peak intensity I.sub.101 of the (101) plane to the diffraction peak intensity I.sub.001 of the (001) plane in the X-ray diffraction profile of the piezoelectric thin film 3 satisfies the relationship log.sub.10(I.sub.101/I.sub.001)??2.10.