A ferromagnetic free layer, a preparation method and an application thereof are provided, where the ferromagnetic layer includes a magnetic film alloy, and the magnetic film alloy includes multiple layers of laminated films. A thickness of each of the films decreases gradually from a first end to a second end of the magnetic film alloy, so as to break in-plane structural symmetry of the magnetic film alloy, and the films include heavy metal films and ferromagnetic metal films, where out-of-plane crystal symmetry of the magnetic film alloy is broken by means of component gradients. When a current is applied in plane of the magnetic film alloy, a spin orbit torque will be generated, which directly drives the magnetic moment of the magnetic film alloy to undergo a deterministic magnetization reversal.

A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.

The present disclosure relates to a spin-orbit torque-based switching device and a method of fabricating the same. The spin-orbit torque-based switching device of the present disclosure includes a spin torque generating layer provided with a tungsten-vanadium alloy thin film exhibiting perpendicular magnetic anisotropy (PMA) characteristics and a magnetization free layer formed on the spin torque generating layer.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.

A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.

A method for manufacturing a Hall sensor, an insulation layer being initially applied to a wafer including an ASIC or integrated into the wafer, a Hall layer, for example, made of InSb or another III-V semiconductor material, being situated thereon, and this Hall layer being at least sectionally recrystallized with the aid of a laser. The insulation layer may be porous or may include a cavity or reflective layer for thermal protection of the ASIC.

A method for fabricating semiconductor device includes the steps of first providing a substrate having a magnetic random access memory (MRAM) region and a logic region, forming a first inter-metal dielectric (1MB) layer on the substrate, forming a first metal interconnection and a second metal interconnection in the first IMD layer on the MRAM region, forming a spin orbit torque (SOT) layer on the first metal interconnection and the second metal interconnection, forming a magnetic tunneling junction (MTJ) stack on the SOT layer, forming a hard mask on the MTJ stack, using the hard mask to pattern the MTJ stack for forming the MTJ, forming the cap layer on the SOT layer and the hard mask, and patterning the cap layer and the SOT layer.

A method for fabricating semiconductor device includes the steps of first providing a substrate having a magnetic random access memory (MRAM) region and a logic region, forming a first inter-metal dielectric (1MB) layer on the substrate, forming a first metal interconnection and a second metal interconnection in the first IMD layer on the MRAM region, forming a spin orbit torque (SOT) layer on the first metal interconnection and the second metal interconnection, forming a magnetic tunneling junction (MTJ) stack on the SOT layer, forming a hard mask on the MTJ stack, using the hard mask to pattern the MTJ stack for forming the MTJ, forming the cap layer on the SOT layer and the hard mask, and patterning the cap layer and the SOT layer.