A semiconductor device includes a method of manufacturing a semiconductor device. The method includes forming an interconnect structure. In some embodiments, the forming of the interconnect structure includes forming a first patterned layer over a substrate, attaching a die attach film (DAF) to a permalloy device and transporting the permalloy device to the first patterned layer through a pick and place operation, forming a second patterned layer in the same tier as the permalloy device, and bonding a semiconductor die to the interconnect structure. In some embodiments, the second patterned layer is aligned with the first patterned layer, forming a third patterned layer over the second patterned layer and the permalloy device. In some embodiments, the first patterned layer, the second patterned layer and the third patterned layer collectively form a coil winding around the permalloy device.

A coil electrode 4 provided in a coil component 1a includes a plurality of inner metal pins 5a arranged on an inner peripheral side of a coil core 3, a plurality of outer metal pins 5b arranged on an outer peripheral side of the coil core 3 to form a plurality of pairs with the inner metal pins 5a, a plurality of lower wiring patterns 7 that connect lower ends of the inner metal pins 5a and the outer metal pins 5b in the pairs, and a plurality of upper wiring patterns 6 that connect upper ends of the outer metal pins 5b to upper ends of inner metal pins 5a adjacent to the inner metal pins 5a that form the pairs with the outer metal pins 5b.

Disclosed herein is a coil component that includes a substrate having a first surface and a first spiral coil spirally wound in a plurality of turns formed on the first surface of the substrate. Each of the turns has a first circumference region in which a radial position is substantially fixed and a first shift region in which a radial position is shifted. Each of inner and outer peripheral ends of the first spiral coil is positioned at the first shift region.

An embedded coil assembly embodiment includes a ferrite ring having an annular axis. The ferrite ring is positioned on a conductive metal surface. A plurality of separate, spaced apart conductive structures extend over the ferrite ring and are attached to the conductive metal surface in a first region of the conductive surface positioned radially outwardly of the annular axis of the ferrite ring and in a second region of the conductive surface positioned radially inwardly of the annular axis of the ferrite ring. An encapsulation layer covers, the ferrite ring and at least a portion of the plurality of conductive structures.

A coil component includes an insulating layer in which coil conductors are embedded, and a magnetic member disposed on one surface of the insulating layer and having a magnetic core protruding therefrom. The magnetic core is inserted into the insulating layer and has a width which is increased toward a lower portion thereof.

An electronic component including a body portion and an electrode disposed on the body portion is provided. The electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer contains silver (Ag) as a main component and includes first dispersion portions containing glass as a main component and second dispersion portions containing nickel as a main component. The second metal layer is disposed on the first metal layer and contains nickel (Ni) as a main component. The third metal layer is disposed on the second metal layer and contains tin (Sn) as a main component. An area of the first dispersion portions is larger than an area of the second dispersion portions in a sectional view of the electrode.

A coil-included terminal block allowing for a noise suppression effect. The coil-included terminal block includes: a terminal attachment member to which at least three terminal pairs are attached, each of the terminal pairs including a terminal and another terminal; and a plurality of coils configured to connect the terminals of the at least three terminal pairs to the respective other terminals of the at least three terminal pairs.

An integrated passive device and assemblies containing the same are disclosed. The integrated passive device can include a thin-film magnetic inductor. Various configurations of electrically connecting an integrated passive device to a processor and/or an interposer such as a chip-scale package are also disclosed. An inductor on an integrated passive device can configured and arranged such that it is magnetically coupled to an inductor on a structure such as a processor chip or a system on a chip.

A magnetic core for an inductive component is produced by thin-film technology, wherein the magnetic core consists of at least two different magnetic materials.

A laminated coil component that can use inexpensive copper as an internal conductor, and has excellent direct current superimposition characteristics is provided. In a laminated coil component including: a magnetic section including a ferrite material; a non-magnetic section including a non-magnetic ferrite material; and a coiled conductor section containing copper as a main component embedded inside the magnetic section and the non-magnetic section, the non-magnetic section contains at least Fe, Mn and Zn, and optionally Cu. The non-magnetic section has a Fe content of 40.0 mol % to 48.5 mol % in terms of Fe.sub.2O.sub.3, a Mn content of 0.5 mol % to 9 mol % in terms of Mn.sub.2O.sub.3 and a Cu content of 8 mol % or less in terms of CuO.