The present invention discloses a multiphase ceramic material with a giant dielectric constant, wherein the multiphase ceramic material has a general formula of A.sub.xB.sub.nxTi.sub.1−(n+1)xO.sub.2; wherein A is at least one selected from the group consisting of Nb, Ta, V, Mo, and Sb, B is at least one selected from the group consisting of In, Ga, Al, Co, Cr, Sc, Fe (III), and a trivalent rare-earth cation; n is a molar ratio of B to A, 1<n≤5 , 0<x≤0.1. The multiphase ceramic material possesses outstanding properties including a giant dielectric constant, a low dielectric loss, and excellent frequency- and temperature-stability. In particular, it exhibits a high insulation resistivity of higher than 10.sup.11 Ω.Math.cm and a high breakdown voltage, which implies it can be applied in high-energy storage devices and supercapacitors. This invention also provides a method to synthesize the multiphase ceramic material.

The present invention discloses a multiphase ceramic material with a giant dielectric constant, wherein the multiphase ceramic material has a general formula of A.sub.xB.sub.nxTi.sub.1−(n+1)xO.sub.2; wherein A is at least one selected from the group consisting of Nb, Ta, V, Mo, and Sb, B is at least one selected from the group consisting of In, Ga, Al, Co, Cr, Sc, Fe (III), and a trivalent rare-earth cation; n is a molar ratio of B to A, 1<n≤5 , 0<x≤0.1. The multiphase ceramic material possesses outstanding properties including a giant dielectric constant, a low dielectric loss, and excellent frequency- and temperature-stability. In particular, it exhibits a high insulation resistivity of higher than 10.sup.11 Ω.Math.cm and a high breakdown voltage, which implies it can be applied in high-energy storage devices and supercapacitors. This invention also provides a method to synthesize the multiphase ceramic material.

The preset invention relates to dielectric material, and device, and memory device comprising the same. According to an aspect, provided is a dielectric material having a composition represented by Formula 1: <Formula 1> (100-x-y)BaTiO.sub.3.xBiREO.sub.3.yABO.sub.3. wherein, in Formula 1, RE is a rare earth metal, A is an alkali metal, B is a pentavalent transition metal, and 0<x<50, 0<y<50, and 0<x+y<50 are satisfied.

The preset invention relates to dielectric material, and device, and memory device comprising the same. According to an aspect, provided is a dielectric material having a composition represented by Formula 1: <Formula 1> (100-x-y)BaTiO.sub.3.xBiREO.sub.3.yABO.sub.3. wherein, in Formula 1, RE is a rare earth metal, A is an alkali metal, B is a pentavalent transition metal, and 0<x<50, 0<y<50, and 0<x+y<50 are satisfied.

Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient, making them advantageous for applications that experience temperature changes and gradients. In particular, tantalum can be substituted into the crystal structure to improve properties. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.

Disclosed are embodiments of tungsten bronze crystal structures that can have both a high dielectric constant and low temperature coefficient, making them advantageous for applications that experience temperature changes and gradients. In particular, tantalum can be substituted into the crystal structure to improve properties. Embodiments of the material can be useful for radiofrequency applications such as resonators and antennas.

Various embodiments include a method for producing a ceramic insulator for a high-voltage or medium-voltage switching system comprising: attaching a base material for an equipotential layer between two axially symmetrical ceramic structural elements; disposing the electrically conductive equipotential layer between the two ceramic structural elements; and joining the two ceramic structural elements to form a unitary body along a symmetry axis of a first of the two elements.

Various embodiments include a method for producing a ceramic insulator for a high-voltage or medium-voltage switching system comprising: attaching a base material for an equipotential layer between two axially symmetrical ceramic structural elements; disposing the electrically conductive equipotential layer between the two ceramic structural elements; and joining the two ceramic structural elements to form a unitary body along a symmetry axis of a first of the two elements.

The glass ceramic material of the present disclosure contains a glass that contains SiO.sub.2, B.sub.2O.sub.3, Al.sub.2O.sub.3, and M.sub.2O, where M is an alkali metal, and a filler that contains quartz, Al.sub.2O.sub.3, and ZrO.sub.2. The glass ceramic material contains the glass in an amount of 57.4% by weight or more and 67.4% by weight or less, the quartz in the filler in an amount of 29% by weight or more and 39% by weight or less, the Al.sub.2O.sub.3 in the filler in an amount of 1.8% by weight or more and 5% by weight or less, and the ZrO.sub.2 in the filler in an amount of 0.3% by weight or more and 1.8% by weight or less.

A dielectric ceramic composition that contains an oxide of A, R, and B and an oxide of Mn. The A is at least one selected from the group consisting of K and Na. The R is at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc. The B is at least one selected from the group consisting of Nb and Ta. The molar ratio of the A:R:B:Mn is 2−x:1+x/3:5+y:z. The x, y, and z satisfy −0.3≤x≤0.6, −0.5≤y≤0.5, and 0.001≤z≤0.5, respectively.