A current detection device (30) includes a resistance element (5), and a pair of electrodes (6, 7). The current detection device (30) has a projecting portion (11). The projecting portion (11) has a portion of the resistance element (5) and portions of the pair of electrodes (6, 7). The electrodes (6, 7) have first wall portions (66b, 67b) forming a portion of the projecting portion (11), and second wall portions (66a, 67a) forming the portion of the projecting portion (11). The electrodes (6, 7) have detection areas (66, 67) demarcated by the first wall portion (66b, 67b), the second wall portion (66a, 67a), a leading end portion (66c, 67c), and a contact surface (6a, 7a). The electrodes (6, 7) have voltage detecting portions (20, 21). The voltage detecting portions (20, 21) are arranged in the detection areas (66, 67) with a gap between the leading end portions (66c, 67c).

A multilayer varistor includes a sintered body, an internal electrode disposed in the sintered body, a high-resistance layer covering at least part of the sintered body, and an external electrode covering part of the high-resistance layer, the external electrode being electrically connected to the internal electrode. An arithmetic mean roughness of a surface of the high-resistance layer is greater than or equal to 0.06 μm.

A multilayer varistor includes a sintered body, an internal electrode disposed in the sintered body, a high-resistance layer covering at least part of the sintered body, and an external electrode covering part of the high-resistance layer, the external electrode being electrically connected to the internal electrode. An arithmetic mean roughness of a surface of the high-resistance layer is greater than or equal to 0.06 μm.

It is aimed to provide a laminated varistor capable of reducing stray capacitance to occur between an internal electrode and an external electrode, and also capable of reducing a variation in the stray capacitance due to a variation in the external electrode. A laminated varistor of the present disclosure has external electrodes on first end surface, second end surface, and first side surface of sintered body. No external electrode is provided on second side surface opposite to first side surface. Varistor regions in which internal electrodes overlap each other in a laminating direction are provided at positions closer to second side surface than to first side surface.

A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment the multilayer component includes a ceramic main element being a varistor ceramic and at least one metal structure, wherein the metal structure is cosintered, and wherein the main element is doped with a material of the metal structure in such a way that a diffusion of the material from the metal structure into the main element during a sintering operation is reduced.

A chip ceramic semiconductor electronic component includes a ceramic body including a ceramic semiconductor, and a first surface and a second surface in contact with the first surface, the first outer electrode on the first surface of the ceramic body, and the second outer electrode covering the first outer electrode and extending onto the second surface of the ceramic body, in which an area of a first surface of the first outer electrode is less than about 0.17 mm.sup.2, and a hard particle made of a material harder than the first outer electrode is at the interface between the first and second outer electrodes.

A chip ceramic semiconductor electronic component includes a ceramic body including a ceramic semiconductor, and a first surface and a second surface in contact with the first surface, the first outer electrode on the first surface of the ceramic body, and the second outer electrode covering the first outer electrode and extending onto the second surface of the ceramic body, in which an area of a first surface of the first outer electrode is less than about 0.17 mm.sup.2, and a hard particle made of a material harder than the first outer electrode is at the interface between the first and second outer electrodes.

A sintered body has a first end face and a second end face opposite to each other in a first direction and a first side face and a second side face opposite to each other in a second direction. A first end face electrode is disposed on the first end face except for end portions of the first end face in the second direction. A second end face electrode is disposed on the second end face except for end portions of the second end face in the second direction. A first side face electrode is disposed on the first side face except for end portions of the first side face in the first direction. A second side face electrode is disposed on the second side face except for end portions of the second side face in the first direction.

A sintered body has a first end face and a second end face opposite to each other in a first direction and a first side face and a second side face opposite to each other in a second direction. A first end face electrode is disposed on the first end face except for end portions of the first end face in the second direction. A second end face electrode is disposed on the second end face except for end portions of the second end face in the second direction. A first side face electrode is disposed on the first side face except for end portions of the first side face in the first direction. A second side face electrode is disposed on the second side face except for end portions of the second side face in the first direction.

A multilayer varistor includes: a sintered compact; an internal electrode provided inside the sintered compact; a high-resistivity layer arranged to cover the sintered compact at least partially and containing element Si; and an external electrode arranged to cover the high-resistivity layer partially, electrically connected to the internal electrode, and containing silver as a main component thereof. A ratio of a total mass of the alkali metals and the alkaline earth metals to a mass of the element Si in a surface region of the high-resistivity layer is equal to or less than 0.6.