A nanogap electrode in an embodiment according to the present invention includes a first electrode including a first electrode layer and a first metal particle arranged at one end of the first electrode layer, and a second electrode including a second electrode layer and a second metal particle arranged at one end of the second electrode layer. The first metal particle and the second metal particle are arranged opposite to each other with a gap therebetween, and a width from one end to the other end of the first metal particle and the second metal particle is 20 nm or less. The gap between the first metal particle and the second metal particle is 10 nm or less.

The present application discloses a topological insulator structure including an insulating substrate, a topological insulator quantum well film, and an insulating protective layer. The topological insulator quantum well film and the insulating protective layer are orderly stacked on a surface of the insulating substrate, forming a heterojunction structure. The insulating protective layer is selected from the group consisting of the wurtzite-structured CdSe, the sphalerite-structured ZnTe, the sphalerite-structured CdSe, the sphalerite-structured CdTe, the sphalerite-structured HgSe, the sphalerite-structured HgTe, and combinations thereof. The present application also discloses a method for making the topological insulator structure.

The present application discloses a multi-channel topological insulator structure, including an insulating substrate, multiple topological insulator quantum well films, and multiple insulating interlayers. The topological insulator quantum well films and the insulating interlayers are alternately stacked on a surface of the insulating substrate. Two adjacent topological insulator quantum well films are separated by one insulating interlayer. The present application also discloses a method for making the multi-channel topological insulator structure and an electrical device.

A vacuum vessel supporting superconducting computing device environments includes a vacuum vessel having a cylindrical chamber defined by an internal frame, including upper and lower mounting rings, and at least two vertical support members disposed between the upper and lower mounting rings. The chamber is further defined by an upper plate releasably attached to the upper mounting ring, a lower plate releasably attached to the lower mounting plate, at least two side walls releasably attached to the upper mounting ring, the lower mounting ring and at least two vertical support members. Seal elements are disposed between the upper plate and the upper mounting ring, the lower plate and the lower mounting ring, and each side wall and the internal frame.

A system for applying orbital angular momentum (OAM) to electrons of a semiconductor material comprises a light source generator for generating a plane wave light beam. Orbital angular momentum (OAM) processing circuitry applies at least one orbital angular momentum to the plan wave light beam to generate an OAM light beam. The OAM processing circuitry controls transitions of electrons between quantized states within the semiconductor material to perform quantum entanglement within the semiconductor material responsive to the at least one orbital angular momentum applied to the plane wave light beam. A transmitter transmits the OAM light beam at the semiconductor material to induce the transitions of the electrons between the quantize states and perform the quantum entanglement within the semiconductor material.

Described herein are devices incorporating Casimir cavities, which modify the quantum vacuum mode distribution within the cavities. The Casimir cavities can drive charge carriers from or to an electronic device disposed adjacent to or contiguous with the Casimir cavity by modifying the quantum vacuum mode distribution incident on one side of the electronic device to be different from the quantum vacuum mode distribution incident on the other side of the electronic device. The electronic device can exhibit a structure that permits transport or capture of hot carriers in very short time intervals, such as in 1 picosecond or less.

Described herein are devices incorporating plasmon Casimir cavities, which modify the distribution of allowable plasmon modes within the cavities. The plasmon Casimir cavities can drive charge carriers from or to an electronic device adjoining the plasmon Casimir cavity by modifying the distribution of zero-point energy-driven plasmons on one side of the electronic device to be different from the distribution of zero-point energy-driven plasmons on the other side of the electronic device. The electronic device can exhibit a structure that permits transport or capture of carriers in very short time intervals, such as in 1 picosecond or less.

Described herein are devices in which quantum noise is reduced, such as by incorporating the devices as part of or adjacent to a Casimir cavity. The devices with reduced quantum noise can be paired with a free-space electric device to allow for a difference in noise power between the two to be captured.

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer, a doped layer, and a barrier layer disposed between the doped layer and the quantum well layer; and gates disposed above the quantum well stack. The doped layer may include a first material and a dopant, the first material may have a first diffusivity of the dopant, the barrier layer may include a second material having a second diffusivity of the dopant, and the second diffusivity may be less than the first diffusivity.

According to one aspect of the present invention, a switching device using an electron shuttle includes a substrate, a center portion fixed onto the substrate, a first wing portion extending from the center portion in a first direction and spaced apart from the substrate, a second wing portion extending from the center portion in a second direction and spaced apart from the substrate, a conductive first electron shuttle connected to the first wing portion and disposed to be spaced apart from the substrate, and a conductive second electron shuttle connected to the second wing portion and disposed to be spaced apart from the substrate.