A material exhibiting transport phenomena of Weyl fermions is composed of SrRuO.sub.3 and has a ratio of a resistivity p at 300 K to a resistivity p at 4 K [residual resistivity ratio RRR=ρ(300 K)/ρ(4 K)] of 20 or greater.

A Hall sensor includes a Hall well, such as an implanted region in a surface layer of a semiconductor structure, and four doped regions spaced apart from one another in the implanted region. The implanted region and the doped regions include majority carriers of the same conductivity type. The sensor also includes a dielectric layer that extends over the implanted region, and an electrode layer over the dielectric layer to operate as a control gate to set or adjust the sensor performance. A first supply circuit provides a first bias signal to a first pair of the terminals, and a second supply circuit provides a second bias signal to the electrode layer.

An integrated sensor and method for manufacturing the sensor includes a first component having a first material with a predetermined first value of coefficient of thermal expansion (CTE), and a second component over the first component. The second component includes a second material with a predetermined second value of CTE different from the first value. An interlayer is provided by molecular layer deposition, for minimizing stress caused by coefficient of thermal expansion mismatch between the first and second components. The interlayer includes an organic-inorganic hybrid polymer compound.

A physically unclonable function is an object that has characteristics that make it extremely difficult or impossible to copy. An array of randomly dispersed hard (magnetized) and soft (non-magnetized) magnetic particles that may be conducting or nonconducting that are disbursed in a binder create a particular magnetic field or capacitive pattern on the surface. This surface magnetic field and capacitive variations can be considered to be a unique pattern similar to fingerprint. The Hall effect prism is a sensor that measures the effects of these patterns by sensing the deformation of currents or electric potential flowing within or around a resistive substrate material that exhibits a substantial Hall effect coefficient.

Various embodiments provide a triaxial magnetic sensor, formed on or in a substrate of semiconductor material having a surface that includes a sensing portion and at least one first and one second sensing wall, which are not coplanar to each other. The sensing portion and the first sensing wall form a first solid angle, the sensing portion and the second sensing wall form a second solid angle, and the first sensing wall and the second sensing wall form a third solid angle. A first Hall-effect magnetic sensor extends at least partially over the sensing portion, a second Hall-effect magnetic sensor extends at least partially over the first sensing wall, and a third Hall-effect magnetic sensor extends at least partially over the second sensing wall.

A method of controlling a trajectory of a perpendicular magnetization switching of a ferromagnetic layer using spin-orbit torques in the absence of any external magnetic field includes: injecting a charge current J.sub.e through a heavy-metal thin film disposed adjacent to a ferromagnetic layer to produce spin torques which drive a magnetization M out of an equilibrium state towards an in-plane of a nanomagnet; turning the charge current J.sub.e off after t.sub.e seconds, where an effective field experienced by the magnetization of the ferromagnetic layer H.sub.eff is significantly dominated by and in-plane anisotropy H.sub.kx, and where M passes a hard axis by precessing around the H.sub.eff; and passing the hard axis, where H.sub.eff is dominated by a perpendicular-to-the-plane anisotropy H.sub.kz, and where M is pulled towards the new equilibrium state by precessing and damping around H.sub.eff, completing a magnetization switching.

This spin element includes: a current-carrying part that extends in a first direction; and an element part that is laminated on one surface of the current-carrying part, wherein the current-carrying part includes a first wiring and a second wiring in order from a side of the element part, and wherein both of the first wiring and the second wiring are metals and temperature dependence of resistivity of the first wiring is larger than temperature dependence of resistivity of the second wiring in at least a temperature range of −40° C. to 100° C.

Described is a method comprising directing an ultra-low voltage electron beam to a surface of a first insulating layer. The first insulating layer is disposed on a second insulating layer. The method includes modifying, by the application of the ultra-low voltage electron beam, the surface of the first insulating layer to selectively switch an interface between a first state having a first electronic property and a second state having a second electronic property.

A memory cell is disclosed which includes a semiconductor layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another along a first axis and wherein the semiconductor layer extends beyond the first axis along a second axis substantially perpendicular to the first axis, thereby forming a first wing, a third electrode separated from the semiconductor layer by an insulating layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.

The present disclosure generally relates to a SOT-MRAM cell that has a spin Hall effect layer and a magnetic tunnel junction. The magnetic tunnel junction is disposed at an edge of the spin Hall effect layer. In order to write the cell, current is applied through the spin Hall effect layer to create spin accumulation of z-polarized spins under the free layer due to the spin Hall effect. The spins exert a spin torque on the free layer via spin diffusion. Based upon the design, the SOT-MRAM cell has deterministic switching of the perpendicular free layer with the spin Hall effect layer without application of an external magnetic field.