Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to integrated circuit fabrics including correlated electron switch devices having various impedance characteristics.

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, a correlated electron material may be doped using dopant species derived from one or more precursors utilized to fabricate nearby structures such as, for example, a conductive substrate or a conductive overlay.

Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

Heterostructures that include a bilayer composed of epitaxial layers of vanadium dioxide having different rutile-to-monoclinic phase transition temperatures are provided. Also provided are electrical switches that incorporate the heterostructures. The bilayers are characterized in that they undergo a single-step, collective, metal-insulator transition at an electronic transition temperature. At temperatures below the electronic transition temperature, the layer of vanadium dioxide having the higher rutile-to-monoclinic phase transition temperature has an insulating monoclinic crystalline phase, which is converted to a metallic monoclinic crystalline phase at temperatures above the electronic transition temperature.

The generation of photocurrent in an ideal two-dimensional Dirac spectrum is symmetry forbidden. In sharp contrast, a three-dimensional Weyl semimetal can generically support significant photocurrent due to the combination of inversion symmetry breaking and finite tilts of the Weyl spectrum. To realize this photocurrent, a noncentrosymmetric Weyl semimetal is coupled to a pair of electrodes and illuminated with circularly polarized light without any voltage applied to the Weyl semimetal. The wavelength of the incident light can range over tens of microns and can be adjusted by doping the Weyl semimetal to change its chemical potential.

A microelectronic device having a functional metal oxide channel may be fabricated on a microelectronic substrate that can be utilized in very large scale integration, such as a silicon substrate, by forming a buffer transition layer between the microelectronic substrate and the functional metal oxide channel. In one embodiment, the microelectronic device may be a microelectronic transistor with a source structure and a drain structure formed on the buffer transition layer, wherein the source structure and the drain structure abut opposing sides of the functional metal oxide channel and a gate dielectric is disposed between a gate electrode and the functional metal oxide channel. In another embodiment, the microelectronic device may be a two-terminal microelectronic device.

Subject matter disclosed herein may relate to fabrication of layered correlated electron materials (CEMs) in which a first group of one or more layers may comprise a first concentration of a dopant species, and wherein a second group of one or more layers may comprise a second concentration of a dopant species. In other embodiments, a CEM may comprise one or more regions of graded concentration of a dopant species.

Subject matter disclosed herein may relate to fabrication of layered correlated electron materials (CEMs) in which a first group of one or more layers may comprise a first concentration of a dopant species, and wherein a second group of one or more layers may comprise a second concentration of a dopant species. In other embodiments, a CEM may comprise one or more regions of graded concentration of a dopant species.

Layers of high quality VO.sub.2 and methods of fabricating the layers of VO.sub.2 are provided. The layers are composed of a plurality of connected crystalline VO.sub.2 domains having the same crystal structure and the same epitaxial orientation.

Layers of high quality VO.sub.2 and methods of fabricating the layers of VO.sub.2 are provided. The layers are composed of a plurality of connected crystalline VO.sub.2 domains having the same crystal structure and the same epitaxial orientation.