Aspects relate to patterned nanostructures having a feature size not including film thickness of below 5 microns. The patterned nanostructures are made up of nanoparticles having an average particle size of less than 100 nm. A nanoparticle composition, which, in some cases, includes a binder, is applied to a substrate. A patterned mold used in concert with electromagnetic radiation function to manipulate the nanoparticle composition in forming the patterned nanostructure. In some embodiments, the patterned mold nanoimprints a pattern onto the nanoparticle composition and the composition is cured through UV or thermal energy. Three-dimensional patterned nanostructures may be formed. A number of patterned nanostructure layers may be prepared and joined together. In some cases, a patterned nanostructure may be formed as a layer that is releasable from the substrate upon which it is initially formed. Such releasable layers may be arranged to form a three-dimensional patterned nanostructure for suitable applications.

Artificial synaptic devices with an HfO.sub.2-based ferroelectric layer that can be implemented in the CMOS back-end are provided. In one aspect, an artificial synapse element is provided. The artificial synapse element includes: a bottom electrode; a ferroelectric layer disposed on the bottom electrode, wherein the ferroelectric layer includes an HfO.sub.2-based material that crystallizes in a ferroelectric phase at a temperature of less than or equal to about 400 C.; and a top electrode disposed on the bottom electrode. An artificial synaptic device including the present artificial synapse element and methods for formation thereof are also provided.

Artificial synaptic devices with an HfO.sub.2-based ferroelectric layer that can be implemented in the CMOS back-end are provided. In one aspect, an artificial synapse element is provided. The artificial synapse element includes: a bottom electrode; a ferroelectric layer disposed on the bottom electrode, wherein the ferroelectric layer includes an HfO.sub.2-based material that crystallizes in a ferroelectric phase at a temperature of less than or equal to about 400 C.; and a top electrode disposed on the bottom electrode. An artificial synaptic device including the present artificial synapse element and methods for formation thereof are also provided.

A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In an embodiment the dielectric composition includes particles having a perovskite crystal structure including at least Bi, Na, Sr and Ti, wherein at least some of the particles have a core-shell structure including a core portion and a shell portion, and wherein the content of Bi present in the core portion is no greater than 0.83 times the content of Bi present in the shell portion.

A dielectric composition, a dielectric element, an electronic component and a laminated electronic component are disclosed. In an embodiment the dielectric composition includes particles having a perovskite crystal structure including at least Bi, Na, Sr and Ti, wherein at least some of the particles have a core-shell structure including a core portion and a shell portion, and wherein the content of Bi present in the core portion is no greater than 0.83 times the content of Bi present in the shell portion.

Provided is a method for regulating a thermal boundary conductance between a metal and an insulator, including: arranging a metal on a surface of an insulator, a contact surface between the metal and the insulator being a boundary between the metal and the insulator; and the insulator including a ferroelectric, a piezoelectric, or a pyroelectric; applying an external electric field or stress to the ferroelectric, and adjusting a magnitude of the external electric field or stress, or an included angle between a direction of the external electric field or stress with the boundary to regulate the thermal boundary conductance; or applying a stress to the piezoelectric, and adjusting a magnitude of the stress, or an included angle between a direction of the stress with the boundary to regulate the thermal boundary conductancer; or adjusting a temperature of the pyroelectric to regulate the thermal boundary conductance.

Provided is a method for regulating a thermal boundary conductance between a metal and an insulator, including: arranging a metal on a surface of an insulator, a contact surface between the metal and the insulator being a boundary between the metal and the insulator; and the insulator including a ferroelectric, a piezoelectric, or a pyroelectric; applying an external electric field or stress to the ferroelectric, and adjusting a magnitude of the external electric field or stress, or an included angle between a direction of the external electric field or stress with the boundary to regulate the thermal boundary conductance; or applying a stress to the piezoelectric, and adjusting a magnitude of the stress, or an included angle between a direction of the stress with the boundary to regulate the thermal boundary conductancer; or adjusting a temperature of the pyroelectric to regulate the thermal boundary conductance.

An alumina-ceramic-based electrical insulator, to a method for producing the insulator, and to a vacuum tube includes the insulator. The electrical insulator is for insulating two electrodes of a vacuum tube through which a charged particle beam flows, the electrical insulator being formed of an alumina-based ceramic. The ceramic comprises a vitreous phase of between 2% and 8% by weight into which at least one metal oxide is diffused from a face of the electrical insulator.

An alumina-ceramic-based electrical insulator, to a method for producing the insulator, and to a vacuum tube includes the insulator. The electrical insulator is for insulating two electrodes of a vacuum tube through which a charged particle beam flows, the electrical insulator being formed of an alumina-based ceramic. The ceramic comprises a vitreous phase of between 2% and 8% by weight into which at least one metal oxide is diffused from a face of the electrical insulator.

An electrical steel sheet is provided with insulating coating. The insulating coating contains Si and Fe. The coating weight of Si in the insulating coating in terms of SiO.sub.2 is 50% to 99% of the total coating weight. The ratio (Fe/Si) of the content of Fe to the content of Si in the insulating coating is 0.01 to 0.6 on a molar basis. The ratio (C (the organic resin+the lubricant)/(Fe.sub.2O.sub.3+SiO.sub.2)) of the coating weight of the organic resin and/or the lubricant in terms of C to the sum of the coating weight of Fe in terms of Fe.sub.2O.sub.3 and the coating weight of Si in terms of SiO.sub.2 preferably is 0.05 to 0.8.