A Hall element that exhibits an anomalous Hall effect includes a substrate and a thin film as a magneto-sensitive layer on the substrate, the thin film having a composition of Fe.sub.xSn.sub.1-x, where 0.5≤x<0.9. The thin film may be made of an alloy of Fe and Sn, and a dopant element. The dopant element may be a transition metal element that modulates spin-orbit coupling or magnetism. The dopant element may be a main-group element that has a different number of valence electrons from Sn and modulates carrier density. The dopant element may be a main-group element that modulates density of states.

A spin element includes a wiring, a laminated body including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part which sandwich the first ferromagnetic layer in a plan view in a laminating direction, and a first high resistance layer which is in contact with the wiring between the first conductive part and the wiring and has an electrical resistivity equal to or higher than that of the wiring.

A high-temperature three-dimensional Hall sensor with a real-time working temperature monitoring function includes a buffer layer, an epitaxial layer, and a barrier layer sequentially grown on a substrate. A high-density two-dimensional electron gas is induced by polarization charges in a potential well at an interface of heterojunctions of the epitaxial layer. A lower surface of the substrate includes a vertical Hall sensor for sensing a magnetic field parallel to a surface of a device. An upper surface of the barrier layer includes a “cross” horizontal Hall sensor for sensing a magnetic field perpendicular to the surface of the device.

A magnetic domain wall movement type magnetic recording element according to an embodiment includes: a first ferromagnetic layer which includes a ferromagnetic body; a non-magnetic layer which faces the first ferromagnetic layer; and a magnetic recording layer which faces a surface of the non-magnetic layer on a side opposite to the first ferromagnetic layer and extends in a first direction. A first surface of the magnetic recording layer which faces the non-magnetic layer has a smaller arithmetic mean roughness than a second surface opposite to the first surface.

This spin element includes: a current-carrying part that extends in a first direction; and an element part that is laminated on one surface of the current-carrying part, wherein the current-carrying part includes a first wiring and a second wiring in order from a side of the element part, and wherein both of the first wiring and the second wiring are metals and temperature dependence of resistivity of the first wiring is larger than temperature dependence of resistivity of the second wiring in at least a temperature range of −40° C. to 100° C.

An SOI semiconductor structure, including a substrate layer formed on a back side and a semiconductor layer of a second conductivity type formed on a front side, an insulating layer being disposed between the substrate layer and the semiconductor layer, a three-dimensional Hall sensor structure having a sensor region made up of a monolithic semiconductor body being formed in the semiconductor layer, and the semiconductor body extending from an underside up to the front side, at least three first metallic terminal contacts being formed on the upper side, and at least three second metallic terminal contacts being formed on the underside, the first terminal contacts being offset with respect to the second terminal contacts in a projection perpendicular to the front side, each first terminal contact and each second terminal contact being formed in each case on a highly doped semiconductor contact region of a second conductivity type.

A semiconductor device includes a vertical Hall element provided in a first region of a semiconductor substrate, and having the first to the third electrodes arranged side by side in order along a first straight line; a circuit provided in a second region of the semiconductor substrate different from the first region, and having a heat source; and a second straight line intersecting orthogonally a current path for a Hall element drive current which flows between the first electrode and the third electrode. The second line passes a center of the vertical Hall element, and a center point of a region which reaches the highest temperature in the circuit during an operation of the vertical Hall element lies on the second straight line.

A method for configuring a reconfigurable physical unclonable function (PUF) based on a device with spin-orbit torque (SOT) effect is provided. The disclosure uses SOT or magnetic field to change the magnetic moment. After the current or magnetic field is removed, the magnetic moment returns to the easy axis direction. Under the effect of thermal fluctuation, the magnetic moment is randomly oriented in the easy axis direction. The non-volatile devices are formed into an array, the magnetic moments of all non-volatile devices are randomly distributed after a write operation. The read state can be used as a random code to implement the reconfigurable PUF. The PUF has a simple structure and guarantees security. The random code in the disclosure may be two-state or multi-state, which is related to the number of magnetic domains of the ferromagnetic layer. A large number of challenge response pairs form a strong PUF.

A spin element according to the present embodiment includes a wiring, a laminate including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part with the first ferromagnetic layer therebetween in a plan view in a lamination direction, and an intermediate layer which is in contact with the wiring and is between the first conductive part and the wiring, wherein a diffusion coefficient of a second element including the intermediate layer with respect to a first element including the wiring is smaller than a diffusion coefficient of a third element constituting the first conductive part with respect to the first element or a diffusion coefficient of the third element including the first conductive part with respect to the second element constituting the wiring is smaller than a diffusion coefficient of the third element with respect to the first element constituting the intermediate layer.

A magnetic recording array includes a plurality of spin elements arranged in a matrix, each spin element including a wiring and a stacked body that includes a first ferromagnetic layer stacked on the wiring, a plurality of write wirings connected to first ends of the respective wirings in the plurality of spin elements, a plurality of read wirings connected to the respective stacked bodies in the plurality of spin elements, and a plurality of common wirings connected to second ends of the wirings in the respective spin elements belonging to the same row, wherein the common wiring has an electrical resistance lower than the electrical resistance of the write wiring or the read wiring.