A hybrid conductive material comprising at least one conductive material having at least one internal porous insulative layer; and wherein, at least one of the conductive materials fills the voids of the internal porous insulative layer. The hybrid material blends conductive metals and porous insulation layers in a manner so that the resulting material operates as a single layer material with its own unique conductivity and skin depth; and a unique and strong directional impedance. By using a porous insulation layer, metal layers may be bonded together through insulation layers, and this allows rapid low-cost formation of the hybrid material. The hybrid material may be used to form thin wires or traces capable of handling high frequency applications.

Disclosed is nano powder formed of a solid solution including crystalline silver and amorphous copper. The metal nano powder has peaks in X-ray powder diffraction spectrum using a Cu-K radiation of 38.180.2, 44.60.2, 64.500.2, 77.480.2 and 81.580.2 at a diffraction angle of 2. A composition ratio of silver:copper of the metal nano powder is 5.0 to 8.0:2.0 to 5.0 at %.

Disclosed is nano powder formed of a solid solution including crystalline silver and amorphous copper. The metal nano powder has peaks in X-ray powder diffraction spectrum using a Cu-K radiation of 38.180.2, 44.60.2, 64.500.2, 77.480.2 and 81.580.2 at a diffraction angle of 2. A composition ratio of silver:copper of the metal nano powder is 5.0 to 8.0:2.0 to 5.0 at %.

The present invention discloses an oxidation-resistant conductive copper past, a manufacturing method and a use thereof. The oxidation-resistant conductive copper paste comprises 70 wt % to 90 wt % of copper particles, a binder, a thixotropic agent and a solvent. The manufacturing method comprises the steps of mixing the binder, the thixotropic agent and ethanol thoroughly to obtain a first mixture; mixing the solvent with the first mixture thoroughly to obtain a second mixture; mixing the copper particles with the second mixture to obtain a conductive copper paste precursor; and removing the ethanol from the conductive copper paste precursor to obtain the oxidation-resistant conductive copper paste. The oxidation-resistant conductive copper paste can be used for manufacturing a conductive film of a circuit board or an electrode of a solar battery by a printing process.

The present invention discloses an oxidation-resistant conductive copper past, a manufacturing method and a use thereof. The oxidation-resistant conductive copper paste comprises 70 wt % to 90 wt % of copper particles, a binder, a thixotropic agent and a solvent. The manufacturing method comprises the steps of mixing the binder, the thixotropic agent and ethanol thoroughly to obtain a first mixture; mixing the solvent with the first mixture thoroughly to obtain a second mixture; mixing the copper particles with the second mixture to obtain a conductive copper paste precursor; and removing the ethanol from the conductive copper paste precursor to obtain the oxidation-resistant conductive copper paste. The oxidation-resistant conductive copper paste can be used for manufacturing a conductive film of a circuit board or an electrode of a solar battery by a printing process.

A front-side conductive paste for a crystalline silicon solar cell is provided. The front-side conductive paste for a crystalline silicon solar cell includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent, where based on 100% by mole of the oxide etching agent, the oxide etching agent includes 15-30% of PbO; 25-40% of TeO.sub.2; 8.0-15.0% of Li.sub.2O; 9.0-20.0% of SiO.sub.2; 5.0-15.0% of Bi.sub.2O.sub.3; 0.5-10.0% of ZnO; and either one or both of 0.1-10.0% of MgO and 0.1-10.0% of CaO; and no more than 5.0% of an oxide of additional metal elements. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.

A front-side conductive paste for a crystalline silicon solar cell is provided. The front-side conductive paste for a crystalline silicon solar cell includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent, where based on 100% by mole of the oxide etching agent, the oxide etching agent includes 15-30% of PbO; 25-40% of TeO.sub.2; 8.0-15.0% of Li.sub.2O; 9.0-20.0% of SiO.sub.2; 5.0-15.0% of Bi.sub.2O.sub.3; 0.5-10.0% of ZnO; and either one or both of 0.1-10.0% of MgO and 0.1-10.0% of CaO; and no more than 5.0% of an oxide of additional metal elements. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.

A front-side conductive paste for a crystalline silicon solar cell is provided. The front-side conductive paste for a crystalline silicon solar cell includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent, where based on 100% by mole of the oxide etching agent, the oxide etching agent includes 15-30% of PbO; 25-40% of TeO.sub.2; 8.0-15.0% of Li.sub.2O; 9.0-20.0% of SiO.sub.2; 5.0-15.0% of Bi.sub.2O.sub.3; 0.5-10.0% of ZnO; and either one or both of 0.1-10.0% of MgO and 0.1-10.0% of CaO; and no more than 5.0% of an oxide of additional metal elements. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.

The present invention provides a thick-film paste composition for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal and a dual-frit oxide composition dispersed in an organic medium.

The present invention provides a thick-film paste composition for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal and a dual-frit oxide composition dispersed in an organic medium.