A biometric authentication system including: a translucent protective plate having an authentication region on a front face of the protective plate, and a reverse side forming the second face of the plate, essentially in parallel to the front face; a light emitting source to illuminate an object pressed against or being in touch with the authentication region; a sensor arranged at the reverse side or in a distance from the reverse side; an optical path from the authentication region to the sensor; an optical filter within the optical path;
whereat the optical filter is a layered near infrared (NIR) filter including: at least one of an inner ZnO.sub.x and/or inner TiO.sub.x layer at a substrate side; followed by a multitude of silver layers, each silver layer being separated from each neighboring silver layer by at least one of a further ZnO.sub.x and/or a further TiO.sub.x layer; at least one of an outer ZnO.sub.x layer, an outer TiO.sub.x layer, and/or a blocking layer deposited on the outermost silver layer.

A biometric authentication system including: a translucent protective plate having an authentication region on a front face of the protective plate, and a reverse side forming the second face of the plate, essentially in parallel to the front face; a light emitting source to illuminate an object pressed against or being in touch with the authentication region; a sensor arranged at the reverse side or in a distance from the reverse side; an optical path from the authentication region to the sensor; an optical filter within the optical path;
whereat the optical filter is a layered near infrared (NIR) filter including: at least one of an inner ZnO.sub.x and/or inner TiO.sub.x layer at a substrate side; followed by a multitude of silver layers, each silver layer being separated from each neighboring silver layer by at least one of a further ZnO.sub.x and/or a further TiO.sub.x layer; at least one of an outer ZnO.sub.x layer, an outer TiO.sub.x layer, and/or a blocking layer deposited on the outermost silver layer.

Aspects relate to patterned nanostructures having a feature size not including film thickness of below 5 microns. The patterned nanostructures are made up of nanoparticles having an average particle size of less than 100 nm. A nanoparticle composition, which, in some cases, includes a binder, is applied to a substrate. A patterned mold used in concert with electromagnetic radiation function to manipulate the nanoparticle composition in forming the patterned nanostructure. In some embodiments, the patterned mold nanoimprints a pattern onto the nanoparticle composition and the composition is cured through UV or thermal energy, Three-dimensional patterned nanostructures may be formed. A number of patterned nanostructure layers may be prepared and joined together. In some cases, a patterned nanostructure may be formed as a layer that is releasable from the substrate upon which it is initially formed. Such releasable layers may be arranged to form a three-dimensional patterned nanostructure for suitable applications.

Aspects relate to patterned nanostructures having a feature size not including film thickness of below 5 microns. The patterned nanostructures are made up of nanoparticles having an average particle size of less than 100 nm. A nanoparticle composition, which, in some cases, includes a binder, is applied to a substrate. A patterned mold used in concert with electromagnetic radiation function to manipulate the nanoparticle composition in forming the patterned nanostructure. In some embodiments, the patterned mold nanoimprints a pattern onto the nanoparticle composition and the composition is cured through UV or thermal energy, Three-dimensional patterned nanostructures may be formed. A number of patterned nanostructure layers may be prepared and joined together. In some cases, a patterned nanostructure may be formed as a layer that is releasable from the substrate upon which it is initially formed. Such releasable layers may be arranged to form a three-dimensional patterned nanostructure for suitable applications.

A heating element unit for an electric resistance heater comprises: a casing; a heating element within the casing; and an electrical insulator between the heating element and the casing. In some embodiments, the electrical insulator comprises first and second layers, the second layer having a greater dielectric strength than the first layer, and the second layer having: a dielectric strength of greater than about 1500 kV/m (greater than about 40 V/mil). In some embodiments, the electrical insulator comprises an electrically-insulating granular material and has a dielectric strength greater than about 1500 kV/m (greater than about 40 V/mil).

A heating element unit for an electric resistance heater comprises: a casing; a heating element within the casing; and an electrical insulator between the heating element and the casing. In some embodiments, the electrical insulator comprises first and second layers, the second layer having a greater dielectric strength than the first layer, and the second layer having: a dielectric strength of greater than about 1500 kV/m (greater than about 40 V/mil). In some embodiments, the electrical insulator comprises an electrically-insulating granular material and has a dielectric strength greater than about 1500 kV/m (greater than about 40 V/mil).

An insulating filler composed of a mixed powder in which a hydrophobic fumed oxide powder having an average primary particle size D.sub.1, which is smaller than an average primary particle size D.sub.2, is adhered to the surface of a magnesium oxide powder and/or a nitride-based inorganic powder having the average primary particle size D.sub.2, wherein: the ratio D.sub.1/D.sub.2 of the average primary particle size D.sub.1 to the average primary particle size D.sub.2 is 6×10.sup.−5 to 3×10.sup.−3; the volume resistivity of the mixed powder is 1×10.sup.11 Ω.Math.m or more; and the content ratio of the hydrophobic fumed oxide powder in the mixed powder is 5-30 mass %. Also provided is an insulating material in which the above-mentioned insulating filler is contained in a resin molded body.

LTCC devices are produced from dielectric compositions include a mixture of precursor materials that, upon firing, forms a dielectric material having a magnesium-silicon oxide host. An associated Ag system for LTCC conductors is also described.

LTCC devices are produced from dielectric compositions include a mixture of precursor materials that, upon firing, forms a dielectric material having a magnesium-silicon oxide host. An associated Ag system for LTCC conductors is also described.

A method of manufacturing a flexible conductive wire, a flexible conductive wire, and a display device are provided. The method manufacturing the flexible conductive wire includes: forming a zinc oxide nano-monomer into a patterned substrate, coating a carboxylated silver/3,4-ethylenedioxythiophene: polystyrenesulfonic acid solution on the patterned substrate, and curing the patterned substrate and the carboxylated silver/3,4-ethylenedioxythiophene: polystyrenesulfonic acid solution to form a flexible conductive wire. Display performance of a display panel can be improved.