A domain wall displacement element includes a magnetoresistance element which has a reference layer and a domain wall displacement layer each containing a ferromagnetic body, a non-magnetic layer, and first and second magnetization fixed layers which are in contact with the displacement layer, wherein the first layer has a first region in contact with the displacement layer, a non-magnetic first intermediate layer, and a second region contacting the first intermediate layer, the first region has a first ferromagnetic layer contacting the first intermediate layer, the second region has a second ferromagnetic layer contacting the first intermediate layer, the first and second ferromagnetic layers are ferromagnetically coupled, a ferromagnetic layer closest to the displacement layer in the first region and a ferromagnetic layer closest to displacement layer in the second magnetization fixed layer have the same film configuration, and the first and second regions are different in film configuration.

A system and method for a logic device is disclosed. A first substrate, and a second substrate is provided, which are spaced apart from each other and manifests Spin orbit torque effect. A nanomagnet is disposed over the first substrate and the second substrate. A first charge current is passed through the first substrate and a second charge current is passed through the second substrate. A direction of flow of the first charge current and the second charge current defines an input value of either a first value or a second value. A spin in the nanomagnet is selectively oriented based on the direction of flow of the first charge current and the second charge current. The spin in the nanomagnet is selectively read to determine an output value as the first value or the second value. The logic device is configured as a XOR logic.

A system and method for a logic device is disclosed. A first substrate, and a second substrate is provided, which are spaced apart from each other and manifests Spin orbit torque effect. A nanomagnet is disposed over the first substrate and the second substrate. A first charge current is passed through the first substrate and a second charge current is passed through the second substrate. A direction of flow of the first charge current and the second charge current defines an input value of either a first value or a second value. A spin in the nanomagnet is selectively oriented based on the direction of flow of the first charge current and the second charge current. The spin in the nanomagnet is selectively read to determine an output value as the first value or the second value. The logic device is configured as a XOR logic.

An activation function generator based on a magnetic domain wall driven magnetic tunnel junction and a method for manufacturing the same are provided, including: a spin orbit coupling layer configured to generate a spin orbit torque; a ferromagnetic free layer formed on the spin orbit coupling layer and configured to provide a magnetic domain wall motion racetrack; a nonmagnetic barrier layer formed on the ferromagnetic free layer; a ferromagnetic reference layer formed on the nonmagnetic barrier layer; a top electrode formed on the ferromagnetic reference layer; antiferromagnetic pinning layers formed on two ends of the ferromagnetic free layer; a left electrode and a right electrode respectively formed at two positions on the antiferromagnetic pinning layers.

An activation function generator based on a magnetic domain wall driven magnetic tunnel junction and a method for manufacturing the same are provided, including: a spin orbit coupling layer configured to generate a spin orbit torque; a ferromagnetic free layer formed on the spin orbit coupling layer and configured to provide a magnetic domain wall motion racetrack; a nonmagnetic barrier layer formed on the ferromagnetic free layer; a ferromagnetic reference layer formed on the nonmagnetic barrier layer; a top electrode formed on the ferromagnetic reference layer; antiferromagnetic pinning layers formed on two ends of the ferromagnetic free layer; a left electrode and a right electrode respectively formed at two positions on the antiferromagnetic pinning layers.

A device which includes a free layer and a current channel. The free layer has a configurable magnetization state. The current channel includes a low-symmetry crystal with only one mirror plane. The low-symmetry material has relatively large unconventional spin Hall effect (SHE). A current through the current channel applies a spin-orbit torque that sets the magnetization state of the free layer.

A device which includes a free layer and a current channel. The free layer has a configurable magnetization state. The current channel includes a low-symmetry crystal with only one mirror plane. The low-symmetry material has relatively large unconventional spin Hall effect (SHE). A current through the current channel applies a spin-orbit torque that sets the magnetization state of the free layer.

A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, a computer system, and an MRAM device. The MRAM stack includes a first magnetic layer including a Heusler compound. The MRAM stack also includes one or more seed layers including a multi-layer templating structure that includes a crystalline structure configured to template the Heusler compound and enhance a tunnel magnetoresistance (TMR) of the MRAM stack. The first magnetic layer is formed over the multi-layer templating structure. The multi-layer templating structure includes a layer of a first binary alloy including tungsten-aluminum (WAl), and a layer of a second binary alloy having a cesium-chloride (CsCl) structure. The second binary alloy overlays the first binary alloy.

A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, a computer system, and an MRAM device. The MRAM stack includes a first magnetic layer including a Heusler compound. The MRAM stack also includes one or more seed layers including a multi-layer templating structure that includes a crystalline structure configured to template the Heusler compound and enhance a tunnel magnetoresistance (TMR) of the MRAM stack. The first magnetic layer is formed over the multi-layer templating structure. The multi-layer templating structure includes a layer of a first binary alloy including tungsten-aluminum (WAl), and a layer of a second binary alloy having a cesium-chloride (CsCl) structure. The second binary alloy overlays the first binary alloy.

In one aspect, a magnetic tunnel junction (MTJ) device includes an MTJ element including a magnetic reference layer, a magnetic free layer, and a non-magnetic barrier layer separating the magnetic reference layer and the magnetic free layer. Further, a spin-orbit torque (SOT) layer structure is arranged below the MTJ element and configured to provide a write current switching a magnetization direction of the magnetic free layer through SOT. The SOT layer structure includes a heavy metal layer and a magnetic layer. The magnetic layer is arranged below the heavy metal layer and configured to induce a magnetic field in the magnetic free layer in a direction of the write current through the SOT layer structure, thereby promoting deterministic switching of the magnetization of the magnetic free layer.