A resistor element includes a base substrate having first and second surfaces opposing each other and first and second end surfaces opposing each other and connecting the first and second surfaces. A first resistor layer is on the first surface of the base substrate. First and second terminals are respectively on the first and second end surfaces. A second resistor layer is on the first resistor layer, is connected to the first and second terminals, and includes a copper-manganese-tin (CuMnSn)-based composition.

A resistor element includes a base substrate having first and second surfaces opposing each other and first and second end surfaces opposing each other and connecting the first and second surfaces. A first resistor layer is on the first surface of the base substrate. First and second terminals are respectively on the first and second end surfaces. A second resistor layer is on the first resistor layer, is connected to the first and second terminals, and includes a copper-manganese-tin (CuMnSn)-based composition.

An example method includes: (i) depositing an insulating layer on a substrate; (ii) forming a conductive polymer layer on the insulating layer; and (iii) repeating deposition of a respective insulating layer, and formation of a respective conductive polymer layer to form a multilayer stack of respective conductive polymer layers interposed between respective insulating layers. Each respective conductive polymer layer has a respective electrical resistance, such that when the respective conductive polymer layers are connected in parallel to a power source, a resultant electrical resistance of the respective conductive polymer layers is less than each respective electrical resistance.

A calibration system adapted to calibrate a resistance of an electrical device having a lead wire comprises a resistance detector adapted to detect the resistance of the electrical device, a first container containing an etching solution adapted to etch the lead wire, and a heater configured to heat the electrical device. If a first resistance of the electrical device detected by the resistance detector at a first temperature is within a first predetermined range, the electrical device is heated with the heater to a second temperature higher than the first temperature. A second resistance of the electrical device is detected by the resistance detector at the second temperature. If the second resistance is beyond a second predetermined range, the lead wire is etched by the etching solution to adjust the resistance of the electrical device until the second resistance at the second temperature is within the second predetermined range.

Methods and apparatus providing a vertically constructed, temperature sensing resistor are disclosed. An example apparatus includes a semiconductor substrate including a first doped region, a second doped region, and a third doped region between the first and second doped regions, the third doped region including a temperature sensitive semiconductor material; a first contact coupled to the first doped region; a second contact opposite the first contact coupled to the second doped region; and an isolation trench to circumscribe the third doped region.

A plasma etching method is performed by forming a desired pattern of a mask into a film including a zirconium oxide film by plasma etching with plasma generated from a first gas. The first gas consists of at least one chloride-containing gas of the group of boron trichloride, tetrachloromethane, chloride and silicon tetrachloride, at least one hydrogen-containing gas of the group of hydrogen bromide, hydrogen and methane, and a noble gas. An underlying film of a silicon oxide film or an amorphous carbon film is provided underneath the zirconium oxide film, and an etching selectivity of the zirconium oxide film to the underlying film is greater than or equal to one.

A chip resistor includes a board, first and second electrodes disposed on one surface of the board, and a resistor body electrically connecting the first and second electrodes to each other and including a copper-manganese-tin (CuMnSn) alloy. In the CuMnSn alloy, a percentage of Mn ranges from 11% to 20%, a percentage of Sn ranges from 2% to 8%, and a total percentage of Mn and Sn ranges from 13.5% to 22.5%.

There is provided a strain gauge having both reduced size and symmetry. The strain gauge includes at least four grid resistor connected to each other in series, and at least three trim resistors each connected to a series circuit in parallel, the series circuit being constituted by two grid resistors adjacent to each other (R.sub.1,R.sub.2; R.sub.2,R.sub.3; R.sub.3,R.sub.4) of the at least four grid resistors. The at least four grid resistors have resistance values different from one another.

There is provided a strain gauge having both reduced size and symmetry. The strain gauge includes at least four grid resistor connected to each other in series, and at least three trim resistors each connected to a series circuit in parallel, the series circuit being constituted by two grid resistors adjacent to each other (R.sub.1,R.sub.2; R.sub.2,R.sub.3; R.sub.3,R.sub.4) of the at least four grid resistors. The at least four grid resistors have resistance values different from one another.

In a manufacturing method for a thermistor element (3) including: a thermistor portion (49) which is a sintered body formed from a thermistor material; and a pair of electrode wires (25) which are embedded in the thermistor portion (49) and at least one end portion of each of the electrode wires projects at an outer side of the thermistor portion (49), the resistance value of the thermistor element (3) is adjusted by performing a removal processing of removing a part of the thermistor portion (49).