An integrated rotation-angle sensor unit in a measuring system for rotation angle determination, with a shaft that is rotatable about an axis of rotation with a transmitter, The sensor unit has a semiconductor layer with a top surface that can be arranged perpendicular to the axis of rotation and has a bottom surface, and two monolithic Hall sensor systems are implemented in the semiconductor layer. Each Hall sensor system has at least a first Hall sensor, a second Hall sensor, and a third Hall sensor, and the three Hall sensors of the first Hall sensor system are arranged on a first circle that is parallel to the top surface of the semiconductor layer and can be arranged concentrically around the axis of rotation.

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

The present disclosure provides a storage unit, a data writing method and a data reading method thereof, a memory and an electronic device. The storage unit includes a semiconductor substrate, a first insulating medium layer, a ferroelectric thin film layer, a bottom electrode, a tunnel junction, a first metal interconnection portion, a second metal interconnection portion, a third metal interconnection portion and a fourth metal interconnection portion. The first insulating medium layer is formed on the semiconductor substrate, the ferroelectric thin film layer is disposed on the first insulating medium layer, the bottom electrode is formed on the ferroelectric thin film layer, and the tunnel junction is formed on the bottom electrode. The first metal interconnection portion is connected to a first end of the bottom electrode, and the third metal interconnection portion is connected to a second end of the bottom electrode. The second metal interconnection portion is connected to the ferroelectric thin film layer, and the fourth metal interconnection portion is connected to the tunnel junction. As compared with the prior art, the present disclosure can control a directional flipping of the magnetic moment in the tunnel junction based on the ferroelectric thin film layer provided. Based on the structural design of the storage unit, the present disclosure does not require an external magnetic field, and fully meets the requirement of high integration of the device.

A cross-point SOT-MRAM cell includes: a first SHE write line; a second SHE write line non-colinear to the first SHE write line; a cross-point free layer comprising a first free layer, a second free layer, and a dielectric layer disposed between the first and the second free layers, the cross-point free layer configured to store a magnetic bit and located between and in contact with both the first SHE write line and the second SHE write line; and a remote sensing MTJ located in a vicinity of the cross-point free layer, wherein a free layer sensor of the remote sensing MTJ is in contact with one of the first SHE write line and the second SHE write line.

Electrical current transducer including an insulating body, a magnetic core comprising a central passage and a magnetic circuit gap, a magnetic field detector positioned in the magnetic circuit gap, and a sheet metal leadframe conductor arrangement comprising a primary conductor for carrying the current to be measured and secondary conductors for connecting the magnetic field detector to an external circuit, the primary conductor comprising a central portion extending through the central passage of the magnetic core, lateral extension arms extending from opposite ends of the central portion, and connection ends for connection to an external conductor, the secondary conductors comprising a plurality of conductors, each conductor comprising a sensing cell connection pad substantially aligned with the central portion of the primary conductor and a connection end for connection to the external circuit, the insulating body comprising an inner overmold portion surrounding a central portion of the primary conductor and forming a core guide positioning and insulating the magnetic core with respect to the leadframe conductor arrangement. The insulating body further comprises an outer overmold portion molded over the inner overmold portion, the magnetic core, magnetic field sensor, and a central portion of the leadframe conductor arrangement.

An electronic circuit can have a first plurality of vertical Hall elements and a second plurality of vertical Hall elements all disposed on a substrate having a plurality of crystal unit cells, wherein the first plurality of vertical Hall elements have longitudinal axes disposed within five degrees of parallel to an edge of the crystal unit cells, and wherein the second plurality of vertical Hall elements have longitudinal axes disposed between eighty-five and ninety-five degrees relative to the longitudinal axes of the first plurality of vertical Hall elements.

Provided are a magnetoresistive element, a magnetic memory device, and a writing and reading method for a magnetic memory device, in which an aspect ratio of a junction portion can be decreased. A magnetoresistive element 1 of the invention, includes: a heavy metal layer 2 that is an epitaxial layer; and a junction portion 3 including a recording layer 31 that is provided on the heavy metal layer 2 and includes a ferromagnetic layer of an epitaxial layer magnetized in an in-plane direction, which is an epitaxial layer, a barrier layer 32 that is provided on the recording layer 31 and includes an insulating body, and a reference layer 33 that is provided on the barrier layer 32 and has magnetization fixed in the in-plane direction, in which the recording layer 31 is subjected to magnetization reversal by applying a write current to the heavy metal layer 2.

A semiconductor device including a CMOS process-based Hall sensor is provided. The semiconductor device which may include a N-type sensing region which is formed on a semiconductor substrate; P-type contact regions and N-type contact regions which are alternately formed in the N-type sensing region; a plurality of first trenches which are formed in contact with the P-type contact regions and have a first width; and a plurality of second trenches which separate the P-type contact regions and the N-type contact regions and have a second width less than the first width.

A magnetic film includes a ferromagnetic layer. The ferromagnetic layer has a thickness or a width in a first direction which is longer than a thickness or a width in another direction, a crystalline structure is a tetragonal structure, and a main vector direction of a c axis of the tetragonal structure is the first direction.

A semiconductor device includes a semiconductor substrate: a vertical Hall element formed in the semiconductor substrate, and having a magnetosensitive portion; a first excitation wiring disposed above the magnetosensitive portion, and configured to apply a first calibration magnetic field (M1) to the magnetosensitive portion; and second excitation wirings disposed above the magnetosensitive portion on one side and on another side of the first excitation wiring, respectively, along the first excitation wiring as viewed in plan view from immediately above a front surface of the semiconductor substrate, and configured to apply second calibration magnetic fields (M2) to the magnetosensitive portion.