A thin film heterostructure of a topological insulator (TI) with a normal metal (NM) is used as a highly energy efficient and low power dissipation spin Hall Material (SHM). The TI material is sputter deposited onto a substrate and cooled in high vacuum, and an NM material is sputter deposited onto the TI film. The structure and method is compatible with complementary metal oxide (CMOS) processes, and with growth of large-area TI films for wafer-level device fabrication.

A magnetic flux concentrator (MFC) structure comprises a substrate, a first metal layer disposed on or over the substrate, and a second metal layer disposed on or over the first metal layer. Each metal layer comprises (i) a first wire layer comprising first wires conducting electrical signals, and (ii) a first dielectric layer disposed on the first wire layer. A magnetic flux concentrator is disposed at least partially in the first metal layer, in the second metal layer, or in both the first and the second metal layers. The structure can comprise an electronic circuit or a magnetic sensor with sensing plates. The structure can comprise a transformer or an electromagnet with suitable control circuits. The magnetic flux concentrator can comprise a metal stress-reduction layer in the first or second wire layers and a core formed by electroplating the stress-reduction layer.

A method of producing a semiconductor substrate comprising at least one integrated magnetic flux concentrator, comprising the steps of: a) providing a semiconductor substrate having an upper surface; b) making at least one cavity in said upper surface; c) depositing one or more layers of one or more materials, including sputtering at least one layer of a soft magnetic material; d) removing substantially all of the soft magnetic material that is situated outside of the at least one cavity, while leaving at least a portion of the soft magnetic material that is inside said at least one cavity. A semiconductor substrate comprising at least one integrated magnetic flux concentrator. A sensor device or a sensor system, a current sensor device or system, a position sensor device or system, a proximity sensor device or system, an integrated transformer device or system.

A memory is capable of storing coupled qubits. The memory includes a plurality of memory cells, wherein each of the memory cells is for storing values of one of the qubits. The memory also includes an electronic controller electrically connected to operate said memory cells. The controller is able to selectively store a qubit value to any of the memory cells in either a first state or a second state. The controller is configured to read any one of the memory cells in a manner dependent on whether the first state or the second state was previously used to store a qubit value in the same one of the memory cells.

A magnetic sensor has a Hall IC that has a Hall element formed on a surface of the Hall IC, and a lead frame that supports the Hall IC. The lead frame includes a first region that is disposed in the vicinity of the Hall element and generates a first magnetic field due to a first eddy current generated when a measurement target magnetic field is applied, and second regions that are disposed away from the first region and generate a second magnetic field having an intensity that cancels the first magnetic field by means of second eddy currents generated when the measurement target magnetic field is applied.

A memory cell is disclosed which includes a semiconductor layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another along a first axis and wherein the semiconductor layer extends beyond the first axis along a second axis substantially perpendicular to the first axis, thereby forming a first wing, a third electrode separated from the semiconductor layer by an insulating layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.

A spin-orbit torque device is disclosed, which includes: a magnetic layer; and a non-magnetic layer adjacent to the magnetic layer and comprising a spin-Hall material, wherein the spin-Hall material comprises Ni.sub.xCu.sub.1-x alloy, and x is in a range from 0.4 to 0.8.

A semiconductor device includes first and second Hall-effect sensors. Each sensor has first and third opposite terminals and second and fourth opposite terminals. A control circuit is configured to direct a current through the first and second sensors and to measure a corresponding Hall voltage of the first and second sensors. Directing includes applying a first source voltage in a first direction between the first and third terminals of the first sensor and applying a second source voltage in a second direction between the first and third terminals of the second sensor. A third source voltage is applied in a third direction between the second and fourth terminals of the first sensor, and a fourth source voltage is applied in a fourth direction between the second and fourth terminals of the second sensor. The third direction is rotated clockwise from the first direction and the fourth direction rotated counter-clockwise from the second direction.

Data storage devices are provided. A data storage device includes a memory transistor on a substrate and a data storage structure electrically connected to the memory transistor. The data storage structure includes a magnetic tunnel junction pattern and a top electrode on the magnetic tunnel junction pattern. The top electrode includes a first top electrode and a second top electrode on the first top electrode, and the first and second top electrodes include the same metal nitride. The first top electrode includes first crystal grains of the metal nitride, and the second top electrode includes second crystal grains of the metal nitride. In a section of the top electrode, the number of the first crystal grains per a unit length is greater than the number of the second crystal grains per the unit length.

An integrated sensor device includes: a semiconductor substrate comprising a horizontal Hall element, and an integrated magnetic flux concentrator located substantially above said horizontal Hall element, wherein the first magnetic flux concentrator has a shape with a geometric center which is aligned with a geometric centre of the horizontal Hall element; and wherein the shape has a height H and a transversal dimension D, wherein H≥30 μm and/or wherein (H/D)≥25%. The integrated magnetic flux concentrator may be partially incorporated in the “interconnection stack”. A method is provided for producing such an integrated sensor device.