A heterostructure includes a substrate exhibiting a piezoelectric effect, and a magnetostrictive film supported by the substrate. The magnetostrictive film includes an iron-gallium alloy. The iron-gallium alloy has a gallium composition greater than 20%.

Magnetoelectric heterostructures, and related articles, systems, and methods, are generally described.

A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.

A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.

An input device includes an operation member, an actuator configured to impart a tactile effect to the operation member, and a controller configured to apply, to the actuator, a control signal for starting to apply a first vibration to the operation member at a first timing and for starting to apply a second vibration to the operation member at a second timing after the first timing, such that a combined vibration of the first vibration and the second vibration is applied to the operation member. The controller is configured to change a duration of a first period of the combined vibration to two or more different durations of the first period by changing a control period of time that extends from the first timing to the second timing to two or more different control periods of time.

A high-sensitivity and ultra-low power consumption magnetic sensor using a magnetoelectric (ME) composite comprising of magnetostrictive and piezoelectric layers. This sensor exploits the magnetically driven resonance shift of a free-standing magnetoelectric micro-beam resonator. Also disclosed is the related method for making the magnetic sensor.

A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.

A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.

A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.

A probe head of a magnetostrictive oscillator includes a probe head body which includes a hollow cylindrical portion with a first end, a second end, a radially inner side, and a radially outer side. The probe head body further includes a hemispherical portion connected to the first end of the hollow cylindrical portion. The probe head further includes a heater element within the radially outer side of the hollow cylindrical portion and an electrically insulative layer around the heater element. The heater element and the electrically insulative layer are integral with the probe head body.