A vibrator device includes an intermediate substrate that includes a frame having a first surface and a second surface opposite to the first surface and a vibration element and is formed of quartz crystal, a first substrate that is bonded to the first surface of the frame and is formed of the quartz crystal or glass, a second substrate that is bonded to the second surface of the frame and is formed of the quartz crystal or the glass, and a functional element that is disposed on the first substrate and includes a functional layer, in which the functional element includes a portion overlapping the vibration element in plan view.

Provided are a thermistor which can have a satisfactory thermistor film using a metal substrate as well as a high humidity resistance and heat resistance; a method for producing the same; and a thermistor sensor. The thermistor according to the present invention includes a metal substrate 2, an insulating base film 3 formed on the metal substrate, and a thermistor film 4 formed on the insulating base film, wherein the insulating base film is formed so as to fill the irregularities on the surface of the metal substrate where the surface roughness of the insulating base film is lower than that of the metal substrate. In the method for producing this thermistor includes the steps of: applying polysilazane on the metal substrate; drying the polysilazane to form the insulating base film of SiO.sub.x containing nitrogen; and depositing the thermistor film on the insulating base film.

A thermistor element includes an element body made of ceramic and including first and second end surfaces opposite to each other and a peripheral surface located between the first end surface and the second end surface, first and second external electrodes respectively covering the first and second end surfaces and portion of the peripheral surface adjacent to the respective first and second end surfaces. The first and second external electrodes include electrode layers including an underlayer and a metal plating layer, the underlayer of the first external electrode includes, adjacent to or in a vicinity of the second external electrode, two second external electrode side corner portions that are thin and adjacent to each other, and the underlayer of the second external electrode includes, adjacent to or in a vicinity of the first external electrode, two first external electrode side corner portions that are thin and adjacent to each other.

Under predetermined film depositing conditions, the raw material solution of the thermistor film is atomized or dropletized, the carrier gas is supplied to the obtained mist or droplet, the mist or droplet is conveyed to the substrate, and then the mist or droplet is thermally reacted on the substrate to deposit a film. A resultant thermistor thin film has a film thickness of 1 m or less, a film width of 5 mm or more, a thickness of 50 nm or more and 5 m or less, a thickness in the range of less than 50 nm, a thickness of 5 mm or less, and/or a thickness of 50 nm or more and 5 m or less, and has a film surface roughness (Ra) of 0.1 m or less.

An electrical component for embedding into a carrier comprises a ceramic main body, an electrically insulating passivation layer which is applied to the main body, and at least one inner electrode. In addition, the electrical component comprises an outer electrode which is connected to the inner electrode, wherein the outer electrode comprises a first electrode layer comprising a metal and a second electrode layer which is arranged on the latter and comprises copper.

An electronic component includes an element body, a thin film layer disposed to cover a pair of end surfaces and four side surfaces, a first external electrode and a second external electrode, and internal conductors, wherein each of the first external electrode and the second external electrode has first electrode layers disposed on the thin film layer and electrically connected to the internal conductors, and second electrode layers disposed to cover the first electrode layers, and a thermal conductivity of the second electrode layers is lower than a thermal conductivity of the first electrode layers.

A composite thermistor chip includes a thermosensitive ceramic chip, a metal electrode and a glass glaze resistor, wherein the thermosensitive ceramic chip has a front side and a back side, the metal electrode includes a first terminal electrode, a second terminal electrode and a third electrode layer; the first terminal electrode and the second terminal electrode are respectively arranged at two ends of the front side of the thermosensitive ceramic chip, and the glass glaze resistor is arranged on the front side of the thermosensitive ceramic chip, two ends of the glass glaze resistor are respectively connected to the first terminal electrode and the second terminal electrode; and the back side of the thermosensitive ceramic chip is covered with the third electrode layer.

An electronic component is disclosed. In an embodiment, an electronic component includes at least one NTC element and at least two electrically conductive contact elements, wherein the NTC element is electrically conductively connected to a respective contact element via a connection material, and wherein a coefficient of thermal expansion of the contact elements is adapted to a coefficient thermal expansion of the NTC element.

A composite thermistor chip includes a thermosensitive ceramic chip, a metal electrode and a glass glaze resistor, wherein the thermosensitive ceramic chip has a front side and a back side, the metal electrode includes a first terminal electrode, a second terminal electrode and a third electrode layer; the first terminal electrode and the second terminal electrode are respectively arranged at two ends of the front side of the thermosensitive ceramic chip, and the glass glaze resistor is arranged on the front side of the thermosensitive ceramic chip, two ends of the glass glaze resistor are respectively connected to the first terminal electrode and the second terminal electrode; and the back side of the thermosensitive ceramic chip is covered with the third electrode layer.

An electronic component includes an element body, a thin film layer disposed to cover a pair of end surfaces and four side surfaces, a first external electrode and a second external electrode, and internal conductors, wherein each of the first external electrode and the second external electrode has first electrode layers disposed on the thin film layer and electrically connected to the internal conductors, and second electrode layers disposed to cover the first electrode layers, and a thermal conductivity of the second electrode layers is lower than a thermal conductivity of the first electrode layers.