In various embodiments, superconducting wires incorporate diffusion barriers composed of Nb alloys or Nb—Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

A superconducting coil includes: a winding member 12 that has a side surface 18 along a coil radial direction and is formed by laminating a superconducting tape wire 20 in the coil radial direction by winding; and a bypass 19 that is provided on the side surface 18 of the winding member 12 and electrically connects the superconducting tape wire 20 in the coil radial direction.

A dual pole high temperature superconductive parallel path switched reluctance motor combining high temperature superconductive wire in stator coils, a switched reluctance motor type, parallel path motor technology, and a configuration and geometry of electromagnetic coils and permanent magnets in a dual pole stator in a magnetically coupled relation to a dual annular salient rotor to create complete and continuous square, short flux path.

A dual pole high temperature superconductive parallel path switched reluctance motor combining high temperature superconductive wire in stator coils, a switched reluctance motor type, parallel path motor technology, and a configuration and geometry of electromagnetic coils and permanent magnets in a dual pole stator in a magnetically coupled relation to a dual annular salient rotor to create complete and continuous square, short flux path.

The various embodiments described herein include methods, devices, and systems for fabricating and operating transistors. In one aspect, a transistor includes: (1) a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and (2) a superconducting component configured to operate in a superconducting state while: (a) a temperature of the superconducting component is below a superconducting threshold temperature; and (b) a first current supplied to the superconducting component is below a current threshold; where: (i) the semiconducting component is located adjacent to the superconducting component; and (ii) in response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first current exceeds the lowered current threshold, thereby transitioning the superconducting component to a non-superconducting state.

Provided is a quantum device capable of improving cooling performance. A quantum device includes a quantum chip configured to perform information processing using a quantum state, and an interposer on which the quantum chip is mounted, and the quantum chip is arranged inside a recess 31 formed in a sample stage having a cooling function, and a part of the interposer is in contact with the sample stage. The quantum chip may have a first surface mounted on the interposer and a second surface opposite to the first surface, and at least a part of the second surface may be in contact with an inner surface of the recess.

A stacked quantum computing device including a first chip that includes a first dielectric substrate and a superconducting qubit on the first dielectric substrate, and a second chip that is bonded to the first chip and includes a second dielectric substrate, a qubit readout element on the second dielectric substrate, a control wire on the second dielectric substrate, a dielectric layer covering the control wire, and a shielding layer covering the dielectric layer.

Techniques regarding an embedded microstrip transmission line implemented in one more superconducting microwave electronic devices are provided. For example, one or more embodiments described herein can comprise an apparatus, which can include a superconducting material layer positioned on a raised portion of a dielectric substrate. The raised portion can extend from a surface of the dielectric substrate. The apparatus can also comprise a dielectric film that covers at least a portion of the superconducting material layer and the raised portion of the dielectric substrate.

Techniques regarding an embedded microstrip transmission line implemented in one more superconducting microwave electronic devices are provided. For example, one or more embodiments described herein can comprise an apparatus, which can include a superconducting material layer positioned on a raised portion of a dielectric substrate. The raised portion can extend from a surface of the dielectric substrate. The apparatus can also comprise a dielectric film that covers at least a portion of the superconducting material layer and the raised portion of the dielectric substrate.

In many cases after degaussing the field distribution in a magnetic material there may be regions within the magnetic material that have ordered domains that contribute a remnant field. There is the need to reduce or eliminate non-uniform fields within a volume of interest left after degaussing a magnetic shield. Degaussing coils surrounding a metal shield can be used to favorably order magnetic domains within the material to counteract the remnant fields left behind following imperfect degaussing. The remnant field value can be measured and a small current may be applied through the degaussing coils. After removing the current, the field can be measured again and a higher current may be applied again through the coils. Repeated applications of currents and field measurement will progressively order domains in the direction of the applied field, resulting in a reduction of the net field and lower field gradient across the volume of interest.