A magnetic laminating inductor structure and process for preventing substrate bowing and damping losses generally include a laminated film stack including a magnetic layer having a tensile stress, an insulating layer having a compressive stress disposed on the magnetic layer, and a dielectric planarizing layer on the insulating layer. The dielectric planarizing layer has a neutral stress and a roughness value less than the insulating layer. The reduction in surface roughness reduces damping losses and the compressive stress of the insulating layers reduces wafer bowing.

A micromagnetic device and method of forming the same. In one embodiment, the micromagnetic device includes a seed layer formed over a substrate, and a patterned insulating layer and a patterned protective layer formed over the seed layer providing a first exposed section of the seed layer. The micromagnetic device also includes a first electroplated layer segment electroplated over the first exposed section of the seed layer and laterally over sections of the patterned insulating layer and the patterned protective layer.

A method of fabricating a semiconductor device includes aligning an alignment structure of a wafer to a direction of a magnetic field created by an external electromagnet and depositing a magnetic layer (e.g., NiFe) over the wafer in the presence of the magnetic field and while applying the magnetic field and maintaining a temperature of the wafer below 150 C. An insulation layer (e.g., AlN) is deposited on the first magnetic layer. The alignment structure of the wafer is again aligned to the direction of the magnetic field and a second magnetic layer is deposited on the insulation layer, in the presence of the magnetic field and while maintaining the temperature of the wafer below 150 C.

A permanent magnet having a periodic structure with the concentrations of Fe and T (T is one or more transition metal elements with Co or Ni as necessity) changing alternately, wherein, the concentrations change with a period of 3.3 nm or less and the concentration difference of Fe in the concentration change is 5 at % or more. The permanent magnet has a high saturation magnetization Is and coercivity HcJ and can be prepared even without rare earth element(s) R.

An inductor includes a planar laminated magnetic core and a conductive winding. The planar magnetic core includes an alternating sequence of a magnetic layer and a non-magnetic layer. The non-magnetic layer includes an insulating layer that is disposed between first and second interface layers. The conductive winding turns around in a generally spiral manner on the outside of the planar laminated magnetic core. The inductor can be integrated into a multilevel wiring network in a semiconductor integrated circuit to form a microelectronic device, such as a transformer, a power converter, or a microprocessor.

A magnetic laminating inductor structure and process for preventing substrate bowing and damping losses generally include a laminated film stack including a magnetic layer having a tensile stress, an insulating layer having a compressive stress disposed on the magnetic layer, and a dielectric planarizing layer on the insulating layer. The dielectric planarizing layer has a neutral stress and a roughness value less than the insulating layer. The reduction in surface roughness reduces damping losses and the compressive stress of the insulating layers reduces wafer bowing.

A magnetic laminating inductor structure and process for preventing substrate bowing and damping losses generally include a laminated film stack including a magnetic layer having a tensile stress, an insulating layer having a compressive stress disposed on the magnetic layer, and a dielectric planarizing layer on the insulating layer. The dielectric planarizing layer has a neutral stress and a roughness value less than the insulating layer. The reduction in surface roughness reduces damping losses and the compressive stress of the insulating layers reduces wafer bowing.

A magneto-dielectric material operable between a minimum frequency and a maximum frequency, having: a plurality of layers that alternate between a dielectric material and a ferromagnetic material, lowermost and uppermost layers of the plurality of layers each being a dielectric material; each layer of the plurality of ferromagnetic material layers having a thickness equal to or greater than 1/15.sup.th a skin depth of the respective ferromagnetic material at the maximum frequency, and equal to or less than .sup.th the skin depth of the respective ferromagnetic material at the maximum frequency; each layer of the plurality of dielectric material layers having a thickness and a dielectric constant that provides a dielectric withstand voltage across the respective thickness of equal to or greater than 150 Volts peak and equal to or less than 1,500 Volts peak; and, the plurality of layers having an overall thickness equal to or less than one wavelength of the minimum frequency in the plurality of layers.

An electronic device is provided, including: a first drive electrode; a second drive electrode that is spaced apart from the first drive electrode; and a topological insulator that contacts both of the first drive electrode and the second drive electrode and has magnetism, wherein the topological insulator includes a first region having a first coercivity and a second region having a second coercivity that is different from the first coercivity. A fabrication method of a topological insulator is also provided, including: preparing a topological insulator having magnetism and a first coercivity; and forming a second region having a second coercivity that is different from the first coercivity by irradiating a partial region of the topological insulator with ions.

Described is an apparatus which comprises: an input ferromagnet to receive a first charge current and to produce a corresponding spin current; and a stack of metal layers configured to convert the corresponding spin current to a second charge current, wherein the stack of metal layers is coupled to the input magnet.