A component body is obtained by alternately laminating and sintering a plurality of semiconductor ceramic layers formed of a SrTiO.sub.3-based grain boundary insulated semiconductor ceramic and a plurality of internal electrode layers. The average grain diameter of crystal grains is 1.0 ∝m or less and a coefficient of variation representing variations in a grain diameter of the crystal grains is 30% or less. To prepare the semiconductor ceramic an Sr compound, a Ti compound and a donor compound are weighed in predetermined amounts and mixed/pulverized. A calcined powder is prepared and a dispersant is added with an acceptor compound to the calcined powder. The resulting mixture is wet-mixed and a heat-treated powder is prepared. The heat-treated powder is formed into slurry and subjected to a filter treatment. The filtered slurry is used to prepare a semiconductor ceramic. The resulting laminated semiconductor ceramic capacitor has a varistor function having excellent durability, which can suppress a reduction of insulating properties and ensure desired electrical characteristics even when ESD occurs repeatedly.

A component body is obtained by alternately laminating and sintering a plurality of semiconductor ceramic layers formed of a SrTiO.sub.3-based grain boundary insulated semiconductor ceramic and a plurality of internal electrode layers. The average grain diameter of crystal grains is 1.0 ∝m or less and a coefficient of variation representing variations in a grain diameter of the crystal grains is 30% or less. To prepare the semiconductor ceramic an Sr compound, a Ti compound and a donor compound are weighed in predetermined amounts and mixed/pulverized. A calcined powder is prepared and a dispersant is added with an acceptor compound to the calcined powder. The resulting mixture is wet-mixed and a heat-treated powder is prepared. The heat-treated powder is formed into slurry and subjected to a filter treatment. The filtered slurry is used to prepare a semiconductor ceramic. The resulting laminated semiconductor ceramic capacitor has a varistor function having excellent durability, which can suppress a reduction of insulating properties and ensure desired electrical characteristics even when ESD occurs repeatedly.

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly (benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly (benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Method for preparing a ceramic-polymer nanocomposite is provided. The method includes providing a polymer comprising radicals on a surface thereof; contacting the polymer with a functionalizing agent to form a functionalized polymer; and either (i) grafting a cross-linking agent onto the functionalized polymer to form a graft copolymer, and attaching ceramic nanostructures to the graft copolymer to form a ceramic-polymer nanocomposite, or (ii) grafting a cross-linking agent onto ceramic nanostructures to form modified ceramic nanostructures, and attaching the modified ceramic nanostructures to the functionalized polymer to form a ceramic-polymer nanocomposite. A ceramic-polymer nanocomposite and use of the ceramic-polymer nanocomposite are also provided.

A Li.sub.3Mg.sub.2SbO.sub.6-based microwave dielectric ceramic material easy to sinter and with high Q value, and a preparation method thereof are disclosed. A chemical formula of the material is Li.sub.3(Mg.sub.1-xZn.sub.x).sub.2SbO.sub.6, wherein 0.02≤x≤0.08. The preparation method includes: 1) mixing and ball-milling Sb.sub.2O.sub.3 and Li.sub.2CO.sub.3 according to a chemical ratio and then drying, and conducting pre-sintering to obtain a Li.sub.3SbO.sub.4 phase; and 2) mixing and ball-milling MgO, ZnO and Li.sub.3SbO.sub.4 powder according a chemical ratio of Li.sub.3(Mg.sub.1-xZn.sub.x).sub.2SbO.sub.6 and then drying, conducting granulation and sieving after adding an adhesive, pressing into a cylindrical body, and sintering the cylindrical body into ceramic in the air at 1325° C. and under normal pressure, wherein a dielectric constant is 7.2-8.5, a quality factor is 51844-97719 GHz, and a temperature coefficient of resonance frequency is −14-1 ppm/° C.

A Li.sub.3Mg.sub.2SbO.sub.6-based microwave dielectric ceramic material easy to sinter and with high Q value, and a preparation method thereof are disclosed. A chemical formula of the material is Li.sub.3(Mg.sub.1-xZn.sub.x).sub.2SbO.sub.6, wherein 0.02≤x≤0.08. The preparation method includes: 1) mixing and ball-milling Sb.sub.2O.sub.3 and Li.sub.2CO.sub.3 according to a chemical ratio and then drying, and conducting pre-sintering to obtain a Li.sub.3SbO.sub.4 phase; and 2) mixing and ball-milling MgO, ZnO and Li.sub.3SbO.sub.4 powder according a chemical ratio of Li.sub.3(Mg.sub.1-xZn.sub.x).sub.2SbO.sub.6 and then drying, conducting granulation and sieving after adding an adhesive, pressing into a cylindrical body, and sintering the cylindrical body into ceramic in the air at 1325° C. and under normal pressure, wherein a dielectric constant is 7.2-8.5, a quality factor is 51844-97719 GHz, and a temperature coefficient of resonance frequency is −14-1 ppm/° C.

The present technology provides an electrical insulating material comprising a plurality of insulating dielectric layers and a thermally conductive layer disposed between adjacent dielectric layers, the thermally conductive layer comprising a thermally conductive filler. Additionally, the present technology also provides a method of manufacturing the electrical insulating material. The present technology also provides an electrically conductive apparatus comprising an electrically conductive material and an electrical insulating material disposed about the conductive material, the electrical insulating material comprising a first dielectric layer, a second dielectric layer overlying the first dielectric layer, and a thermally conductive layer disposed between the first and second dielectric layers, the thermally conductive layer comprising a thermally conductive filler, e.g., born nitride.

Disclosed are embodiments of making a barium magnesium tantalate. The method can include providing barium magnesium tantalate and incorporating one of Ba.sub.2MgWO.sub.6, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.2MgWO.sub.6, Ba.sub.3LaTa.sub.3O.sub.12, Ba.sub.8LiTa.sub.5WO.sub.24, BaLaLiWO.sub.6, Ba.sub.4Ta.sub.2WO.sub.12, Ba.sub.2La.sub.2MgW.sub.2O.sub.12, BaLaLiWO.sub.6, Sr.sub.3LaTa.sub.3O.sub.12, and SrLaTaO.sub.12 into the barium magnesium tantalate to form a solid solution having a high Q value.

Disclosed are embodiments of making a barium magnesium tantalate. The method can include providing barium magnesium tantalate and incorporating one of Ba.sub.2MgWO.sub.6, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.2MgWO.sub.6, Ba.sub.3LaTa.sub.3O.sub.12, Ba.sub.8LiTa.sub.5WO.sub.24, BaLaLiWO.sub.6, Ba.sub.4Ta.sub.2WO.sub.12, Ba.sub.2La.sub.2MgW.sub.2O.sub.12, BaLaLiWO.sub.6, Sr.sub.3LaTa.sub.3O.sub.12, and SrLaTaO.sub.12 into the barium magnesium tantalate to form a solid solution having a high Q value.