An electronic component that has fewer cracks during production is provided. The electronic component includes an outer electrode on a multilayer body, which includes an inner glass layer, a magnetic material layer on top and bottom surfaces of the inner glass layer, and an outer glass layer on top and bottom surfaces of the magnetic material layer. The insulating layers of the inner glass layer and the outer glass layers contain a dielectric glass material that contains a glass material containing at least K, B, and Si, quartz, and alumina. The glass material content of each insulating layer of the inner glass layer ranges from approximately 60%-65% by weight, the quartz content of each insulating layer of the inner glass layer ranges from approximately 34%-37% by weight, and the alumina content of each insulating layer of the inner glass layer ranges from approximately 0.5%-4% by weight.

An electronic component that has fewer cracks during production is provided. The electronic component includes an outer electrode on a multilayer body, which includes an inner glass layer, a magnetic material layer on top and bottom surfaces of the inner glass layer, and an outer glass layer on top and bottom surfaces of the magnetic material layer. The insulating layers of the inner glass layer and the outer glass layers contain a dielectric glass material that contains a glass material containing at least K, B, and Si, quartz, and alumina. The glass material content of each insulating layer of the inner glass layer ranges from approximately 60%-65% by weight, the quartz content of each insulating layer of the inner glass layer ranges from approximately 34%-37% by weight, and the alumina content of each insulating layer of the inner glass layer ranges from approximately 0.5%-4% by weight.

The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiTa.sub.2O.sub.6-based microwave dielectric ceramic material co-sintered at low temperature and its preparation method. Based on the low melting point characteristics of CuO and B.sub.2O.sub.3, and the radius of Cu.sup.2+ ions is similar to that of Ni.sup.2+ and Ta.sup.5+ ions, the chemical general formula of the invention is designed as xCuO-(1-x)NiO-[7.42y+(xy/14.33)]B.sub.2O.sub.3—Ta.sub.2O.sub.5, and the molar content of each component is adjusted from raw materials. The main crystalline phase of NiTa.sub.2O.sub.6 is synthesized at a lower pre-sintering temperature, and NiTa.sub.2O.sub.6-based ceramic material with low-temperature sintering characteristics and excellent microwave dielectric properties are directly synthesized at one time, which broadened the application range in LTCC field.

A thin-film structure and a semiconductor device including the same are provided. The thin-film structure includes: a base layer; and a dielectric layer on the base layer, the dielectric layer including crystals including a <11x> (0≤x≤1) crystal orientation in an out-of-plane direction of the base layer and having an orthorhombic crystal structure of an oIV phase (space group: Pmn21).

A thin-film structure and a semiconductor device including the same are provided. The thin-film structure includes: a base layer; and a dielectric layer on the base layer, the dielectric layer including crystals including a <11x> (0≤x≤1) crystal orientation in an out-of-plane direction of the base layer and having an orthorhombic crystal structure of an oIV phase (space group: Pmn21).

A glass ceramic that contains a glass containing Si, B, Al, and Zn and aggregates. The glass has a SiO.sub.2 content of 20% by weight to 55% by weight, a B.sub.2O.sub.3 content of 15% by weight to 30% by weight, Al.sub.2O.sub.3, and ZnO, wherein a weight ratio of the SiO.sub.2 to the B.sub.2O.sub.3 (SiO.sub.2/B.sub.2O.sub.3) is 1.21 or higher, and a weight ratio of the Al.sub.2O.sub.3 to the ZnO (Al.sub.2O.sub.3/ZnO) is 0.8 to 1.3. A TiO.sub.2 content, a ZrO.sub.2 content, a SnO.sub.2 content, and a Sr0 content in the glass each are 0% by weight to 5% by weight. The aggregates include 20% by weight to 50% by weight of SiO.sub.2, 1% by weight to 10% by weight of TiO.sub.2, 3% by weight or less of ZrO.sub.2, and 1% by weight or less of ZnO each relative to the weight of the glass ceramic.

A cable, in particular a power and/or telecommunication cable, has at least one elongated electrically conductive element, and at least one fire-resistant layer surrounding said elongated electrically conductive element. The fire-resistant layer is a ceramic layer in direct physical contact with the elongated electrically conductive element.

The present application discloses and claims a method to make a flexible ceramic fibers (Flexiramics™) and polymer composites. The resulting composite has an improved mechanical strength (tensile) when compared with the Flexiramics™ respective the nanofibers alone. Additionally a composite has better properties than the polymer alone such as lower fire retardancy, higher thermal conductivity and lower thermal expansion. Several different polymers can be used, both thermosets and thermoplastics. Flexiramics™ has unique physical characteristic and the composite materials can be used for numerous industrial and laboratory applications.

The present application discloses and claims a method to make a flexible ceramic fibers (Flexiramics™) and polymer composites. The resulting composite has an improved mechanical strength (tensile) when compared with the Flexiramics™ respective the nanofibers alone. Additionally a composite has better properties than the polymer alone such as lower fire retardancy, higher thermal conductivity and lower thermal expansion. Several different polymers can be used, both thermosets and thermoplastics. Flexiramics™ has unique physical characteristic and the composite materials can be used for numerous industrial and laboratory applications.

Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:
xAB.sub.3.(1−x)(Bi.sub.aNa.sub.b)TiO.sub.3  [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1<x<0.5, 0<a<1, 0<b<1, and a+b=1.