A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by A.sub.1-xE.sub.x, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.

An apparatus is provided which comprises: a magnetic junction including: a stack of structures including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device, wherein the first structure has a first dimension along the x-y plane and a second dimension in the z-plane, wherein the second dimension is substantially greater than the first dimension. The magnetic junction includes a second structure comprising one of a dielectric or metal; and a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the third structure, wherein the interconnect comprises a spin orbit material.

The present disclosure relates to a device and method for forming skyrmion in a magnetic thin film. A skyrmion forming method comprises aligning the surface of the magnetic thin film and a horizontal magnetic field to be applied to the magnetic thin film and applying the horizontal magnetic field and a vertical magnetic field to the magnetic thin film. Accordingly, it is possible to form the bubble skyrmion easily even in the case of a wide width of a stripe formed on the magnetic thin film.

A magnetic recording array according to the present embodiment includes a plurality of spin elements, a first reference cell, and a second reference cell, wherein the plurality of spin elements, the first reference cell, and the second reference cell each have a wiring and a stacked body including a first ferromagnetic layer stacked on the wiring, wherein the electrical resistance of the wiring of the first reference cell is higher than the electrical resistance of the wiring of each spin element, and wherein the electrical resistance of the wiring of the second reference cell is lower than the electrical resistance of the wiring of each spin element.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.

According to one embodiment, an arithmetic device includes an arithmetic element part, and a controller. The arithmetic element part includes first and second elements. The first element includes a first conductive member and a first stacked body. The first conductive member includes first to third portions. The first stacked body includes a first magnetic layer, and a first counter magnetic layer. The second element includes a second conductive member and a second stacked body. The second conductive member includes fourth and fifth portions, and a sixth portion between the fourth and fifth portions. The second stacked body includes a second magnetic layer, and a second counter magnetic layer. The controller is configured to perform an XNOR operation of first and second inputs. The first input corresponds to electrical resistances of the stacked bodies. The second input corresponds to potentials of the magnetic layers.

The present invention relates to an electronic device including an input and an output, the device generating an output voltage when the input of the device is supplied, the device comprising: a conversion unit converting a spin current into a charge current having an amplitude and a sign, a spin current application unit applying a spin current to the conversion unit, a ferroelectric layer, which has a ferroelectric polarization and is arranged such that the ferroelectric polarization controls at least one among the amplitude and the sign of the charge current, and an electric field application unit suitable for applying an electric field to the ferroelectric layer to control the ferroelectric polarization.

The present disclosure relates to a device and method for forming skyrmion in a magnetic thin film. A skyrmion forming method comprises aligning the surface of the magnetic thin film and a horizontal magnetic field to be applied to the magnetic thin film and applying the horizontal magnetic field and a vertical magnetic field to the magnetic thin film. Accordingly, it is possible to form the bubble skyrmion easily even in the case of a wide width of a stripe formed on the magnetic thin film.

A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by A.sub.1-xE.sub.x, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.

A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic spacer layer between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer contains a metal compound having a half-Heusler type crystal structure, the metal compound contains a functional material, and X atoms, Y atoms, and Z atoms which form a unit lattice of the half-Heusler type crystal structure, and the functional material has an atomic number lower than an atomic number of any of the X atoms, the Y atoms, and the Z atoms.