The semiconductor structure includes a first die, a second die, a connecting portion, and a through-substrate via. The first die includes a first dielectric layer and a first helical conductor embedded therein. The second die includes a second dielectric layer and a second helical conductor embedded therein, wherein the second dielectric layer is bonded with the first dielectric layer, thereby forming an interface. The connecting portion extends from the first dielectric layer through the interface to the second dielectric layer and interconnects the first helical conductor with the second helical conductor. The through-substrate via extends from the first die to the second die through the interface, wherein the through-substrate via is surrounded by the first and the second helical conductors.

An inductor array includes a body including at least three coils and external electrodes arranged on external surfaces of the body. The at least three coils are arranged to be spaced apart from each other by a predetermined distance in one direction of the body, and here, the at least three coils have the same characteristic value. A minimum distance between mutually adjacent coils among the at least three coils is changed according to the number of turns of a coil pattern included in an area formed between the centers of cores of mutually adjacent coils.

Embodiments of the present application provides a MEMS solenoid inductor, including: a silicon substrate, a soft magnetic core, and a solenoid; wherein the soft magnetic core is wrapped inside the silicon substrate, the silicon substrate is provided with a spiral channel, the soft magnetic core passes through a center of the spiral channel, and the solenoid is disposed in the spiral channel. By disposing the soft magnetic core and the solenoid of the inductor inside the silicon substrate completely, the thickness of the silicon substrate is fully utilized, and the obtained inductor has a larger winding cross-sectional area and improved magnetic flux, which increases the inductance value of the inductor; at the same time, the silicon substrate plays a protective role on the soft magnetic core and the solenoid, the strength of the inductor is improved, and the good impact resistance is provided.

Embodiments of the present application provides a MEMS solenoid inductor, including: a silicon substrate, a soft magnetic core, and a solenoid; wherein the soft magnetic core is wrapped inside the silicon substrate, the silicon substrate is provided with a spiral channel, the soft magnetic core passes through a center of the spiral channel, and the solenoid is disposed in the spiral channel. By disposing the soft magnetic core and the solenoid of the inductor inside the silicon substrate completely, the thickness of the silicon substrate is fully utilized, and the obtained inductor has a larger winding cross-sectional area and improved magnetic flux, which increases the inductance value of the inductor; at the same time, the silicon substrate plays a protective role on the soft magnetic core and the solenoid, the strength of the inductor is improved, and the good impact resistance is provided.

A planar magnetic structure includes a closed loop structure having a plurality of core segments divided into at least two sets. A coil is formed about one or more core segments. A first antiferromagnetic layer is formed on a first set of core segments, and a second antiferromagnetic layer is formed on a second set of core segments. The first and second antiferromagnetic layers include different blocking temperatures and have an easy axis pinning a magnetic moment in two different directions, wherein when current flows through the coil, the magnetic moments rotate to form a closed magnetic loop in the closed loop structure.

A magnetic material may be fabricated with a plurality of magnetic filler particles dispersed within a carrier material, wherein at last one of the magnetic filler particles may comprise a ferromagnetic core coated with an inert material to form a shell surrounding the ferromagnetic core. Such a coating may allow for the use of ferromagnetic materials for forming embedded inductors in package substrates without the risk of being incompatible with fabrication processes used to form these package substrates.

A multilayer inductor manufacturing method includes stacking a first coil conductor layer on a first magnetic layer; stacking a first burn-away material on side surfaces of the first coil conductor layer; stacking a second magnetic layer on the first burn-away material and first magnetic layer; stacking a second burn-away material on the second magnetic layer laterally outside an upper surface of the first coil conductor layer; stacking a second coil conductor layer on the upper surface of the first coil conductor layer and second burn-away material; stacking a third burn-away material on side surfaces and an upper surface of the second coil conductor layer; stacking a third magnetic layer on side surfaces of the third burn-away material and the second magnetic layer; stacking a fourth magnetic layer on the third burn-away material and the third magnetic layer; and burning away the first, second, and third burn-away materials via firing.

A first resin layer (resin insulating layer) is formed by forming first and third covering portions in close contact with peripheral surfaces of respective end portions of first and second metal pins on the side closer to first end surfaces thereof, and by forming a body portion in a state of covering the respective surfaces of the first and third covering portions. Therefore, even when the first resin layer is thermally contracted, boundary regions of the one principal surface of the first resin layer around the respective end portions of the first and second metal pins on the side closer to the first end surfaces are filled with the first and third covering portions. Hence gaps can be prevented from being generated in those boundary regions, and a columnar conductor (first metal pin) can be avoided from deviating in position.

A region of a sealing part is effectively utilized. -A semiconductor device includes a semiconductor element, a substrate, a sealing part, and a cavity region. The substrate included in this semiconductor device is disposed adjacent to a bottom surface of the semiconductor element. The sealing part included in this semiconductor device is formed in a shape that covers an upper surface that is a surface facing the bottom surface of the semiconductor element, and seals the semiconductor element. The cavity region included in this semiconductor device is a region disposed in the sealing part and formed with a cavity.

A coil component includes: a magnetic body part and a cover part covering one side of a magnetic layer part; and a coil part embedded in the magnetic body part. The magnetic body part is comprised of the following two types of layers: (A) an oblate soft magnetic grain-containing layer, and (B) a spherical grain-containing layer, wherein layer (A) extends over the entire range of the magnetic body part except for a portion including the coil part in a direction perpendicular to an axis direction of the coil part, layer (B) adjoins layer (A) in the axis direction. The cover part is constituted by multiple layers including one or more of layer(s) (A) and one or more of layer(s) (B) and extending over the entire range of the magnetic body part in the direction perpendicular to the axis direction.