An integrated device comprising a die substrate; and a die interconnection portion coupled to the die substrate. The die interconnection comprises a first inductor and a second inductor. The first inductor comprises a first spiral comprising a first origin and a first tail and a second spiral comprising a second origin and a second tail.

A high performance, on-chip a parallel stacked inductor which achieves a higher Q value. The inductor is formed on a layered substrate with a top metal layer having spiral winding conductive segments that terminate at an overpass junction, and a bottom metal layer traversing adjacent to, and parallel with, the top metal layer. The bottom metal layer having multiple bar vias imbedded therein for current carrying capabilities. The overpass junction having a width that is greater than the width of the adjacent spiral winding conductive segments.

An inductor device includes a first coil, a second coil and a toroidal coil. The first coil is partially overlapped with the second coil in a vertical direction. The toroidal coil is disposed outside the first coil and the second coil. The first coil is interlaced with the second coil at a first side and a second side of the inductor device.

A semiconductor element fabricated in a semiconductor structure and coupled to an application circuit through at least two connecting terminals. The semiconductor element includes a first spiral coil, a second spiral coil and a connecting portion. The first spiral coil is substantially located in a first metal layer and formed with a first end and a second end. The second spiral coil is substantially located in the first metal layer and formed with a third end and a fourth end. The connecting portion, which is located in a second metal layer, connects the second end and the fourth end. The first end is used as one of the two connecting terminals and the third end is used as the other of the two connecting terminals. The second metal layer is different from the first metal layer.

A semiconductor element includes a first spiral coil, a second spiral coil, a connecting section, a first guide segment, and a second guide segment. The first spiral coil is formed with a first end and a second end, and includes a first inner turn and a first outer turn. The first inner turn is located in a range surrounded by the outer turn, and the first end and the second end are located at the first inner turn. The second spiral coil and the first spiral coil are located in substantially a same metal layer. The connecting section connects the first spiral coil and the second spiral coil. The first guide segment is connected to the first end. The second guide segment is connected to the second end. The first guide segment and the second guide segment are fabricated in a metal layer different from a metal layer of the first spiral coil.

A semiconductor element includes a first coil substantially located at a first plane; a second coil substantially located at the first plane; a connecting section that connects the first coil and the second coil; a third coil substantially located at a second plane different from the first plane; and a fourth coil substantially located at the second plane. The third coil and the first coil are connected through a through structure, and the fourth coil and the second coil are connected through a through structure. The third coil and the fourth are not directly connected.

An 8-shaped integrated inductor includes a first terminal; a second terminal; a third terminal; a bridging structure that includes a first metal segment and a second metal segment, the first metal segment and the second metal segment being disposed in different layers of a semiconductor structure and partially overlapping; a first sensing unit employing the first terminal and the third terminal as its two terminals and including the first metal segment; and a second sensing unit employing the second terminal and the third terminal as its two terminals and including the second metal segment and a third metal segment. The third metal segment is disposed at a metal layer different from the second metal segment and conductively connecting other metal segments of the second sensing unit without crossing the metal segments of the first sensing unit.

Aspects of the disclosure provide a device that includes a first inductor. The first inductor includes a first coil portion having more than one turn that defines a first enclosed area and a second coil portion having more than one turn that defines a second enclosed area. The first coil portion and the second coil portion are arranged to generate magnetic fields having substantially equal strength and opposite directions.

The present disclosure relates to semiconductor structures and, more particularly, to patterned magnetic shields for inductors and methods of manufacture. The structure includes: an inductor structure formed over a wafer; and a patterned magnetic material formed on a plane above, below or above and below the wafer and at a distance away from the inductor structure so as to not decrease inductance of the inductor structure.

High Q-factor inductor structures and RF integrated circuits including the same are provided. The inductor structure includes an inductor line disposed over an insulation layer, an upper metal line disposed over the insulation layer and spaced apart from the inductor line by a predetermined distance, first and second lower metal lines each disposed in the insulation layer and located at different levels from each other in a vertical direction, a lower via coupling the first lower metal line to the second lower metal line, a first upper via coupling the second lower metal line to the inductor line, and a second upper via coupling the second lower metal line to the upper metal line.