This superconducting wire includes: a strand including a superconducting material; and a stabilizer material for superconductor arranged in contact with the strand, wherein the stabilizer material for superconductor includes a copper material which contains one kind or two kinds or more of additive elements selected from Ca, Sr, Ba, and rare earth elements (RE) for a total amount of 3 ppm by mass or more and 400 ppm by mass or less, with the remainder being Cu and unavoidable impurities, the total concentration of the unavoidable impurities other than O, H, C, N, and S, which are gas components, is 5 ppm by mass or more and 100 ppm by mass or less, and compounds including one kind or two kinds or more selected from CaS, CaSO.sub.4, SrS, SrSO.sub.4, BaS, BaSO.sub.4, (RE)S, and (RE).sub.2SO.sub.2 are present in the matrix.

A technique relates a superconducting microwave cavity. An array of posts has different heights in the cavity, and the array supports a localized microwave mode. The array of posts includes lower resonant frequency posts and higher resonant frequency posts. The higher resonant frequency posts are arranged around the lower resonant frequency posts. A first plate is opposite a second plate in the cavity. One end of the lower resonant frequency posts is positioned on the second plate so as to be electrically connected to the second plate. Another end of the lower resonant frequency posts in the array is open so as not to form an electrical connection to the first plate. Qubits are connected to the lower resonant frequency posts in the array of posts, such that each of the qubits is physically connected to one or two of the lower resonant frequency posts in the array of posts.

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a base; a fin extending away from the base, wherein the fin includes a quantum well layer; a gate above the fin; and a material on side faces of the fin; wherein the fin has a width between its side faces, and the fin is strained in the direction of the width.

In various embodiments, superconducting wires feature assemblies of clad composite filaments and/or stabilized composite filaments embedded within a wire matrix. The wires may include one or more stabilizing elements for improved mechanical properties.

In various embodiments, superconducting wires incorporate diffusion barriers composed of Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

In various embodiments, superconducting wires incorporate diffusion barriers composed of Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

An ultra-thin film superconducting tape and method for fabricating same is disclosed. Embodiments are directed to a superconducting tape being fabricated by processes which include removing a portion of the superconducting tape's substrate subsequent the substrate's initial formation, whereby a thickness of the superconducting tape is reduced to 15-80 ?m.

A superconducting material includes YBa.sub.2Cu.sub.3O.sub.7-? and a nano-structured, preferably nanowires, WO.sub.3 dopant in a range of from 0.01 to 3.0 wt. %, preferably 0.075 to 0.2 wt. %, based on total material weight. Methods of making the superconductor may preferably avoid solvents and pursue solid-state synthesis employing Y, Ba, and/or Cu oxides and/or carbonates.

Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

The present invention relates to a method and an apparatus for producing superconducting devices and to superconducting devices. The method comprises determining one or more regions of reduced critical current density in the superconducting device and modifying the critical current density in the one or more regions of reduced critical current density, so as to increase the overall critical current or to decrease the overall AC losses of the superconducting device. The modifying comprises modifying the amount and/or distribution of the superconducting material in the one or more regions of reduced critical current density; and/or modifying the chemical composition of the superconducting material in the one or more regions of reduced critical current density; and/or decreasing the cooling temperature in the one or more regions of reduced critical current density. A superconducting device formed according to such method can also be provided.