A sulfurization detection resistor makes it possible to detect a degree of sulfurization accurately and easily, and a manufacturing method for such sulfurization detection resistor. A sulfurization detection resistor includes an insulated substrate having a rectangular parallelepiped shape, a first front electrode and a second front electrode formed at both ends on a main surface of the insulated substrate, multiple sulfurization detecting conductors connected in parallel to the first front electrode, multiple resistive elements connected between the sulfurization detecting conductors and the second front electrode, and a protective film formed to partially cover the sulfurization detecting conductors and entirely cover the resistive elements. The sulfurization detecting conductors have their sulfurization detecting portions exposed out of the protective film, and different timings are set for these sulfurization detecting portions respectively to become disconnected depending on a cumulative amount of sulfurization.

The present invention provides an amplifier circuit, wherein the amplifier circuit includes an operational amplifier and a feedback path. The operational amplifier has an input terminal and an output terminal, and is arranged for receiving an input signal to generate an output signal. The feedback path is coupled between the input terminal and the output terminal of the operational amplifier, wherein the feedback path comprises at least two poly resistors, and a depletion region of at least one of the two poly resistors is biased by the output signal generated by the operational amplifier.

Provided is a resistor provided with a resistance body and electrodes provided on the resistance body, and the resistance body has an oxide film on a surface.

An electrical resistor element, system, and method related thereto, wherein the electrical resistor element includes a tunable resistance. The electrical resistor element comprises a first contact electrode, a second contact electrode and a ferroelectric layer arranged between the first contact electrode and the second contact electrode. The ferroelectric layer comprises a first area having a first polarization direction and a second area having a second polarization direction. The first polarization direction is different to the second polarization direction. The ferroelectric layer further comprises a domain wall between the first area and the second area. The electrical resistor element further comprises a first pinning element configured to stabilize the first polarization direction of the ferroelectric layer. The electrical resistor element further comprises a control circuit configured to tune the resistance of the electrical resistor element by applying electrical pulses to the ferroelectric layer such that the ferroelectric domain wall is moved.

The present application provides planar and stacked resistor structures that are embedded within an interconnect dielectric material in which the resistivity of an electrical conducting resistive material or electrical conducting resistive materials of the resistor structure can be tuned to a desired resistivity during the manufacturing of the resistor structure. Notably, a doped metallic insulator layer is formed atop a substrate. A controlled surface treatment process is then performed to an upper portion of the doped metallic insulator layer to convert the upper portion of the doped metallic insulator layer into an electrical conducting resistive material layer. The remaining doped metallic insulator layer and the electrical conducting resistive material layer are then patterned to provide the resistor structure.

The present application provides planar and stacked resistor structures that are embedded within an interconnect dielectric material in which the resistivity of an electrical conducting resistive material or electrical conducting resistive materials of the resistor structure can be tuned to a desired resistivity during the manufacturing of the resistor structure. Notably, a doped metallic insulator layer is formed atop a substrate. A controlled surface treatment process is then performed to an upper portion of the doped metallic insulator layer to convert the upper portion of the doped metallic insulator layer into an electrical conducting resistive material layer. The remaining doped metallic insulator layer and the electrical conducting resistive material layer are then patterned to provide the resistor structure.

The present invention provides an amplifier circuit, wherein the amplifier circuit includes an operational amplifier and a feedback path. The operational amplifier has an input terminal and an output terminal, and is arranged for receiving an input signal to generate an output signal. The feedback path is coupled between the input terminal and the output terminal of the operational amplifier, wherein the feedback path comprises at least two poly resistors, and a depletion region of at least one of the two poly resistors is biased by the output signal generated by the operational amplifier.

In an example 3D printing method, an electrical conductivity value for a resistor is identified. Based upon the identified electrical conductivity value, a predetermined amount of a conductive agent is selectively applied to at least a portion of a build material layer in order to introduce a predetermined volume percentage of a conductive material to the resistor. Based upon the identified electrical conductivity value and the predetermined volume percent of the conductive material, a predetermined amount of a resistive agent is selectively applied to the at least a portion of the build material layer in order to introduce a predetermined volume percentage of a resistive material to the resistor. The build material layer is exposed to electromagnetic radiation, whereby the at least the portion coalesces to form a layer of the resistor.

The present application provides planar and stacked resistor structures that are embedded within an interconnect dielectric material in which the resistivity of an electrical conducting resistive material or electrical conducting resistive materials of the resistor structure can be tuned to a desired resistivity during the manufacturing of the resistor structure. Notably, a doped metallic insulator layer is formed atop a substrate. A controlled surface treatment process is then performed to an upper portion of the doped metallic insulator layer to convert the upper portion of the doped metallic insulator layer into an electrical conducting resistive material layer. The remaining doped metallic insulator layer and the electrical conducting resistive material layer are then patterned to provide the resistor structure.

The present application provides planar and stacked resistor structures that are embedded within an interconnect dielectric material in which the resistivity of an electrical conducting resistive material or electrical conducting resistive materials of the resistor structure can be tuned to a desired resistivity during the manufacturing of the resistor structure. Notably, a doped metallic insulator layer is formed atop a substrate. A controlled surface treatment process is then performed to an upper portion of the doped metallic insulator layer to convert the upper portion of the doped metallic insulator layer into an electrical conducting resistive material layer. The remaining doped metallic insulator layer and the electrical conducting resistive material layer are then patterned to provide the resistor structure.