A flat spring (100) is disclosed, for use in a surge protection device (SPD) such as a fast activation thermal fuse, to be integrated with a thermal metal oxide varistor (TMOV). The flat spring (100) has a V-shaped protrusion (110) to enable ultra-high short circuit current protection under overvoltage condition.

A metal oxide varistor (MOV) device including a MOV chip, electrically conductive first and second electrodes disposed on opposite sides of the MOV chip, and electrically conductive first and second leads connected to the first and second electrodes, respectively, wherein the first and second electrodes are formed of a material having a melting point greater than 1100 degrees Celsius.

A varistor includes a sintered body, an internal electrode, an insulating layer, and an external electrode. The internal electrode is disposed in an interior of the sintered body. The insulating layer covers at least part of the sintered body and includes Zn.sub.2SiO.sub.4. The external electrode is electrically connected to the internal electrode, covers part of the sintered body and part of the insulating layer, and is in contact with the part of the insulating layer. The insulating layer has a region being in contact with the external electrode, the region having a greater average thickness than a region of the insulating layer which is out of contact with the external electrode.

A varistor includes a sintered body, an internal electrode, an insulating layer, and an external electrode. The internal electrode is disposed in an interior of the sintered body. The insulating layer covers at least part of the sintered body and includes Zn.sub.2SiO.sub.4. The external electrode is electrically connected to the internal electrode, covers part of the sintered body and part of the insulating layer, and is in contact with the part of the insulating layer. The insulating layer has a region being in contact with the external electrode, the region having a greater average thickness than a region of the insulating layer which is out of contact with the external electrode.

A terminal connecting structure is provided with each of the electrodes provided on the element forming the electronic component; and the terminals respectively having the connecting portions arranged along the electrodes respectively. In addition, the terminal connecting structure is provided with clearance forming portions configured to respectively form the respective clearances between the electrodes and the connecting portions respectively; and the connecting materials respectively provided in the clearances, the connecting material being configured to electrically connect the connecting portions and the electrodes respectively.

An electrode with multiple metallic-layers structure formed by a magnetron sputtering technique for a semiconductor device and method for producing same is disclosed. The ceramic device includes at least one from selected group consisting of ZnO-MOV (metal oxide varistors), BaTiO3-PTC (positive temperature coefficient) thermistors, Mn3O4-NTC (negative temperature coefficient) thermistors, and capacitors. The multiple metallic-layers include a sputtered buffer layer and a sputtered electrical contact layer. The buffer layer includes at least one alloy selected form group consisting of NiCr (Ni from 50-90 wt %), TiNi (Ti from 40-60 wt %), and AlNi (Al from 40-70 wt %) and the thickness of this layer is from greater than zero to less than 100 nm. The electrical contact layer includes at least one of Cu, Ag, Pt, Au, or combination. More specifically, the electrode includes one of NiCr/Cu system, NiCr/Ag system, NiCr/Cu/Ag system, TiNi/Cu/Ag system, or AlNi/Cu/Ag system. The thickness ratio of the electrical contact layer to the intermetallic barrier layer is from 1 to 4.

The present invention relates to a polymer voltage-dependent resistor (PVDR) in various physical forms and methods for manufacturing the varistor. The body of the PVDR is composed of a polymer matrix having a filler composed of doped zinc oxide particles, other semi conductive particles or metal particles uniformly distributed therein. Conductive electrodes may be affixed to the polymer matrix and electrical leads attached to the electrodes.

A multilayer varistor includes a sintered body, an internal electrode disposed in the sintered body, a high-resistance layer covering at least part of the sintered body, and an external electrode covering part of the high-resistance layer, the external electrode being electrically connected to the internal electrode. An arithmetic mean roughness of a surface of the high-resistance layer is greater than or equal to 0.06 μm.

A multilayer component and a mathod for producing a multilayer component are disclosed. In an embodiment the multilayer component includes a ceramic main element being a varistor ceramic and at least one metal structure, wherein the metal structure is cosintered, and wherein the main element is doped with a material of the metal structure in such a way that a diffusion of the material from the metal structure into the main element during a sintering operation is reduced.

A sintered body has a first end face and a second end face opposite to each other in a first direction and a first side face and a second side face opposite to each other in a second direction. A first end face electrode is disposed on the first end face except for end portions of the first end face in the second direction. A second end face electrode is disposed on the second end face except for end portions of the second end face in the second direction. A first side face electrode is disposed on the first side face except for end portions of the first side face in the first direction. A second side face electrode is disposed on the second side face except for end portions of the second side face in the first direction.