A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the first magnetic free layer is composed of an ordered magnetic alloy. The ordered magnetic alloy provides a first magnetic free layer that has low moment, but is strongly magnetic. The use of such an ordered magnetic alloy first magnetic free layer in a multilayered magnetic free layer structure substantially reduces the switching current needed to reorient the magnetization of the two magnetic free layers.

The invention comprises a method of forming a novel magnetic pinning structure having a (100) textured or cube-textured reference layer through a non-epitaxial texturing approach so that an excellent coherent tunneling effect is achieved in a pMTJ element due to its texture structure of CoFe BCC (100)/MgO rocksalt (100)/CoFe BCC (100). Correspondingly, a high MR ratio and a high pinning strength on the reference layer can be achieved for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

The invention comprises a method of forming a magnetic free layer having a (100) texture and a novel magnetic pinning structure having a (100) textured or cube-textured reference layer through a non-epitaxial texturing approach so that an excellent coherent tunneling effect is achieved in a pMTJ element due to its texture structure of Fe or CoFe BCC (100)/MgO rocksalt (100)/Fe or CoFe BCC (100). The invention also discloses a pMTJ element comprising a soft-magnetic adjacent layer having at least one high-permeability material layer having a near-zero magnetostriction. Correspondingly, a high MR ratio and a coherent domain reversal of the magnetic free layer can be achieved for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

A memory device is provided, the memory device comprising a contact pillar in a dielectric layer. A magnetic tunnel junction may be provided over the contact pillar. A barrier layer may be provided on a sidewall of the magnetic tunnel junction and extending over a horizontal surface of the dielectric layer. A spacer may be provided over the barrier layer.

The present invention relates to a sensor device which has high S/N and excellent temperature characteristics. A sensor device has a semiconductor substrate, a first metal wiring layer provided on the semiconductor substrate, a first insulating layer provided on the first metal wiring layer, a compound semiconductor sensor element provided on the first insulating layer, a second metal wiring layer provided on the compound semiconductor sensor element and the first insulating layer, and a second insulating layer provided on the second metal wiring layer. A third insulating layer is provided between the first metal wiring layer and the second metal wiring layer, and the compound semiconductor sensor element is provided in the third insulating layer.

An improved magnetic tunnel junction with two oxide interfaces on each side of a ferromagnetic layer (FML) leads to higher PMA in the FML. The novel stack structure allows improved control during oxidation of the top oxide layer. This is achieved by the use of a FML with a multiplicity of ferromagnetic sub-layers deposited in alternating sequence with one or more non-magnetic layers. The use of non-magnetic layers each with a thickness of 0.5 to 10 Angstroms and with a high resputtering rate provides a smoother FML top surface, inhibits crystallization of the FML sub-layers, and reacts with oxygen to prevent detrimental oxidation of the adjoining ferromagnetic sub-layers. The FML can function as a free or reference layer in an MTJ. In an alternative embodiment, the non-magnetic material such as Mg, Al, Si, Ca, Sr, Ba, and B is embedded by co-deposition or doped in the FML layer.

An MTJ structure having vertical magnetic anisotropy is provided. The MTJ structure having vertical magnetic anisotropy can comprise: a substrate; an artificial antiferromagnetic layer located on the substrate; a buffer layer located on the artificial antiferromagnetic layer, and including W or an alloy containing W; a first ferromagnetic layer located on the buffer layer, and having vertical magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer, and having vertical magnetic anisotropy. Accordingly, in the application of bonding the artificial antiferromagnetic layer with a CoFeB/MgO/CoFeB structure, the MTJ structure having improved thermal stability at high temperature can be provided by using the buffer layer therebetween.

The inventive concepts provide a method for forming a hard mask pattern. The method includes forming a hard mask layer on an etch target layer disposed on a substrate, forming a photoresist pattern having an opening exposing one region of the hard mask layer, performing an oxygen ion implantation process on the one region using the photoresist pattern as a mask to form an oxidized portion in the one region, and patterning the hard mask layer using the oxidized portion as an etch mask.

A method of manufacturing an MRAM device includes sequentially forming a first insulating interlayer and an etch-stop layer on a substrate. A lower electrode is formed through the etch-stop layer and the first insulating interlayer. An MTJ structure layer and an upper electrode are sequentially formed on the lower electrode and the etch-stop layer. The MTJ structure layer is patterned by a physical etching process using the upper electrode as an etching mask to form an MTJ structure at least partially contacting the lower electrode. The first insulating interlayer is protected by the etch-stop layer so not to be etched by the physical etching process.

A magnetic memory of an embodiment includes: a first magnetic member including a first and second portions and extending in a first direction; a first and second wirings disposed to be apart from the first magnetic member and extending in a second direction intersecting the first direction, the first and the second wirings being separated from each other in a third direction intersecting the first and second directions, the first magnetic member being disposed to be apart from a region between the first wiring and the second wiring in the first direction; and a second magnetic member surrounding at least parts of the first and second wirings, the second magnetic member including a third portion located to be more distant from the first magnetic member, a fourth portion located to be closer to the first magnetic member, and a fifth portion located in the region.