A thin film resistor formed using thermal spraying techniques in the manufacturing process is provided. A thin film resistor and method of manufacturing a thin film resistor are disclosed including a thermally sprayed resistive element. An alloy bond layer may be applied to a substrate and a thermally sprayed resistive layer is applied to the alloy bond layer by a thermal spraying process to form a thermally sprayed resistive element. The alloy bond layer and the thermally sprayed resistive layer may have the same chemical composition.

An NTC thin film thermistor that includes at least a first thin film electrode, at least an NTC thin film, and at least a second thin film electrode. A further aspect relates to a method for producing an NTC thin film thermistor.

An NTC thin film thermistor that includes at least a first thin film electrode, at least an NTC thin film, and at least a second thin film electrode. A further aspect relates to a method for producing an NTC thin film thermistor.

A method for forming a thin film resistor with improved thermal stability is disclosed. A substrate having thereon a first dielectric layer is provided. A resistive material layer is deposited on the first dielectric layer. A capping layer is deposited on the resistive material layer. The resistive material layer is then subjected to a thermal treatment at a pre-selected temperature higher than 350 degrees Celsius in a hydrogen or deuterium atmosphere. The capping layer and the resistive material layer are patterned to form a thin film resistor on the first dielectric layer.

A novel integrated circuit and method thereof are provided. The integrated circuit includes a plurality of first interconnect pads, a plurality of second interconnect pads, a first inter-level dielectric layer, a thin film resistor, and at least two end-caps. The end-caps, which are connectors for the thin film resistor, are positioned at the same level with the plurality of second interconnect pads. Therefore, an electrical connection between the end-caps and the plurality of second interconnect pads can be formed by directly connection of them. An integrated circuit with a thin film resistor can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.

A novel integrated circuit and method thereof are provided. The integrated circuit includes a plurality of first interconnect pads, a plurality of second interconnect pads, a first inter-level dielectric layer, a thin film resistor, and at least two end-caps. The end-caps, which are connectors for the thin film resistor, are positioned at the same level with the plurality of second interconnect pads. Therefore, an electrical connection between the end-caps and the plurality of second interconnect pads can be formed by directly connection of them. An integrated circuit with a thin film resistor can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.

A thin film resistor (TFR) module may be formed in copper interconnect in an integrated circuit device. A pair of displacement-plated TFR heads may be formed by forming a pair of copper TFR head elements (e.g., damascene trench elements) spaced apart from each other in a dielectric region, and displacement plating a barrier region on each TFR head element to form a displacement-plated TFR head. A TFR element may be formed on the pair of displacement-plated TFR heads to define a conductive path between the pair of TFR head elements through the TFR element and through the displacement-plated barrier region on each metal TFR head. Conductive contacts may be formed connected to the pair of displacement-plated TFR heads. The displacement-plated barrier regions may protect the copper TFR heads from copper corrosion and/or diffusion, and may comprise CoWP, CoWB, Pd, CoP, Ni, Co, Ni—Co alloy, or other suitable material.

A thin film resistor (TFR) module may be formed in copper interconnect in an integrated circuit device. A pair of displacement-plated TFR heads may be formed by forming a pair of copper TFR head elements (e.g., damascene trench elements) spaced apart from each other in a dielectric region, and displacement plating a barrier region on each TFR head element to form a displacement-plated TFR head. A TFR element may be formed on the pair of displacement-plated TFR heads to define a conductive path between the pair of TFR head elements through the TFR element and through the displacement-plated barrier region on each metal TFR head. Conductive contacts may be formed connected to the pair of displacement-plated TFR heads. The displacement-plated barrier regions may protect the copper TFR heads from copper corrosion and/or diffusion, and may comprise CoWP, CoWB, Pd, CoP, Ni, Co, Ni—Co alloy, or other suitable material.

The invention provides a method for adjusting the resistance value of a thin film resistor layer in a semiconductor structure, which comprises forming the thin film resistor layer, the material of the thin film resistor layer comprises titanium nitride, and the thin film resistor layer has an original resistance value, a mask layer with tensile force is formed above the thin film resistor layer, and the mask layer with tensile force changes a lattice size of the thin film resistor layer, so that the lattice size of the thin film resistor layer becomes larger and the original resistance value of the thin film resistor layer is reduced.

The invention provides a method for adjusting the resistance value of a thin film resistor layer in a semiconductor structure, which comprises forming the thin film resistor layer, the material of the thin film resistor layer comprises titanium nitride, and the thin film resistor layer has an original resistance value, a mask layer with tensile force is formed above the thin film resistor layer, and the mask layer with tensile force changes a lattice size of the thin film resistor layer, so that the lattice size of the thin film resistor layer becomes larger and the original resistance value of the thin film resistor layer is reduced.