A light-controlled superconductor uses electrons as carriers, which includes a light source and a sealed tube, wherein the sealed tube is made of glass or plastic. The sealed tube is filled with electron gas, and the light source produces incident light, and under the irradiation of the incident light, electrons will be forced to vibrate and behave similarly to vibrating electric dipoles, and emit secondary electromagnetic waves, so that the average distance between the electrons in the sealed tube is much smaller than the wavelength of the incident light, causing the vibrating electrons to be in a near-field of each other. When the electric field intensity direction of the incident light and the electric moments of two vibrating electrons are in the same radial straight line and are in the same direction, there exists an attractive force among the vibrating electrons.

A multiple functioning superconductive device was invented based on Toroidal Josephson Junction (FFTJJ) array with 3D-cage structure self-assembled organo-metallic superlattice membrane. The device not only mimics the structure and function of an activated Matrix Metalloproteinase-2 (MMP-2) protein, but also mimics the cylinder structure of the Heat Shock Protein (HSP60) protein, that works at room temperature under a normal atmosphere, and without external electromagnetic power applied. The device enabled direct rapid real-time monitoring atto-molarity concentration ATP in biological specimens and was able to define the anti-inflammatory and pro-inflammatory status revealed a transitional range of ATP concentration under antibody-free, tracer-free and label-free conditions.

Multiple Josephson toroidal vertex quantum superconductive/memristive and superconductive/memcapacitive devices were invented with various superlattice structures, which work at room temperature without an applied external magnetic flux. The first type of the superlattices of the devices comprises of multiple-layers of organometallic polymers on gold chips by self-assembling that mimics the function of Matrix Metalloproteinase-2 (MMP-2). Another type of quantum superconductor/memristor comprises of multiple-organic polymers cross-linked with MMP-2 protein forming Josephson toroidal vertex on the gold surface. Models of the quantum superconductive/memristive and superconductive/memcapacitive devices were fabricated in nano superlattice structures and the devices module configurations were described. Three different methods were used to evaluate the devices' applications in sub fg/mL collagen-1 sensing, energy storage, and the super-position characteristics as a potential quantum bit device. The superconductivity, memristive, and memcapacitive functions were also evaluated in multiple methods, respectively.

A superconductor device includes a low-dimensional material with a critical temperature higher than a critical temperature corresponding to a bulk form of the low-dimensional material. The low-dimensional material can include shape and structural modifications of a low-dimensional material. The superconductor device can include various conformational arrangements of the low-dimensional material such as nanoribbons, nanotubes, or helices. The superconductor device can include functional groups, such as hydrogen, attached to the low-dimensional material. The superconductor device can include metallic clusters located in proximity to the low-dimensional material. The superconductor device can include a low-dimensional material which is a monolayer, bilayer or multilayer.

A first aspect provides a topological quantum computing device comprising a network of semiconductor-superconductor nanowires, each nanowire comprising a length of semiconductor formed over a substrate and a coating of superconductor formed over at least part of the semiconductor; wherein at least some of the nanowires further comprise a coating of ferromagnetic insulator disposed over at least part of the semiconductor. A second aspect provides a method of fabricating a quantum or spintronic device comprising a heterostructure of semiconductor and ferromagnetic insulator, by: forming a portion of the semiconductor over a substrate in a first vacuum chamber, and growing a coating of the ferromagnetic insulator on the semiconductor by epitaxy in a second vacuum chamber connected to the first vacuum chamber by a vacuum tunnel, wherein the semiconductor comprises InAs and the ferromagnetic insulator comprises EuS.

The invention relates to a component for electric, magnetic, or optical applications, comprising at least two adjacent layers (G.sub.B1, G.sub.B2) with a common boundary region (G.sub.FB). The first layer has graphite with a Bernal crystal structure (graphite 2H), and the second layer has graphite with a rhombohedral crystal structure (graphite 3R). The boundary region has at least one boundary area (G.sub.G) which has superconductive properties at a transition temperature (T.sub.c) higher than 78 K and/or a critical magnetic flux density (B.sub.k) greater than 1 T.

According to an embodiment, a radiation detector includes a plurality of absorbers, a resistor, and a heat bath member. The absorbers absorb radiation. The resistor undergoes a change in resistance according to a change in temperature of the absorbers. The heat bath member is maintained at a temperature at which resistance of the resistor becomes equal to a specific resistance value, and is positioned to be in thermal contact with the resistor. The absorbers are positioned to be in contact with the resistor, and are arranged at a distance from each other.

The present invention is a high temperature superconductor comprising of a wire, which comprises of an insulator core and a metal coating. The metal coating is disposed around the insulator core, and the metal is coating deposited on the core. When a pulsed current is passed through the wire, while the wire is vibrated, high temperature superconductivity is induced.

A method of fabricating an electrical contact junction that allows current to flow includes: providing a substrate including a first layer of superconductor material; removing a native oxide of the superconductor material of the first layer from a first region of the first layer; forming a capping layer in contact with the first region of the first layer, in which the capping layer prevents reformation of the native oxide of the superconductor material in the first region; forming, after forming the capping layer, a second layer of superconductor material that electrically connects to the first region of the first layer of superconductor material to provide the electrical contact junction that allows current to flow.

This disclosure relates to compounds of formula (I):

L.sub.nD.sub.m(B.sub.xB.sub.1-x).sub.r(Z.sub.tZ.sub.1-t).sub.qM.sub.pA.sub.y(I),

in which n, m, x, r, t, q, p, L, D, B, B, Z, Z, M, and A are defined in the specification. These compounds can exhibit superconductivity at a high temperature.