An epoxy-based resin system composition includes a latent functionality for polymer adhesion improvement. The composition may be used to produce an overcoat layer and/or protection layer in an anti-sulfur resistor (ASR). In some embodiments, the composition include epoxy-based resin(s), hardener(s) and, optionally, blowing agent(s) and/or filler(s). An epoxide functionality of one or more of the epoxy-based resin(s) and a reactive functionality of one or more of the hardener(s) react with each other at a first temperature. The latent functionality, which does not react at the first temperature, is contained in at least one of the epoxy-based resin(s), hardener(s) and filler(s) and reacts in response to another stimulus (e.g., UV light/initiator and/or a second temperature greater than the first temperature) to enhance chemical bonding. Optionally, voids created via etching and/or the blowing agent(s) may be used to enhance mechanical bonding, alone, or in combination with filler(s) exposed in the voids.

An object is to provide a chip resistor capable of coping with high power. A chip resistor of the present disclosure includes insulating substrate, a pair of electrodes, and resistance member. A pair of electrodes are provided at both ends of the upper face of insulating substrate. Resistance member is provided on insulating substrate and connected to the pair of electrodes. Insulating substrate has first region in the center thereof and second regions at both ends of first region. Recess is provided in first region of insulating substrate. Resistance member formed in first region has a meandering shape in a top view. At least a part of resistance member is embedded in recess. Trimming groove is provided in resistance member formed in second region.

An object is to provide a chip resistor capable of coping with high power. A chip resistor of the present disclosure includes insulating substrate, a pair of electrodes, and resistance member. A pair of electrodes are provided at both ends of the upper face of insulating substrate. Resistance member is provided on insulating substrate and connected to the pair of electrodes. Insulating substrate has first region in the center thereof and second regions at both ends of first region. Recess is provided in first region of insulating substrate. Resistance member formed in first region has a meandering shape in a top view. At least a part of resistance member is embedded in recess. Trimming groove is provided in resistance member formed in second region.

Resistors and a method of manufacturing resistors are described herein. A resistor includes a resistive element and a plurality of conductive elements. The plurality of conductive elements are electrically insulated from one another via a dielectric material and thermally coupled to the resistive element via an adhesive material disposed between each of the plurality of conductive elements and a surface of the resistive element. The plurality of conductive elements is coupled to the resistive element via conductive layers and solderable layers.

Resistors and a method of manufacturing resistors are described herein. A resistor includes a resistive element and a plurality of conductive elements. The plurality of conductive elements are electrically insulated from one another via a dielectric material and thermally coupled to the resistive element via an adhesive material disposed between each of the plurality of conductive elements and a surface of the resistive element. The plurality of conductive elements is coupled to the resistive element via conductive layers and solderable layers.

To provide a chip resistor in which a resistive element can be surely protected from an external environment and which is also excellent in corrosion resistance, a chip resistor 1 is configured to include an insulating substrate 2, a pair of front electrode 3 provided on opposite end portions of a front surface of the insulating substrate 2, a pair of back electrodes 7 provided on opposite end portions of a back surface of the insulating substrate 2, a resistive element 4 provided to extend onto the two front electrodes 3, a first insulating layer 5 covering the resistive element 4, a second insulating layer 6 made of a resin material to cover the first insulating layer 5, end surface electrodes 8 establishing electrical continuity between the front electrodes 3 and the back electrodes 7, plating layers 9 covering the end surface electrodes 8, etc. Rough surface portions 6a made rougher in surface roughness than any other portion of the second insulating layer 6 are formed at opposite end portions of the second insulating layer 6. End portions of the end surface electrodes 8 and the plating layers 9 are brought into tight contact with the rough surface portions 6a respectively.

A chip component 10 comprises: an insulating substrate 1 on which a resistor 3 serving as a functional element is formed; a pair of internal electrodes (front electrodes 2, end surface electrodes 6, and back electrodes 5) that is formed to cover both end portions of the insulating substrate 1 and connected to the resistor 3; a barrier layer 8 that is formed on a surface of each of the internal electrodes and mainly composed of nickel; and an external connection layer 9 that is formed on a surface of the barrier layer 8 and mainly composed of tin, and the barrier layer 8 is composed of alloy plating (NiP) including nickel and phosphorus, which is formed by electrolytic plating, and a content rate of phosphorus in the alloy plating of an inner region is made different from that of an outer region so that at least the inner region of the barrier layer 8 has magnetic properties.

A chip component 10 comprises: an insulating substrate 1 on which a resistor 3 serving as a functional element is formed; a pair of internal electrodes (front electrodes 2, end surface electrodes 6, and back electrodes 5) that is formed to cover both end portions of the insulating substrate 1 and connected to the resistor 3; a barrier layer 8 that is formed on a surface of each of the internal electrodes and mainly composed of nickel; and an external connection layer 9 that is formed on a surface of the barrier layer 8 and mainly composed of tin, and the barrier layer 8 is composed of alloy plating (NiP) including nickel and phosphorus, which is formed by electrolytic plating, and a content rate of phosphorus in the alloy plating of an inner region is made different from that of an outer region so that at least the inner region of the barrier layer 8 has magnetic properties.

A frequency-dependent resistance element includes an element assembly composed of a sintered magnetic material and a coil conductor embedded in the element assembly. The sintered magnetic material is composed of a primary component containing Fe, Zn, Ni, and Cu and a secondary component containing Co. In the primary component, on a percent by mole basis, the Fe content is 46.79 to 47.69, the Zn content is 12.60 to 24.84, and the Ni content is 19.21 to 32.36 in terms of Fe.sub.2O.sub.3, ZnO, and NiO, respectively. The molar ratio (Ni:Zn) of Ni to Zn is (1X):X, where X is from about 0.28 to about 0.56. The content of Co in terms of Co.sub.3O.sub.4 is 1.0 to 10.0 parts by mass relative to 100 parts by mass of the primary component containing Fe, Zn, Ni, and Cu in terms of Fe.sub.2O.sub.3, ZnO, NiO, and CuO, respectively.

A frequency-dependent resistance element includes an element assembly composed of a sintered magnetic material and a coil conductor embedded in the element assembly. The sintered magnetic material is composed of a primary component containing Fe, Zn, Ni, and Cu and a secondary component containing Co. In the primary component, on a percent by mole basis, the Fe content is 46.79 to 47.69, the Zn content is 12.60 to 24.84, and the Ni content is 19.21 to 32.36 in terms of Fe.sub.2O.sub.3, ZnO, and NiO, respectively. The molar ratio (Ni:Zn) of Ni to Zn is (1X):X, where X is from about 0.28 to about 0.56. The content of Co in terms of Co.sub.3O.sub.4 is 1.0 to 10.0 parts by mass relative to 100 parts by mass of the primary component containing Fe, Zn, Ni, and Cu in terms of Fe.sub.2O.sub.3, ZnO, NiO, and CuO, respectively.