Nanorod devices for isolating and characterizing target cellular components are provided. Methods of isolating, detecting, and/or characterizing the components are also provided. Methods of use and treatment are further disclosed, such as treating diseases identified using the nanorods and/or using differentiated stem cells identified using the provided nanorods.

Nanorod devices for isolating and characterizing target cellular components are provided. Methods of isolating, detecting, and/or characterizing the components are also provided. Methods of use and treatment are further disclosed, such as treating diseases identified using the nanorods and/or using differentiated stem cells identified using the provided nanorods.

Devices are described that include a multi-layered structure that comprises three layers. The first layer is a magnetic Heusler compound, the second layer (acting as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably Al; or Ga or Al alloyed with Ga, Ge, Sn or combinations thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is represented by Ru.sub.1-xE.sub.x, with x being in the range from 0.45 to 0.55. An MRAM element may be constructed by forming, in turn, a substrate, the multi-layered structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).

The present invention relates to new multiferroic materials. More particularly, the present invention relates to new multiferroic single phase ceramic materials as well as to thin films formed from these materials, methods of preparing these materials and their use as multiferroic materials in electronic components and devices.

A magnetic sheet includes one or more magnetic layers formed of a metal ribbon, the metal ribbon includes fragments with metal oxide coating layers formed in spaces between the fragments.

A magnetic sheet includes one or more magnetic layers formed of a metal ribbon, the metal ribbon includes fragments with metal oxide coating layers formed in spaces between the fragments.

A structure includes an electronically controllable ferromagnetic oxide structure that includes at least three layers. The first layer comprises STO. The second layer has a thickness of at least about 3 unit cells, said thickness being in a direction substantially perpendicular to the interface between the first and second layers. The third layer is in contact with either the first layer or the second layer or both, and is capable of altering the charge carrier density at the interface between the first layer and the second layer. The interface between the first and second layers is capable of exhibiting electronically controlled ferromagnetism.

A structure includes an electronically controllable ferromagnetic oxide structure that includes at least three layers. The first layer comprises STO. The second layer has a thickness of at least about 3 unit cells, said thickness being in a direction substantially perpendicular to the interface between the first and second layers. The third layer is in contact with either the first layer or the second layer or both, and is capable of altering the charge carrier density at the interface between the first layer and the second layer. The interface between the first and second layers is capable of exhibiting electronically controlled ferromagnetism.

Disclosed is a ferromagnetic element-substituted room-temperature multiferroic material having ferromagnetism and ferroelectricity at room temperature, wherein the ferromagnetic element-substituted room-temperature multiferroic material includes a compound of chemical formula 1: <chemical formula 1> (Pb.sub.1-xM.sub.x)Fe.sub.1/2Nb.sub.1/2O.sub.3. In chemical formula 1, M represents a ferromagnetic element, and x represents a number greater than 0 and smaller than 1.

A magnetic sheet includes one or more magnetic layers formed of a metal ribbon, the metal ribbon includes fragments with metal oxide coating layers formed in spaces between the fragments.